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MJH11017, MJH11019,
MJH11021 (PNP)
MJH11018, MJH11020,
MJH11022 (NPN)
Complementary Darlington
Silicon Power Transistors
These devices are designed for use as general purpose amplifiers,
low frequency switching and motor control applications.
Features
High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)
Collector−Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) — MJH11018, 17
= 200 Vdc (Min) — MJH11020, 19
= 250 Vdc (Min) — MJH11022, 21
Low Collector−Emitter Saturation Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A
= 1.8 V (Typ) @ IC = 10 A
Monolithic Construction
These are Pb−Free Devices
MAXIMUM RATINGS
Rating
Symbol
Collector−Emitter Voltage
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
VCEO
Max
150
200
250
Unit
Vdc
Collector−Base Voltage
MJH11018, MJH11017
MJH11020, MJH11019
MJH11022, MJH11021
VCB
Vdc
150
200
250
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
VEB 5.0 Vdc
IC 15 Adc
30
Base Current
Total Device Dissipation @ TC = 25_C
Derate above 25_C
IB 0.5 Adc
PD 150 W
1.2 W/_C
Operating and Storage Junction Temperature TJ, Tstg 65 to
Range
+150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Case
RqJC
0.83 _C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.
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15 AMPERE DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
150−250 VOLTS, 150 WATTS
NPN
COLLECTOR 2
PNP
COLLECTOR 2
BASE
1
BASE
1
EMITTER 3
MJH11018
MJH11020
MJH11022
EMITTER 3
MJH11017
MJH11019
MJH11021
1
2
3
SOT−93
(TO−218)
CASE 340D
STYLE 1
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 10
1
Publication Order Number:
MJH11017/D

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MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
MARKING DIAGRAMS
TO−247
TO−218
MJH110xx
AYWWG
AYWWG
MJH110xx
1 BASE
3 EMITTER
2 COLLECTOR
1 BASE
3 EMITTER
2 COLLECTOR
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MJH110xx = Device Code
xx = 17, 19, 21, 18, 20, 22
ORDERING INFORMATION
Device Order Number
MJH11017G
MJH11018G
MJH11019G
MJH11020G
MJH11021G
MJH11022G
MJH11017G
MJH11018G
MJH11019G
MJH11020G
MJH11021G
MJH11022G
Package Type
TO−218
(Pb−Free)
TO−218
(Pb−Free)
TO−218
(Pb−Free)
TO−218
(Pb−Free)
TO−218
(Pb−Free)
TO−218
(Pb−Free)
TO−247
(Pb−Free)
TO−247
(Pb−Free)
TO−247
(Pb−Free)
TO−247
(Pb−Free)
TO−247
(Pb−Free)
TO−247
(Pb−Free)
Shipping
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
30 Units / Rail
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MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
160
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Sustaining Voltage (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 0.1 Adc, IB = 0)
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 75 Vdc, IB = 0)
(VCE = 100 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 125 Vdc, IB = 0)
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 5.0 Vdc IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 5.0 Vdc)
(IC = 15 Adc, VCE = 5.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Saturation Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, IB = 100 mA)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 15 Adc, IB = 150 mA)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter On Voltage (IC = 10 A, VCE = 5.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent−Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJH11018, MJH11020, MJH11022
MJH11017, MJH11019, MJH11021
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall−Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSWITCHING CHARACTERISTICS
Symbol
VCEO(sus)
ICEO
ICEV
IEBO
hFE
VCE(sat)
VBE(on)
VBE(sat)
fT
Cob
hfe
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDelay Time
Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRise Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStorage Time
(VCC = 100 V, IC = 10 A, IB = 100 mA
VBE(off) = 5.0 V) (See Figure 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFall Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
Symbol
td
tr
ts
tf
Min Max
Unit
150 −
200 −
250 −
Vdc
mAdc
− 1.0
− 1.0
− 1.0
mAdc
− 0.5
− 5.0
− 2.0 mAdc
400 15,000
100 −
− 2.5
− 4.0
− 2.8
− 3.8
Vdc
Vdc
Vdc
3.0 −
− 400
− 600
75 −
pF
Typical
NPN
150
PNP
75
1.2 0.5
4.4 2.7
2.5 2.5
Unit
ns
ms
ms
ms
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MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
VCC
-100 V
RC
TUT
SCOPE
RB & RC varied to obtain desired current levels
D1, must be fast recovery types, e.g.:
1N5825 used above IB 100 mA
MSD6100 used below IB 100 mA
V2
APPROX
+12 V
0
RB
51 D1
V1
APPROX
- 8.0 V
25 ms
+ 4.0 V
tr, tf 10 ns
Duty Cycle = 1.0%
For td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit, reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1 0.05
0.07 0.02
0.05
0.03 0.01
0.02 SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1
RqJC(t) = r(t) RqJC
RqJC = 0.83°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
t, TIME (ms)
20 30 50
Figure 3. Thermal Response
100 200 300 500 1000
TC = 25°C SINGLE PULSE
30
20
0.1 ms
10 0.5 ms
5.0 1.0 ms
5.0 ms
2.0 dc
WIRE BOND LIMIT
1.0 THERMAL LIMIT
0.5 SECOND BREAKDOWN LIMIT
MJH11017, MJH11018
0.2 MJH11019, MJH11020
MJH11021, MJH11022
0
2.0 3.0 5.0 10 20 30 50 100 150 250
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Rated Forward Bias
Safe Operating Area (FBSOA)
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
30
L = 200 mH
IC/IB1 50
20 TC = 100°C
VBE(off) = 0 - 5.0 V
RBE = 47 W
DUTY CYCLE = 10%
10
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
0
0 20
60 100 140 180 220 260
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum Rated Reverse Bias
Safe Operating Area (RBSOA)
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 5 gives RBSOA characteristics.
10,000
7000
5000
3000
2000
1000
VCE = 5.0 V
TC = 150°C
25°C
PNP
10,000
5000
VCE = 5.0 V
2000
1000
NPN
TC = 150°C
25°C
500
200 - 55°C
500
- 55°C
200
100
0.2 0.3
0.5 0.7 1.0
3.0 5.0
IC, COLLECTOR CURRENT (AMPS)
10 15
100
0.2 0.3
Figure 6. DC Current Gain
0.5 0.7 1.0
3.0 5.0 7.0 10 15
IC, COLLECTOR CURRENT (AMPS)
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