MJD42C.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 MJD42C 데이타시트 다운로드

No Preview Available !

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJD41C/D
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP41 and TIP42 Series
Monolithic Construction With Built–in Base–Emitter Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current— Continuous
Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation* @ TA = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient*
Symbol
VCEO
VCB
VEB
IC
IB
PD
PD
TJ, Tstg
MJD41C
MJD42C
100
100
5
6
10
2
20
0.16
1.75
0.014
– 65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
Watts
W/_C
_C
Symbol
RθJC
RθJA
Max Unit
6.25 _C/W
71.4 _C/W
* These ratings are applicable when surface mounted on the minimum pad size recommended.
NPN
MJD41C*
PNP
MJD42C*
*Motorola Preferred Device
SILICON
POWER TRANSISTORS
6 AMPERES
100 VOLTS
20 WATTS
CASE 369A–13
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
inches
mm
1

No Preview Available !

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎM(EOODÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1JYCCCEDCBCSL)FNNFmamEoooCouDP((((((((((CsÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎllllrIIIIIVVVIIAClllilaCuCCCCCCCr4eeeteCeHeCCBtlMlHTcccecl–suAn–1=======EEEttttrEeIRArooootSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRCrCC6650303m=rrrrG==eTRiIA––g0.0.CeuCCCnAA53AiaA5EEn61t0CstMttmAHuuidddoa00ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎeAACmmntVGTm:ttcccfl0ArALoofddTJVdEii—,,,PaCttAOffCdccRVEttcffIVdVRiCuDeeuB,,ndcÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ,nuACCcdRCClBrrIr,VVcsHIr,Sc4r=CCuuIVSSarEE,IeeCCSI,BeTArrBonVT2uan6rrVEETW=n==IÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎldeeREsC=ttC0tCE=tIuawnntC0==G044iRESaAdr0Bgtt0)aiSiaItd)14mVVenC)Sh=ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(t=it0i1ddinohVATnTv1)cc0nVgCdIdP0E))C)dccÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVhVr3RVS))cooao0,ddIlrl0tStfcuaaaÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ,=µTccggftsteIet1eCe,(2r(sDkÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSi1)tHsu)=tzt(iyTc)1ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCCMy=cHÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎl2ez5)v_CÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2u%nÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.lessÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎotheÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎrwisÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎe noÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎted)VÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVVCSCBIIIEyChEChEmEOfFBEÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎETf((eE(bsOoOSsaonutl)s)ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎM1ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ312—————30i050n0 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎM01517ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ———2..a00555x ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎmµµMUVVVAA——AndddHdddÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎccciztccc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(2) fT = hfe• ftest.
2 Motorola Bipolar Power Transistor Device Data

No Preview Available !

TA TC
2.5 25
TYPICAL CHARACTERISTICS
MJD41C MJD42C
VCC
+ 30 V
2 20
1.5 15
TC
1 10 TA SURFACE MOUNT
0.5 5
00
25
50 75 100 125
T, TEMPERATURE (°C)
Figure 1. Power Derating
+11 V
0
25 µs
–9 V
RB
51
RC
SCOPE
D1
tr, tf 10 ns
DUTY CYCLE = 1%
–4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
MSB5300 USED ABOVE IB 100 mA
150 MSD6100 USED BELOW IB 100 mA
REVERSE ALL POLARITIES FOR PNP.
Figure 2. Switching Time Test Circuit
500
300
200 TJ = 150°C
100
70
25°C
50
30
20 – 55°C
VCE = 2 V
10
7
5
0.06
0.1
0.2 0.3 0.4 0.6 1
2
IC, COLLECTOR CURRENT (AMP)
Figure 3. DC Current Gain
46
2
TJ = 25°C
1.6
1.2
0.8 VCE(sat) @ IC/IB = 10
VBE @ VCE = 4 V
0.4
VBE(sat) @ IC/IB = 10
0
0.06 0.1
0.2 0.3 0.4 0.6
1
2 34
IC, COLLECTOR CURRENT (AMP)
Figure 5. “On” Voltages
6
2
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.06 0.1
5
3
2
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.06
0.1
TJ = 25°C
VCC = 30 V
IC/IB = 10
tr
td @ VBE(off) 5 V
0.2 0.4 0.6 1
2
IC, COLLECTOR CURRENT (AMP)
Figure 4. Turn–On Time
46
TJ = 25°C
VCC = 30 V
IC/IB = 10
ts IB1 = IB2
tf
0.2 0.4 0.6 1
2
IC, COLLECTOR CURRENT (AMP)
Figure 6. Turn–Off Time
46
Motorola Bipolar Power Transistor Device Data
3

