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PS11PS01116016
FLAFTL-BATA-SBEASTEYPTEYPE
INSIUNLSAUTLEADTETDYPTEYPE
PS11016
INTEGRATED FUNCTIONS AND FEATURES
• 3-phase IGBT inverter bridge configured by the latest 3rd.
generation IGBT and diode technologies.
• Circuit for dynamic braking of motor regenerative energy.
• Inverter output current capability IO (Note 1):
Type Name
100% load
150% over load
PS11016
11.0A (rms)
16.5A (rms), 1min
(Note 1) : The inverter output current is assumed to be sinu-
soidal and the peak current value of each of the
above loading cases is defined as : IOP = IO × √2
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS:
• For P-Side IGBTs : Drive circuit, High voltage isolated high-speed level shifting, Short-circuit protection (SC),
Bootstrap circuit supply scheme (Single drive-power-supply) and Under voltage protection (UV).
• For N-Side IGBTs : Drive circuit, Short circuit protection (SC), Control-supply Under voltage and Over voltage protection (OV/UV), Sys-
tem Over-temperature protection (OT), Fault output (FO) signaling circuit, and Current-Limit warning signal output
(CL)
• For Brake circuit IGBT : Drive circuit
• Warning and Fault signaling :
FO1 : Short circuit protection for lower-leg IGBTs and Input interlocking against spurious arm shoot-through.
FO2 : N-side control supply abnormality locking (OV/UV)
FO3 : System over-temperature protection (OT).
CL : Warning for inverter current overload condition
• For system feedback control : Analogue signal feedback reproducing actual inverter phase current (3φ).
• Input Interface : 5V CMOS/TTL compatible, Schmitt trigger input, and Arm-Shoot-Through interlock protection.
APPLICATION
Acoustic noise-less 2.2kW/AC200V class 3 phase inverter and other motor control applica-
tions.
PACKAGE OUTLINES
0.5
1
80.5 ± 1
71.5 ± 0.5
2 ± 0.3
(7.75)
6 ± 0.3
56 ± 0.8
4-φ4
23
2.5
20.4 ± 1
76.5 ± 1
1.2
(10.35)
31 32 33 34
10.16 ± 0.3
50.8 ± 0.8
35 36
4-R4
8.5
13
27 ± 1
Terminals Assignment:
1 CBU+
2 CBU–
3 CBV+
4 CBV–
5 CBW+
6 CBW–
7 GND
8 NC
9 VDH
10 CL
11 FO1
12 FO2
13 FO3
14 CU
15 CV
16 CW
17 UP
18 VP
19 WP
20 UN
21 VN
22 WN
23 Br
31 P
32 Br
33 N
34 U
35 V
36 W
(Fig. 1)
LABEL
Jan. 2000

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MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11016
FLAT-BASE TYPE
INSULATED TYPE
INTERNAL FUNCTIONS BLOCK DIAGRAM
Brake resistor connection,
Inrush prevention circuit,
etc.
P
B
Application Specific Intelligent
Power Module
Protection
Circuit
Level shifter
Drive Circuit
AC 200V line input
R
S
T
U
V
W
M
ZC
Z : Surge absorber.
C : AC filter (Ceramic condenser 2.2~6.5nF)
[Note : Additionally an appropriate Line-to line
surge absorber circuit may become necessary
depending on the application environment].
T
NS
Current sensing
circuit
Input signal conditioning
Drive Circuit
Fo Logic
Protection Control supply
circuit
fault sense
AC 200V line
output
CU CV CW
UP VP WP UN VN WN Br
Analogue signal output corresponding to PWM input
each phase current (5V line) Note 1) (5V line) Note 2)
CL, FO1, FO2, FO3
Fault output
(5V line) Note 3)
GND VDH
Note 1) To prevent chances of signal oscillation, a series resistor (1k) coupling at each output is recommended.
Note 2) By virtue of integrating an photo-coupler inside the module, direct coupling to CPU, without any external opto or transformer isolation is possible.
Note 3) All outputs are open collector type. Each signal line should be pulled up to plus side of the 5V power supply with approximately 5.1kresistance.
Note 4) The wiring between power DC link capacitor and P/N terminals should be as short as possible to protect the ASIPM against catastrophic high surge voltage.
For extra precaution, a small film snubber capacitor (0.1~0.22µF, high voltage type) is recommended to be mounted close to these P and N DC power input pins.
