NTE72.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 NTE72 데이타시트 다운로드

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NTE72
Silicon NPN Transistor
High Current Amp, Fast Switch
Features:
D High Power: 100W @ TC = +50°C, VCE = 40V
D High Voltage: VCEO = 80V Min
D High Current Saturation Voltage: VCE(sat) = 1.5V @ 10A
D High Frequency: fT = 30MHz Min
D Isolated Collector Package, No Isolating hardware Required
Absolute Maximum Ratings: (Note 1)
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage (Note 2), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Total Power Dissipation (TC = +50°C, VCE = 40V), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Lead Temperature (During Soldering, 60sec max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
Note 1. These ratings are limiting values above which the serviceability of the NTE72 transistor may
be impaired.
Note 2. This rating refers to a high current point where collector–emitter voltage is lowest.
Electrical Characteistics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Emitter Sustaining Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
VCEO(sus) IC = 200mA, IB = 0, Notes 2 & 3
V(BR)CES) IC = 1mA, VBE = 0
V(BR)EBO IE = 1mA, IC = 0
DC Pulse Current Gain (Note 3)
hFE IC = 100mA, VCE = 5V
IC = 5A, VCE = 5V
IC = 5A, VCE = 5V, TC = –55°C
IC = 10A, VCE = 5V
Min Typ Max Unit
80 – – V
100 – – V
6––V
50 95 –
70 108 200
35 51 –
45 91 –
Note 2. This rating refers to a high current point where collector–emitter voltage is lowest.
Note 3. Pulse Conditions: Pulse Width = 300µs, Duty Cycle = 1%.

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Electrical Characteistics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
High Frequency Current Gain
CollectorEmitter Saturation Voltage
hfe IC = 2A, VCE = 5V, f = 20MHz
VCE(sat) IC = 5A, IB = 0.5A, Note 3
2.0 2.8
0.55 0.9
V
IC = 10A, IB = 1A, Note 3
1.1 1.5 V
BaseEmitter Saturation Voltage
BaseEmitter ON Voltage
Collector Cutoff Current
Collector Reverse Current
Emitter Cutoff Current
CollectorBase Capacitance
VBE(sat) IC = 5A, IB = 0.5A, Note 3
1.2 1.8 V
IC = 10A, IB = 1A, Note 3
1.7 2.2 V
VBE(on) IC = 5A, VCE = 5V, Note 3
– – 1.8 V
ICES VCE = 60V, VBE = 0
0.014 1.0 µA
ICEX VCE = 60V, VEB = 2V, TC = +150°C
500 µA
IEBO VEB = 5V, IC = 0
– – 1.0 µA
Ccb VCB = 10V, IE = 0, f = 1MHz
235 275 pF
Note 3. Pulse Conditions: Pulse Width = 300µs, Duty Cycle = 1%.
Base
.400
(10.16)
.682
(17.32)
Emitter
.600 (19.15)
Dia
Collector/
Isolated Stud
.061 (1.53) Dia
.755
(19.15)
.090 (2.28) Max
1/428 UNF2A
.412
(10.44)
.115
(2.93)
.440
(11.17)