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NTE71
Silicon NPN Transistor
High Current Amp, Fast Switch
Description:
The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that
provides surface stabilization for high voltage operation and enhances long term reliability.
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Emitter–Base VOltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Electrical Characteristics: (TC = +25°C unless otherwise spcified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector–Emitter Sustaining Voltage
Emitte Cutoff Current
Collector Cutoff Current
ON Characteristics (Note 1)
V(BR)CEO(sus) IC = 100mA
IEBO
VEB = 10V
ICEX
VCE = 150V, VBE = –1.5V
VCE = 150V, VBE = –1.5V,
TC = +150°C
DC Current Gain
Collector Saturation Voltage
Base–Emitter Voltage
hFE
VCE(sat)
VBE
VCE = 3V, IC = 10A
IC = 10A, IB = 1.5A
IC = 10A, IB = 1.5A
Note 1. Pulse test: Pulse Width = 300µs, Duy Cycle 2%.
Min Typ Max Unit
150 – – V
– – 250 µA
– – 2 mA
– – 20 mA
10 – 50
– – 1.5 V
– – 2.5 V

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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise spcified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Dynamic Characteristics
SmallSignal Current Gain
TurnOn Time
TurnOff Time
Rise Time
Storage Time
Fall Time
hfe VCE = 3V, IC = 10A, f = 1MHz
ton VCC = 30V, IC = 10A, IB1 = 1.5A,
toff IB2 = 1.5A
tr
ts
tf
0.6
– – 3.5 µs
– – 12.0 µs
– – 3.5 µs
– – 6.0 µs
– – 6.0 µs
Base
.500
(12.7)
Emitter
.760 (19.3) Dia
.083 (2.1) Dia
.984
(25.0)
.129 (3.3)
5/1624 UNF
.865
(21.95)
Collector/Stud
.083 (2.1) Dia
.503
(12.6)
.105
(2.65)
Max
.477
(12.1)