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HITFET®BTS 917
Smart Lowside Power Switch
Features
Product Summary
Logic Level Input
Drain source voltage
Input Protection (ESD)
On-state resistance
Thermal Shutdown
Current limit
Overload protection
Nominal load current
Short circuit protection
Clamping energy
Overvoltage protection
Current limitation
Maximum current adjustable with external resistor
Current sense
Status feedback with external input resistor
Analog driving possible
VDS
RDS(on)
ID(lim)
ID(ISO)
EAS
60 V
100 m
1.5 A
3.5 A
1000 mJ
Application
All kinds of resistive, inductive and capacitive loads in switching or
linear applications
µC compatible power switch for 12 V and 24 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS® chip on chip tech-
nology. Fully protected by embedded protected functions.
1
IN
2
NC
dv/dt
limitation
Current
limitation
Overvoltage
protection
Vbb
+
LOAD
Drain
3
M
4 CC
RCC
ESD
Overload
protection
Over-
temperature
protection
SShhoorrtt cciirrccuuiitt
pprrootteeccttiioonn
Source
HITFET®
5
Semiconductor Group
Page 1
14.07.1998

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BTS 917
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Drain source voltage
Drain source voltage for short circuit protection
RCC = 0
without RCC
VDS
VDS(SC)
Continuous input current 1)
-0.2V VIN 10V
VIN < -0.2V or VIN > 10V
IIN
Operating temperature
Storage temperature
Tj
Tstg
Power dissipation
TC = 25 °C
Ptot
Unclamped single pulse inductive energy
ID(ISO) = 3.5 A
EAS
Electrostatic discharge voltage (Human Body Model) VESD
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
Load dump protection VLoadDump2) = VA + VS
VIN=low or high; VA=13.5 V
td = 400 ms, RI = 2 , ID=0,5*3.5A
td = 400 ms, RI = 2 , ID= 3.5A
DIN humidity category, DIN 40 040
VLD
IEC climatic category; DIN IEC 68-1
Value
60
15
50
no limit
| IIN | 2
- 40 ... +150
- 55 ... +150
50
1000
3000
75
70
E
40/150/56
Unit
V
mA
°C
W
mJ
V
Thermal resistance
junction - case:
junction - ambient:
SMD version, device on PCB: 3)
RthJC
RthJA
RthJA
2.5 K/W
75
45
1A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3)
2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical
without blown air.
Semiconductor Group
Page 2
14.07.1998

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BTS 917
Electrical Characteristics
Parameter
Symbol
at Tj=25°C, unless otherwise specified
Characteristics
Drain source clamp voltage
Tj = - 40 ...+ 150°C, ID = 10 mA
VDS(AZ)
Off state drain current
VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V
Input threshold voltage
ID = 0,7 mA
IDSS
VIN(th)
Input current - normal operation, ID<ID(lim):
VIN = 10 V
IIN(1)
Input current - current limitation mode, ID=ID(lim): IIN(2)
VIN = 10 V
Input current - after thermal shutdown, ID=0 A: IIN(3)
VIN = 10 V
Input holding current after thermal shutdown
IIN(H)
Tj = 25 °C
Tj = 150 °C
On-state resistance
ID = 3.5 A, VIN = 5 V, Tj = 25 °C
ID = 3.5 A, VIN = 5 V, Tj = 150 °C
RDS(on)
On-state resistance
ID = 3.5 A, VIN = 10 V, Tj = 25 °C
ID = 3.5 A, VIN = 10 V, Tj = 150 °C
RDS(on)
Nominal load current (ISO 10483)
VIN = 10 V, VDS = 0.5 V, TC = 85 °C
ID(ISO)
Values
Unit
min. typ. max.
60 - 73 V
- - 5 µA
1.3 1.7 2.2 V
- 30 60 µA
- 120 300
- 2200 4000
500 -
300 -
-
-
m
- 90 120
- 180 240
- 80 100
- 160 200
3.5 -
-A
Semiconductor Group
Page 3
14.07.1998