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Not recommended for new designs –
Please use 93LC76C or 93LC86C.
93C76/86
8K/16K 5.0V Microwire Serial EEPROM
Features:
• Single 5.0V supply
• Low-power CMOS technology
- 1 mA active current typical
• ORG pin selectable memory configuration
1024 x 8- or 512 x 16-bit organization (93C76)
2048 x 8- or 1024 x 16-bit organization (93C86)
• Self-timed erase and write cycles
(including auto-erase)
• Automatic ERAL before WRAL
• Power on/off data protection circuitry
• Industry standard 3-wire serial I/O
• Device status signal during erase/write cycles
• Sequential read function
• 1,000,000 erase/write cycles ensured
• Data retention > 200 years
• 8-pin PDIP/SOIC package
• Temperature ranges supported
- Commercial (C):
- Industrial (I):
- Automotive (E)
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
Description:
The Microchip Technology Inc. 93C76/86 are 8K and
16K low voltage serial Electrically Erasable PROMs.
The device memory is configured as x8 or x16 bits
depending on the ORG pin setup. Advanced CMOS
technology makes these devices ideal for low power
nonvolatile memory applications. These devices also
have a Program Enable (PE) pin to allow the user to
write protect the entire contents of the memory array.
The 93C76/86 is available in standard 8-pin PDIP and
8-pin surface mount SOIC packages.
Package Types
PDIP Package
CS 1
CLK 2
DI 3
DO 4
SOIC Package
CS 1
CLK 2
DI 3
DO 4
8 VCC
7 PE
6 ORG
5 VSS
8 VCC
7 PE
6 ORG
5 VSS
Block Diagram
VCC VSS
Memory
Array
Data
Register
DI
Mode
PE Decode
CS Logic
Address
Decoder
Address
Counter
Output
Buffer
DO
CLK
Clock
Generator
1996-2012 Microchip Technology Inc.
DS21132F-page 1

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93C76/86
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings(†)
VCC.............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. VSS ........................................................................................................ -0.6V to Vcc + 1.0V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied ................................................................................................-40°C to +125°C
Soldering temperature of leads (10 seconds) .......................................................................................................+300°C
ESD protection on all pins ..........................................................................................................................................4 kV
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
1.1 AC Test Conditions
AC Waveform:
VLO = 2.0V
VHI = Vcc - 0.2V
VHI = 4.0V for
(Note 1)
(Note 2)
Timing Measurement Reference Level
Input
0.5 VCC
Output
0.5 VCC
Note 1: For VCC 4.0V
2: For VCC > 4.0V
DS21132F-page 2
1996-2012 Microchip Technology Inc.

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93C76/86
TABLE 1-1: DC CHARACTERISTICS
DC CHARACTERISTICS
Parameter
Applicable over recommended operating ranges shown below unless otherwise noted:
VCC = +4.5V to +5.5V
Commercial (C): TA = 0°C to -40°C
Industrial
(I): TA = -40°C to +85°C
Automotive (E): TA = -40C to +125C
Symbol
Min.
Max.
Units
Conditions
High-level input voltage
Low-level input voltage
Low-level output voltage
High-level output voltage
Input leakage current
Output leakage current
Pin capacitance
(all inputs/outputs)
Operating current
Standby current
VIH1
VIL1
VOL1
VOL2
VOH1
VOH2
ILI
ILO
CINT
ICC write
ICC read
ICCS
2.0
-0.3
2.4
VCC-0.2
-10
-10
VCC +1
0.8
0.4
0.2
10
10
7
3
1.5
100
V
V
V
V
V
V
A
A
pF
mA
mA
A
Note 1: This parameter is periodically sampled and not 100% tested.
IOL = 2.1 mA; VCC = 4.5V
IOL =100 A; VCC = 4.5V
IOH = -400 A; VCC = 4.5V
IOH = -100 A; VCC = 4.5V.
VIN = 0.1V to VCC
VOUT = 0.1V to VCC
(Note 1)
TA = +25°C, FCLK = 1 MHz
FCLK = 2 MHz; VCC = 5.5V
FCLK = 2 MHz; VCC = 5.5V
CLK = CS = 0V; VCC = 5.5V
DI = PE = VSS
ORG = VSS or VCC
TABLE 1-2: AC CHARACTERISTICS
AC CHARACTERISTICS
Applicable over recommended operating ranges shown below unless otherwise noted:
VCC = +4.5V to +5.5V
Commercial (C): TA = 0°C to -40°C
Industrial (I): TA = -40°C to +85°C
Automotive (E): TA = -40C to +125C
Parameter
Symbol
Min.
Max.
Units
Conditions
Clock frequency
FCLK
— 2 MHz Vcc 4.5V
Clock high time
TCKH
300 — ns
Clock low time
TCKL
200 — ns
Chip select setup time
TCSS
50 — ns Relative to CLK
Chip select hold time
TCSH
0 — ns
Chip select low time
TCSL
250 — ns Relative to CLK
Data input setup time
TDIS
100 — ns Relative to CLK
Data input hold time
TDIH
100 — ns Relative to CLK
Data output delay time
TPD
— 400 ns CL = 100 pF
Data output disable time TCZ
— 100 ns (Note 1)
Status valid time
Program cycle time
TSV
TWC
— 500 ns CL = 100 pF
— 10 ms Erase/Write mode (Note 2)
TEC — 15 ms ERAL mode
TWL — 30 ms WRAL mode
Endurance
— 1M — cycles 25°C, VCC = 5.0V, Block mode
(Note 3)
Note 1: This parameter is periodically sampled and not 100% tested.
2: Typical program cycle is 4 ms per word.
3: This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total EnduranceModel which can be obtained from Microchip’s web site
at www.microchip.com.
1996-2012 Microchip Technology Inc.
DS21132F-page 3