(Fig. 2)
MAXIMUM RATINGS (Tj = 25°C)
INVERTER PART (Including Brake Part)
Symbol
VCC
VCC(surge)
VP or VN
VP(S) or VN(S)
±IC(±ICP)
IC(ICP)
IF(IFP)
Item
Supply voltage
Supply voltage (surge)
Each output IGBT collector-emitter static voltage
Each output IGBT collector-emitter
switching surge voltage
Each output IGBT collector current
Brake IGBT collector current
Brake diode anode current
Condition
Applied between P-N
Applied between P-N, Surge-value
Applied between P-U, V, W, Br or U, V, W,
Br-N
Applied between P-U, V, W, Br or U, V, W,
Br-N
TC = 25°C
Note: “( )” means IC peak value
Ratings
450
500
600
600
±30 (±60)
15 (30)
15 (30)
Unit
V
V
V
V
A
A
A
CONTROL PART
Symbol
VDH, VDB Supply voltage
Item
VCIN
VFO
IFO
VCL
ICL
ICO
Input signal voltage
Fault output supply voltage
Fault output current
Current-limit warning (CL) output voltage
CL output current
Analogue current signal output current
Condition
Applied between VDH-GND, CBU+-CBU–,
CBV+-CBV–, CBW+-CBW–
Applied between UP · VP · WP · UN · VN ·
WN · Br-GND
Applied between FO1 · FO2 · FO3-GND
Sink current of FO1 · FO2 · FO3
Applied between CL-GND
Sink current of CL
Sink current of CU · CV · CW
Ratings
20
–0.5 ~ 7.5
–0.5 ~ 7
15
–0.5 ~ 7
15
±1
Unit
V
V
V
mA
V
mA
mA
Jan. 2000

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MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11016
FLAT-BASE TYPE
INSULATED TYPE
TOTAL SYSTEM
Symbol
Item
Condition
Ratings
Unit
Tj Junction temperature
(Note 2)
–20 ~ +125
°C
Tstg Storage temperature
–40 ~ +125
°C
TC Module case operating temperature
(Fig. 3)
–20 ~ +100
°C
Viso Isolation voltage
60 Hz sinusoidal AC applied between all terminals and
the base plate for 1 minute.
2500
Vrms
Mounting torque
Mounting screw: M3.5
0.78 ~ 1.27
N·m
Note 2) The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the ASIPM to ensure safe operation. How-
ever, these power elements can endure instantaneous junction temperature as high as 150°C instantaneously . To make use of this ad-
ditional temperature allowance, a detailed study of the exact application conditions is required and, accordingly, necessary information
is requested to be provided before use.
CASE TEMPERATURE MEASUREMENT POINT (3mm from the base surface)
TC
(Fig. 3)
THERMAL RESISTANCE
Symbol
Item
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Rth(c-f)
Junction to case Thermal
Resistance
Contact Thermal Resistance
Condition
Inverter IGBT (1/6)
Inverter FWDi (1/6)
Brake IGBT
Brake FWDi
Case to fin, thermal grease applied
Ratings
Min. Typ. Max.
Unit
— — 2.3 °C/W
— — 2.4 °C/W
— — 2.9 °C/W
— — 4.5 °C/W
— — 0.040 °C/W
ELECTRICAL CHARACTERISTICS (Tj = 25°C, VDH = 15V, VDB = 15V unless otherwise noted)
Symbol
Item
Condition
VCE(sat)
VEC
VCE(sat)Br
VFBr
ton
tc(on)
toff
tc(off)
trr
Collector-emitter saturation voltage
FWDi forward voltage
Brake IGBT
Collector-emitter saturation voltage
Brake diode forward voltage
Switching times
FWD reverse recovery time
Short circuit endurance
(Output, Arm, and Load,
Short Circuit Modes)
VDH = VDB = 15V, Input = ON, Tj = 25°C, Ic = 30A
Tj = 25°C, Ic = –30A, Input = OFF
VDH = 15V, Input = ON, Tj = 25°C, Ic = 15A
Tj = 25°C, IF = 15A, Input = OFF
1/2 Bridge inductive, Input = ON
VCC = 300V, Ic = 30A, Tj = 125°C
VDH = 15V, VDB = 15V
Note : ton, toff include delay time of the internal control
circuit
VCC 400V, Input = ON (one-shot)
Tj = 125°C start
13.5V VDH = VDB 16.5V
Ratings
Min. Typ. Max.
— — 2.9
— — 2.9
— — 3.5
— — 2.9
0.35 0.7
1.8
0.35
0.9
— 1.3 2.0
— 0.5 1.0
— 0.15 —
Unit
V
V
V
V
µs
µs
µs
µs
µs
• No destruction
• FO output by protection operation
Switching SOA
VCC 400V, Tj 125°C,
Ic < IOL(CL) operation level, Input = ON,
13.5V VDH = VDB 16.5V
• No destruction
• No protecting operation
• No FO output
IDH
Vth(on)
Vth(off)
Ri
Circuit current
Input on threshold voltage
Input off threshold voltage
Input pull-up resister
VDH = 15V, VCIN = 5V
Integrated between input terminal-VDH
— — 150 mA
0.8 1.4 2.0 V
2.5 3.0 4.0 V
— 150 — k
Jan. 2000