93C86.pdf 데이터시트 (총 20 페이지) - 파일 다운로드 93C86 데이타시트 다운로드

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Not recommended for new designs –
Please use 93LC76C or 93LC86C.
93C76/86
8K/16K 5.0V Microwire Serial EEPROM
Features:
• Single 5.0V supply
• Low-power CMOS technology
- 1 mA active current typical
• ORG pin selectable memory configuration
1024 x 8- or 512 x 16-bit organization (93C76)
2048 x 8- or 1024 x 16-bit organization (93C86)
• Self-timed erase and write cycles
(including auto-erase)
• Automatic ERAL before WRAL
• Power on/off data protection circuitry
• Industry standard 3-wire serial I/O
• Device status signal during erase/write cycles
• Sequential read function
• 1,000,000 erase/write cycles ensured
• Data retention > 200 years
• 8-pin PDIP/SOIC package
• Temperature ranges supported
- Commercial (C):
- Industrial (I):
- Automotive (E)
0°C to +70°C
-40°C to +85°C
-40°C to +125°C
Description:
The Microchip Technology Inc. 93C76/86 are 8K and
16K low voltage serial Electrically Erasable PROMs.
The device memory is configured as x8 or x16 bits
depending on the ORG pin setup. Advanced CMOS
technology makes these devices ideal for low power
nonvolatile memory applications. These devices also
have a Program Enable (PE) pin to allow the user to
write protect the entire contents of the memory array.
The 93C76/86 is available in standard 8-pin PDIP and
8-pin surface mount SOIC packages.
Package Types
PDIP Package
CS 1
CLK 2
DI 3
DO 4
SOIC Package
CS 1
CLK 2
DI 3
DO 4
8 VCC
7 PE
6 ORG
5 VSS
8 VCC
7 PE
6 ORG
5 VSS
Block Diagram
VCC VSS
Memory
Array
Data
Register
DI
Mode
PE Decode
CS Logic
Address
Decoder
Address
Counter
Output
Buffer
DO
CLK
Clock
Generator
1996-2012 Microchip Technology Inc.
DS21132F-page 1

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93C76/86
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings(†)
VCC.............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. VSS ........................................................................................................ -0.6V to Vcc + 1.0V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied ................................................................................................-40°C to +125°C
Soldering temperature of leads (10 seconds) .......................................................................................................+300°C
ESD protection on all pins ..........................................................................................................................................4 kV
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
1.1 AC Test Conditions
AC Waveform:
VLO = 2.0V
VHI = Vcc - 0.2V
VHI = 4.0V for
(Note 1)
(Note 2)
Timing Measurement Reference Level
Input
0.5 VCC
Output
0.5 VCC
Note 1: For VCC 4.0V
2: For VCC > 4.0V
DS21132F-page 2
1996-2012 Microchip Technology Inc.

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93C76/86
TABLE 1-1: DC CHARACTERISTICS
DC CHARACTERISTICS
Parameter
Applicable over recommended operating ranges shown below unless otherwise noted:
VCC = +4.5V to +5.5V
Commercial (C): TA = 0°C to -40°C
Industrial
(I): TA = -40°C to +85°C
Automotive (E): TA = -40C to +125C
Symbol
Min.
Max.
Units
Conditions
High-level input voltage
Low-level input voltage
Low-level output voltage
High-level output voltage
Input leakage current
Output leakage current
Pin capacitance
(all inputs/outputs)
Operating current
Standby current
VIH1
VIL1
VOL1
VOL2
VOH1
VOH2
ILI
ILO
CINT
ICC write
ICC read
ICCS
2.0
-0.3
2.4
VCC-0.2
-10
-10
VCC +1
0.8
0.4
0.2
10
10
7
3
1.5
100
V
V
V
V
V
V
A
A
pF
mA
mA
A
Note 1: This parameter is periodically sampled and not 100% tested.
IOL = 2.1 mA; VCC = 4.5V
IOL =100 A; VCC = 4.5V
IOH = -400 A; VCC = 4.5V
IOH = -100 A; VCC = 4.5V.
VIN = 0.1V to VCC
VOUT = 0.1V to VCC
(Note 1)
TA = +25°C, FCLK = 1 MHz
FCLK = 2 MHz; VCC = 5.5V
FCLK = 2 MHz; VCC = 5.5V
CLK = CS = 0V; VCC = 5.5V
DI = PE = VSS
ORG = VSS or VCC
TABLE 1-2: AC CHARACTERISTICS
AC CHARACTERISTICS
Applicable over recommended operating ranges shown below unless otherwise noted:
VCC = +4.5V to +5.5V
Commercial (C): TA = 0°C to -40°C
Industrial (I): TA = -40°C to +85°C
Automotive (E): TA = -40C to +125C
Parameter
Symbol
Min.
Max.
Units
Conditions
Clock frequency
FCLK
— 2 MHz Vcc 4.5V
Clock high time
TCKH
300 — ns
Clock low time
TCKL
200 — ns
Chip select setup time
TCSS
50 — ns Relative to CLK
Chip select hold time
TCSH
0 — ns
Chip select low time
TCSL
250 — ns Relative to CLK
Data input setup time
TDIS
100 — ns Relative to CLK
Data input hold time
TDIH
100 — ns Relative to CLK
Data output delay time
TPD
— 400 ns CL = 100 pF
Data output disable time TCZ
— 100 ns (Note 1)
Status valid time
Program cycle time
TSV
TWC
— 500 ns CL = 100 pF
— 10 ms Erase/Write mode (Note 2)
TEC — 15 ms ERAL mode
TWL — 30 ms WRAL mode
Endurance
— 1M — cycles 25°C, VCC = 5.0V, Block mode
(Note 3)
Note 1: This parameter is periodically sampled and not 100% tested.
2: Typical program cycle is 4 ms per word.
3: This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total EnduranceModel which can be obtained from Microchip’s web site
at www.microchip.com.
1996-2012 Microchip Technology Inc.
DS21132F-page 3