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PS12P0S11220-1A2-A
FLAFTL-BATA-SBEASTEYPTEYPE
INSIUNLSAUTLEADTETDYPTEYPE
PS12012-A
INTEGRATED FUNCTIONS AND FEATURES
• 3-Phase IGBT inverter bridge configured by the latest 3rd.
generation IGBT and diode technologies.
• Circuit for dynamic braking of motor regenerative energy.
• Inverter output current capability Io (Note 1) :
Type Name
PS12012-A
100% load
1.2A (rms)
150% over load
1.8A (rms), 1min
(Note 1) : The inverter output current is assumed to be sinu-
soidal and the peak current value of each of the
above loading cases is defined as : Iop = Io ! √2
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS:
• For P-Side IGBTs : Drive circuit, High-speed photo-couplers, Short circuit protection (SC),
Bootstrap circuit supply scheme (Single drive power supply ) and Under-voltage protection (UV).
• For N-Side IGBTs : Drive circuit, Short-circuit protection (SC), Control supply Under voltage and Over voltage protection (OV/UV),
System Over temperature protection (OT), Fault output signaling circuit (Fo), and Current-Limit warning signal out-
put (CL).
• For Brake circuit IGBT : Drive circuit.
• Warning and Fault signaling :
FO1 : Short circuit protection for lower-leg IGBTs and Input interlocking against spurious arm shoot-through.
FO2 : N-side control supply abnormality locking (OV/UV)
FO3 : System over-temperature protection (OT).
CL : Warning for inverter current overload condition
• For system feedback control : Analogue signal feedback reproducing actual inverter output phase current (3φ).
• Input Interface : 5V CMOS/TTL compatible, Schmitt trigger input, and Arm-Shoot-Through interlock protection.
APPLICATION
Acoustic noise-less 0.2kW/AC400V Class 3 Phase inverter and other motor control applica-
tions.
PACKAGE OUTLINES
0.5
1
80.5 ± 1
71.5 ± 0.5
2 ± 0.3
(7.75)
6 ± 0.3
56 ± 0.8
4-φ4
23
2.5
20.4 ± 1
76.5 ± 1
1.2
(10.35)
31 32 33 34
10.16 ± 0.3
50.8 ± 0.8
35 36
4-R4
8.5
13
27 ± 1
Terminals Assignment:
1 CBU+
2 CBU–
3 CBV+
4 CBV–
5 CBW+
6 CBW–
7 GND
8 VDL
9 VDH
10 CL
11 FO1
12 FO2
13 FO3
14 CU
15 CV
16 CW
17 UP
18 VP
19 WP
20 UN
21 VN
22 WN
23 Br
31 P
32 B
33 N
34 U
35 V
36 W
(Fig. 1)
LABEL
Jan. 2000

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MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS12012-A
FLAT-BASE TYPE
INSULATED TYPE
INTERNAL FUNCTIONS BLOCK DIAGRAM
Brake resistor connection,
Inrush prevention circuit,
etc.
P
B
Application Specific Intelligent
Power Module
Protection
Circuit
Input Circuit
Drive Circuit
AC 400V class line input
R
S
T
ZC
N
U
V
W
M
AC 400V class
line output
T
S
Z : Surge absorber.
C : AC filter (Ceramic condenser 2.2~6.5nF)
[Note : Additionally an appropriate Line-to line
surge absorber circuit may become necessary
depending on the application environment].
Current sensing
circuit
Input signal conditioning
Drive Circuit
Fo Logic
Protection Control supply
circuit
fault sense
CU CV CW
UP VP WP UN VN WN Br CL,FO1,FO2,FO3
Analogue signal output corresponding to PWM input
Fault output
GND VDL VDH
each phase current (5V line) Note 1) (5V line) Note 2)
(5V line) Note 3)
Note 1) To prevent chances of signal oscillation, a series resistor (1k) coupling at each output is recommended.
Note 2) By virtue of integrating a photo-coupler inside the module, direct coupling to CPU, without any extemal opto or transformer isolation is possible.
Note 3) All outputs are open collector type. Each signal line should be pulled up to plus side of the 5V power supply with approximately 5.1kresistance.
Note 4) The wiring between power DC link capacitor and P/N terminals should be as short as possible to protect the ASIPM against catastrophic high surge voltage.
For extra precaution, a small film snubber capacitor (0.1~0.22µF, high voltage type) is recommended to be mounted close to these P and N DC power input pins.
