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DATA SHEET
OCMOS FETTM
PS7341-1B,PS7341L-1B
HIGH ISOLATION VOLTAGE 6-PIN DIP OCMOS FET
(1-ch OCMOS FET)
DESCRIPTION
The PS7341-1B and PS7341L-1B are solid state relays containing a GaAs LED on the light emitting side (input
side) and normally close (N.C.) contact MOS FETs on the output side.
They are suitable for analog signal control because of their low offset and high linearity.
The PS7341L-1B has a surface mount type lead.
FEATURES
• High isolation voltage (BV = 3 750 Vr.m.s.)
• 1 channel type (1 b output)
• Low LED Operating Current (IF = 2 mA)
• Designed for AC/DC switching line changer
• Small package (6-pin DIP)
• Low offset voltage
• PS7341L-1B: Surface mount type
• UL approved: File No. E72422 (S)
• BSI approved: No. 8252/8253
• CSA approved: CA 101391
APPLICATIONS
• Exchange equipment
• Measurement equipment
• FA/OA equipment
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14229EJ1V0DS00 (1st edition)
Date Published June 1999 NS CP(K)
Printed in Japan
©
1999

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PACKAGE DIMENSIONS (in millimeters)
PS7341-1B,PS7341L-1B
9.25±0.5
PS7341-1B
TOP VIEW
6 54
123
1. LED Anode
2. LED Cathode
3. NC
4. MOS FET Drain
5. MOS FET Source
6. MOS FET Drain
7.62
6.5±0.5
0.5±0.1
1.34±0.1
0.25 M
2.54
9.25±0.5
1.34±0.1
0.25 M
2.54
0 to 15˚
PS7341L-1B
TOP VIEW
6 54
123
1. LED Anode
2. LED Cathode
3. NC
4. MOS FET Drain
5. MOS FET Source
6. MOS FET Drain
6.5±0.5
0.9±0.25
9.60±0.4
2 Data Sheet P14229EJ1V0DS00

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PS7341-1B,PS7341L-1B
ORDERING INFORMATION
Part Number
PS7341-1B
PS7341L-1B
PS7341L-1B-E3
PS7341L-1B-E4
Package
8-pin DIP
Packing Style
Magazine case 50 pcs
Embossed Tape 1 000 pcs/reel
Application Part Number*1
PS7341-1B
PS7341L-1B
*1 For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)
Parameter
Symbol
Diode
Forward Current (DC)
IF
Reverse Voltage
VR
Power Dissipation
Peak Forward Current *1
PD
IFP
MOS FET Break Down Voltage
VL
Continuous
Load Current*2
Connection A
Connection B
IL
Connection C
Pulse Load Current*3
(AC/DC Connection)
ILP
Power Dissipation
Isolation Voltage *4
PD
BV
Total Power Dissipation
PT
Operating Ambient Temperature
TA
Storage Temperature
Tstg
Ratings
50
5.0
50
1
400
150
200
300
300
560
3 750
610
40 to +85
40 to +125
Unit
mA
V
mW
A
V
mA
mA
mW
Vr.m.s.
mW
°C
°C
*1 PW = 100 µs, Duty Cycle = 1 %
*2 Conditions: IF 2 mA. The following types of load connections are available.
1
A2
3
1
2
3
B1
2
3
1
C2
3
6
5
IL
4
6
5 IL
4
6
5 IL
4
6 IL
5
4 IL
L
L
L
L
IL + IL
VL (AC/DC)
+
VL (DC)
+ VL (DC)
+
VL (DC)
*3 PW = 100 ms, 1shot
*4 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
Data Sheet P14229EJ1V0DS00
3

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PS7341-1B,PS7341L-1B
RECOMMENDED OPERATING CONDITIONS (TA = 25 °C)
Parameter
LED Operating Current
LED Off Voltage
Symbol
IF
VF
MIN.
2
0
TYP.
10
MAX.
20
0.5
Unit
mA
V
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter
Symbol
Conditions
Diode
Forward Voltage
VF IF = 10 mA
Reverse Current
IR VR = 5 V
MOS FET Off-state Leakage Current ILoff IF = 10 mA, VD = 400 V
Output Capacitance
Cout IF = 10 mA, VD = 0 V, f = 1 MHz
Coupled LED Off-state Current
IFoff IL = 150 mA
On-state Resistance
Ron1 IF = 0 mA, IL = 10 mA
Turn-on Time *1
Turn-off Time *1
Ron2 IF = 0 mA, IL = 150 mA
ton IF = 10 mA, VO = 5 V, PW 10 ms
toff
Isolation Resistance
RI-O
VI-O = 1.0 kVDC
Isolation Capacitance
CI-O V = 0 V, f = 1 MHz
*1 Test Circuit for Switching Time
Pulse Input
IF
VL Input
MIN.
109
TYP.
1.2
0.5
185
20
16
0.03
0.6
MAX.
1.4
5.0
10
2.0
30
25
0.2
1.5
1.1
Unit
V
µA
µA
pF
mA
ms
pF
50 %
0
Input monitor
Rin
VO monitor
VO = 5 V
Output
RL
toff
90 %
10 %
ton
4 Data Sheet P14229EJ1V0DS00

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PS7341-1B,PS7341L-1B
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
MAXIMUM FORWARD CURRENT vs.
AMBIENT TEMPERATURE
100
MAXIMUM LOAD CURRENT vs.
AMBIENT TEMPERATURE
300
80
200
60
40
100
20
0
–25 0 25
50
75 85 100
Ambient Temperature TA (˚C)
FORWARD VOLTAGE vs.
AMBIENT TEMPERATURE
1.8
IF = 50 mA
1.6 30 mA
20 mA
10 mA
1.4 5 mA
1 mA
1.2
1.0
0
–25 0
25 50 75 85 100
Ambient Temperature TA (˚C)
OUTPUT CAPACITANCE vs.
APPLIED VOLTAGE
200
f = 1 MHz
150
100
50
0.8
–25
0 25 50 75
Ambient Temperature TA (˚C)
100
OFF-STATE LEAKAGE CURRENT vs.
APPLIED VOLTAGE
10–4
TA = 80 ˚C
10–5
0 20 40 60 80 100 120
Applied Voltage VD (V)
LOAD CURRENT vs. LOAD VOLTAGE
200
IF = 0 mA
100
10–6
25 ˚C
–4.0 –2.0
0
2.0 4.0
10–7
–100
10–8
0
100 200 300 400
Applied Voltage VD (V)
500
–200
Load Voltage VL (V)
Data Sheet P14229EJ1V0DS00
5