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M93C86, M93C76, M93C66
M93C56, M93C46, M93C06
16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit (8-bit or 16-bit wide)
MICROWIRE Serial Access EEPROM
FEATURES SUMMARY
s Industry Standard MICROWIRE Bus
s Single Supply Voltage:
– 4.5V to 5.5V for M93Cx6
– 2.5V to 5.5V for M93Cx6-W
– 1.8V to 5.5V for M93Cx6-R
s Dual Organization: by Word (x16) or Byte (x8)
s Programming Instructions that work on: Byte,
Word or Entire Memory
s Self-timed Programming Cycle with Auto-Erase
s Ready/Busy Signal During Programming
s Speed:
– 1MHz Clock Rate, 10ms Write Time (Current
product, identified by process identification
letter F or M)
– 2MHz Clock Rate, 5ms Write Time (New
Product, identified by process identification
letter W)
s Sequential Read Operation
s Enhanced ESD/Latch-Up Behaviour
s More than 1 Million Erase/Write Cycles
s More than 40 Year Data Retention
Figure 1. Packages
8
1
PDIP8 (BN)
8
1
SO8 (MN)
150 mil width
TSSOP8 (DS)
3x3mm body size
TSSOP8 (DW)
169 mil width
M93C06 IS “NOT FOR NEW DESIGN”
The M93C06 is still in production, but is not recom-
mended for new designs. Please refer to AN1571
on how to replace the M93C06 by the M93C46 in
your application.
May 2003
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M93C86, M93C76, M93C66, M93C56, M93C46, M93C06
SUMMARY DESCRIPTION
These electrically erasable programmable memo-
ry (EEPROM) devices are accessed through a Se-
rial Data Input (D) and Serial Data Output (Q)
using the MICROWIRE bus protocol.
Figure 2. Logic Diagram
D
C
S
ORG
VCC
M93Cx6
VSS
Q
AI01928
Table 1. Signal Names
S Chip Select Input
D Serial Data Input
Q Serial Data Output
C Serial Clock
ORG
Organisation Select
VCC Supply Voltage
VSS Ground
The memory array organization may be divided
into either bytes (x8) or words (x16) which may be
selected by a signal applied on Organization Se-
lect (ORG). The bit, byte and word sizes of the
memories are as shown in Table 2.
Table 2. Memory Size versus Organization
Device
Number
of Bits
Number
of 8-bit
Bytes
Number
of 16-bit
Words
M93C86
16384
2048
1024
M93C76
8192
1024
512
M93C66
4096
512
256
M93C56
2048
256
128
M93C46
1024
128
64
M93C061
256
32
16
Note: 1. Not for New Design
The M93Cx6 is accessed by a set of instructions,
as summarized in Table 3, and in more detail in
Table 4 to Table 6).
Table 3. Instruction Set for the M93Cx6
Instruction
Description
Data
READ
Read Data from Memory Byte or Word
WRITE
Write Data to Memory Byte or Word
EWEN
Erase/Write Enable
EWDS
Erase/Write Disable
ERASE
Erase Byte or Word
Byte or Word
ERAL
Erase All Memory
WRAL
Write All Memory
with same Data
A Read Data from Memory (READ) instruction
loads the address of the first byte or word to be
read in an internal address register. The data at
this address is then clocked out serially. The ad-
dress register is automatically incremented after
the data is output and, if Chip Select Input (S) is
held High, the M93Cx6 can output a sequential
stream of data bytes or words. In this way, the
memory can be read as a data stream from eight
to 16384 bits long (in the case of the M93C86), or
continuously (the address counter automatically
rolls over to 00h when the highest address is
reached).
Programming is internally self-timed (the external
clock signal on Serial Clock (C) may be stopped or
left running after the start of a Write cycle) and
does not require an Erase cycle prior to the Write
instruction. The Write instruction writes 8 or 16 bits
at a time into one of the byte or word locations of
the M93Cx6. After the start of the programming cy-
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M93C86, M93C76, M93C66, M93C56, M93C46, M93C06
cle, a Busy/Ready signal is available on Serial
Data Output (Q) when Chip Select Input (S) is driv-
en High.
An internal Power-on Data Protection mechanism
in the M93Cx6 inhibits the device when the supply
is too low.
Figure 3. DIP, SO and TSSOP Connections
M93Cx6
S1
C2
8 VCC
7 DU
D3
6 ORG
Q4
5 VSS
AI01929B
Note: 1. See page 21 (onwards) for package dimensions, and how
to identify pin-1.
2. DU = Don’t Use.
Figure 4. 90° Turned-SO Connections
M93Cx6
DU
VCC
S
C
1
2
3
4
8 ORG
7 VSS
6Q
5D
AI00900B
Note: 1. See page 24 for package dimensions, and how to identify
pin-1.
2. DU = Don’t Use.
The DU (Don’t Use) pin does not contribute to the
normal operation of the device. It is reserved for
use by STMicroelectronics during test sequences.
The pin may be left unconnected or may be con-
nected to VCC or VSS. Direct connection of DU to
VSS is recommended for the lowest stand-by pow-
er consumption.
MEMORY ORGANIZATION
The M93Cx6 memory is organized either as bytes
(x8) or as words (x16). If Organization Select
(ORG) is left unconnected (or connected to VCC)
the x16 organization is selected; when Organiza-
tion Select (ORG) is connected to Ground (VSS)
the x8 organization is selected. When the M93Cx6
is in stand-by mode, Organization Select (ORG)
should be set either to VSS or VCC for minimum
power consumption. Any voltage between VSS
and VCC applied to Organization Select (ORG)
may increase the stand-by current.
POWER-ON DATA PROTECTION
To prevent data corruption and inadvertent write
operations during power-up, a Power-On Reset
(POR) circuit resets all internal programming cir-
cuitry, and sets the device in the Write Disable
mode.
– At Power-up and Power-down, the device must
not be selected (that is, Chip Select Input (S)
must be driven Low) until the supply voltage
reaches the operating value VCC specified in
Table 8 to Table 10.
– When VCC reaches its valid level, the device is
properly reset (in the Write Disable mode) and
is ready to decode and execute incoming in-
structions.
For the M93Cx6 devices (5V range) the POR
threshold voltage is around 3V. For the M93Cx6-
W (3V range) and M93Cx6-R (2V range) the POR
threshold voltage is around 1.5V.
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