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93C76/86
TABLE 1-3:
Instruction
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
INSTRUCTION SET FOR 93C76: ORG=1 (X16 ORGANIZATION)
SB Opcode
Address
Data In Data Out
1 10 X A8 A7 A6 A5 A4 A3 A2 A1 A0
— D15 - D0
1 00 1 1 X X X X X X X X
— High-Z
1 11 X A8 A7 A6 A5 A4 A3 A2 A1 A0
— (RDY/BSY)
1 00 1 0 X X X X X X X X
— (RDY/BSY)
1
01 X A8 A7 A6 A5 A4 A3 A2 A1 A0
D15 - D0 (RDY/BSY)
1 00 0 1 X X X X X X X X D15 - D0 (RDY/BSY)
1 00 0 0 X X X X X X X X
— High-Z
Req. CLK Cycles
29
13
13
13
29
29
13
TABLE 1-4: INSTRUCTION SET FOR 93C76: ORG=0 (X8 ORGANIZATION)
Instruction SB Opcode
Address
Data In Data Out
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
1 10 X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 — D7 - D0
1 00 1 1 X X X X X X X X X — High-Z
1 11 X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY)
1 00 1 0 X X X X X X X X X
— (RDY/BSY)
1 01 X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 - D0 (RDY/BSY)
1
00 0 1 X X X X X X X X X
D7 - D0 (RDY/BSY)
1 00 0 0 X X X X X X X X X — High-Z
Req. CLK
Cycles
22
14
14
14
22
22
14
TABLE 1-5:
Instruction
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
INSTRUCTION SET FOR 93C86: ORG=1 (X16 ORGANIZATION)
SB Opcode
Address
Data In Data Out
1 10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
— D15 - D0
1 00 1 1 X X X X X X X X
— High-Z
1 11 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
— (RDY/BSY)
1 00 1 0 X X X X X X X X
— (RDY/BSY)
1 01 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 D15 - D0 (RDY/BSY)
1 00 0 1 X X X X X X X X D15 - D0 (RDY/BSY)
1 00 0 0 X X X X X X X X
— High-Z
Req. CLK Cycles
29
13
13
13
29
29
13
TABLE 1-6:
Instruction
READ
EWEN
ERASE
ERAL
WRITE
WRAL
EWDS
INSTRUCTION SET FOR 93C86: ORG=0 (X8 ORGANIZATION)
SB Opcode
Address
Data In Data Out Req. CLK Cycles
1
10 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
D7 - D0
1 00 1 1 X X X X X X X X X
— High-Z
1 11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY)
1 00 1 0 X X X X X X X X X
— (RDY/BSY)
1 01 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 - D0 (RDY/BSY)
1
00 0 1 X X X X X X X X X
D7 - D0 (RDY/BSY)
1 00 0 0 X X X X X X X X X
— High-Z
22
14
14
14
22
22
14
DS21132F-page 4
1996-2012 Microchip Technology Inc.

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2.0 PRINCIPLES OF OPERATION
When the ORG pin is connected to VCC, the x16 orga-
nization is selected. When it is connected to ground,
the x8 organization is selected. Instructions, addresses
and write data are clocked into the DI pin on the rising
edge of the clock (CLK). The DO pin is normally held in
a high-Z state except when reading data from the
device, or when checking the Ready/Busy status
during a programming operation. The Ready/Busy
status can be verified during an erase/write operation
by polling the DO pin; DO low indicates that program-
ming is still in progress, while DO high indicates the
device is ready. The DO will enter the high-impedance
state on the falling edge of the CS.
2.1 Start Condition
The Start bit is detected by the device if CS and DI are
both high with respect to the positive edge of CLK for
the first time.
Before a Start condition is detected, CS, CLK and DI
may change in any combination (except to that of a
Start condition), without resulting in any device opera-
tion (Read, Write, Erase, EWEN, EWDS, ERAL and
WRAL). As soon as CS is high, the device is no longer
in the Standby mode.
An instruction following a Start condition will only be
executed if the required amount of opcode, address
and data bits for any particular instruction are clocked
in.
After execution of an instruction (i.e., clock in or out of
the last required address or data bit) CLK and DI
become “don't care” bits until a new Start condition is
detected.
2.2 DI/DO
It is possible to connect the Data In and Data Out pins
together. However, with this configuration it is possible
for a “bus conflict” to occur during the “dummy zero”
that precedes the read operation, if A0 is a logic high
level. Under such a condition the voltage level seen at
Data Out is undefined and will depend upon the relative
impedances of Data Out and the signal source driving
A0. The higher the current sourcing capability of A0,
the higher the voltage at the Data Out pin.
93C76/86
2.3 Erase/Write Enable and Disable
(EWEN, EWDS)
The 93C76/86 powers up in the Erase/Write Disable
(EWDS) state. All programming modes must be
preceded by an Erase/Write Enable (EWEN) instruction.
Once the EWEN instruction is executed, programming
remains enabled until an EWDS instruction is executed
or VCC is removed from the device. To protect against
accidental data disturb, the EWDS instruction can be
used to disable all erase/write functions and should
follow all programming operations. Execution of a READ
instruction is independent of both the EWEN and EWDS
instructions.
2.4 Data Protection
During power-up, all programming modes of operation
are inhibited until VCC has reached a level greater than
1.4V. During power-down, the source data protection
circuitry acts to inhibit all programming modes when
VCC has fallen below 1.4V.
The EWEN and EWDS commands give additional
protection against accidentally programming during
normal operation.
After power-up, the device is automatically in the
EWDS mode. Therefore, an EWEN instruction must be
performed before any ERASE or WRITE instruction can
be executed.
1996-2012 Microchip Technology Inc.
DS21132F-page 5