(Fig. 2)
MAXIMUM RATINGS (Tj = 25°C)
INVERTER PART (Including Brake Part)
Symbol
Item
Condition
VCC Supply voltage
Applied between P-N
VCC(surge) Supply voltage (surge)
Applied between P-N, Surge-value
VP or VN Each output IGBT collector-emitter static voltage Applied between P-U, V, W, Br or U, V, W, Br-N
VP(S) or
VN(S)
Each output IGBT collector-emitter surge voltage Applied between P-U, V, W, Br or U, V, W, Br-N
±Ic(±Icp)
Ic(Icp)
IF(IFP)
Each output IGBT collector current
Brake IGBT collector current
Brake diode anode current
TC = 25°C
Note : “( )” means IC peak value
Ratings
900
1000
1200
1200
±5 (±10)
5 (10)
5 (10)
Unit
V
V
V
V
A
A
A
CONTROL PART
Symbol
Item
VDH, VDB Supply voltage
VDL
VCIN
Supply voltage
Input signal voltage
VFO Fault output supply voltage
IFO Fault output current
VCL Current-limit warning output voltage
ICL CL output current
ICO Analogue-current-signal output current
Condition
Applied between VDH-GND, CBU+-CBU–,
CBV+-CBV–, CBW+-CBW–
Applied between VDL-GND
Applied between UP · VP · WP · UN · VN ·
WN · Br-GND
Applied between FO1 · FO2 · FO3-GND
Sink current of FO1 · FO2 · FO3
Applied between CL-GND
Sink current of CL
Sink current of CU · CV · CW
Ratings
20
7
–0.5 ~ VDL+0.5
–0.5 ~ 7
15
–0.5 ~ 7
15
±1
Unit
V
V
V
V
mA
V
mA
mA
Jan. 2000

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MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS12012-A
FLAT-BASE TYPE
INSULATED TYPE
TOTAL SYSTEM
Symbol
Item
Condition
Ratings
Unit
Tj Junction temperature
(Note 2)
–20 ~ +125
°C
Tstg Storage temperature
–40 ~ +125
°C
TC Module case operating temperature
(Fig. 3)
–20 ~ +100
°C
VISO
Isolation voltage
60 Hz sinusoidal AC for 1 minute, between all terminals
and base plate.
2500
Vrms
— Mounting torque
Mounting screw: M3.5
0.78 ~ 1.27
N·m
Note 2) : The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the ASIPM to ensure safe operation.
However, these power elements can endure instantaneous junction temperature as high as 150°C. To make use of this additional
temperature allowance, a detailed study of the exact application conditions is required and, accordingly, necessary information is
to be provided before use.
CASE TEMPERATURE MEASUREMENT POINT (3mm from the base surface)
TC
(Fig. 3)
THERMAL RESISTANCE
Symbol
Item
Rth(jc)Q
Rth(jc)F
Rth(jc)QB
Rth(jc)FB
Rth(c-f)
Junction to case Thermal
Resistance
Contact Thermal Resistance
Condition
Inverter IGBT (1/6)
Inverter FWDi (1/6)
Brake IGBT
Brake FWDi
Case to fin, thermal grease applied (1 Module)
Ratings
Min. Typ. Max.
Unit
— — 3.0 °C/W
— — 7.3 °C/W
— — 3.0 °C/W
— — 7.3 °C/W
— — 0.040 °C/W
ELECTRICAL CHARACTERISTICS (Tj = 25°C, VDH = 15V , VDB = 15V, VDL = 5V unless otherwise noted)
Symbol
Item
Condition
Ratings
Min. Typ. Max.
Unit
VCE(sat)
VEC
VCE(sat)Br
VFBr
ton
tc(on)
toff
tc(off)
trr
IDH
IDL
Vth(on)
Vth(off)
Ri
Collector-emitter saturation
voltage
VDL = 5V, VDH = VDB = 15V Input = ON,
Tj = 25°C, Ic = 5A
FWDi forward voltage
Tj = 25°C, Ic = –5A, Input = OFF
Brake IGBT
Collector-emitter saturation voltage
VDL = 5V, VDH = 15V Input = ON, Tj = 25°C, Ic = 5A
Brake diode forward voltage Tj = 25°C, IF = 5A, Input = OFF
1/2 Bridge inductive, Input = ON
Switching times
VCC = 600V, Ic = 5A, Tj = 125°C
VDL = 5V, VDH = 15V, VDB = 15V
FWD reverse recovery time
Note : ton, toff include delay time of the internal control
circuit.
Short circuit endurance
(Output, Arm, and Load,
Short Circuit Modes)
VCC 800V, Input = ON (One-Shot)
Tj = 125°C start
13.5V VDH = VDB = 16.5V
Switching SOA
VCC 800V, Tj 125°C,
Ic < IOL(CL) operation level, Input = ON,
VDH Circuit Current
13.5V VDH = VDB = 16.5V
VDL = 5V, VDH = 15V, VCIN = 5V
VDL Circuit Current
VDL = 5V, VDH = 15V, VCIN = 5V
Input on threshold voltage
Input off threshold voltage
Input pull-up resistor
Integrated between input terminal-VDH
— — 3.6 V
— — 3.5 V
— — 3.6 V
— — 3.5 V
0.3 1.2 2.0 µs
— 0.5 1.4 µs
— 2.2 4.0 µs
— 0.9 1.6 µs
— 0.2 — µs
• No destruction
• FO output by protection operation
• No destruction
• No protecting operation
• No FO output
——
——
150
50
0.8 1.4 2.0
2.5 3.0 4.0
— 150 —
mA
mA
V
V
k
Jan. 2000