No Preview Available !

MJD41C MJD42C
2
1.6
IC = 1 A
1.2
2.5 A
TJ = 25°C
5A
0.8
0.4
0
10 20 30 50 100 200 300 500 1000
IB, BASE CURRENT (mA)
Figure 7. Collector Saturation Region
300
200
100
70
50
30
0.5
TJ = 25°C
Cib
Cob
1 2 3 5 10 20 30 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
1
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1 0.05
0.07
0.05 0.02
0.03 0.01
0.02 SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1
RθJC(t) = r(t) RθJC
RθJC = 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3 0.5 1
2 3 5 10 20 30 50
t, TIME (ms)
Figure 9. Thermal Response
100 200 300 500 1000
10
500 µs
100 µs
5
3
2
dc
1 ms
5 ms
1
0.5 WIRE BOND LIMIT
0.3 THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.1 CURVES APPLY BELOW RATED VCEO
0.05
0.03
TC = 25°C SINGLE PULSE
TJ = 150°C
MJD41C, 42C
0.01
1
2 3 5 7 10
20 30 50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 10. Maximum Forward Bias
Safe Operating Area
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 10 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
vlimits are valid for duty cycles to 10% provided TJ(pk)
150_C. TJ(pk) may be calculated from the data in Fig-
ure 9. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
4 Motorola Bipolar Power Transistor Device Data

No Preview Available !

PACKAGE DIMENSIONS
MJD41C MJD42C
B
VR
–T–
SEATING
PLANE
C
E
S
F
4
1 23
A
K
J
LH
D 2 PL
G 0.13 (0.005) M T
U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A 0.235 0.250 5.97 6.35
B 0.250 0.265 6.35 6.73
C 0.086 0.094 2.19 2.38
Z D 0.027 0.035 0.69 0.88
E 0.033 0.040 0.84 1.01
F 0.037 0.047 0.94 1.19
G 0.180 BSC
4.58 BSC
H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.102 0.114 2.60 2.89
L 0.090 BSC
2.29 BSC
R 0.175 0.215 4.45 5.46
S 0.020 0.050 0.51 1.27
U 0.020 ––– 0.51 –––
V 0.030 0.050 0.77 1.27
Z 0.138 ––– 3.51 –––
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 369A–13
ISSUE W
B
VR
–T–
SEATING
PLANE
S
4
123
A
K
C
E
F
G
J
D 3 PL
0.13 (0.005) M T
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.235 0.250
B 0.250 0.265
C 0.086 0.094
D 0.027 0.035
E 0.033 0.040
F 0.037 0.047
G 0.090 BSC
H 0.034 0.040
J 0.018 0.023
K 0.350 0.380
R 0.175 0.215
S 0.050 0.090
V 0.030 0.050
MILLIMETERS
MIN MAX
5.97 6.35
6.35 6.73
2.19 2.38
0.69 0.88
0.84 1.01
0.94 1.19
2.29 BSC
0.87 1.01
0.46 0.58
8.89 9.65
4.45 5.46
1.27 2.28
0.77 1.27
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 369–07
ISSUE K
Motorola Bipolar Power Transistor Device Data
5