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a
Ultralow Power, Rail-to-Rail Output
Operational Amplifiers
OP181/OP281/OP481
FEATURES
Low Supply Current: 4 A/Amplifier max
Single-Supply Operation: 2.7 V to 12 V
Wide Input Voltage Range
Rail-to-Rail Output Swing
Low Offset Voltage: 1.5 mV
No Phase Reversal
APPLICATIONS
Comparator
Battery Powered Instrumentation
Safety Monitoring
Remote Sensors
Low Voltage Strain Gage Amplifiers
GENERAL DESCRIPTION
The OP181, OP281 and OP481 are single, dual and quad
ultralow power, single-supply amplifiers featuring rail-to-rail
outputs. All operate from supplies as low as 2.0 V and are
specified at +3 V and +5 V single supply as well as ± 5 V dual
supplies.
Fabricated on Analog Devices’ CBCMOS process, the OP181
family features a precision bipolar input and an output that
swings to within millivolts of the supplies and continues to sink
or source current all the way to the supplies.
Applications for these amplifiers include safety monitoring,
portable equipment, battery and power supply control, and
signal conditioning and interface for transducers in very low
power systems.
The output’s ability to swing rail-to-rail and not increase supply
current, when the output is driven to a supply voltage, enables
the OP181 family to be used as comparators in very low power
systems. This is enhanced by their fast saturation recovery time.
Propagation delays are 250 µs.
The OP181/OP281/OP481 are specified over the extended
industrial (–40°C to +85°C) temperature range. The OP181,
single, and OP281, dual, amplifiers are available in 8-pin plastic
DIPs and SO surface mount packages. The OP281 is also
available in 8-lead TSSOP. The OP481 quad is available in 14-
pin DIPs, narrow 14-pin SO and TSSOP packages.
PIN CONFIGURATIONS
8-Lead SO
(S Suffix)
8-Lead Epoxy DIP
(P Suffix)
NULL
–IN A
+IN A
V–
18
OP181
45
NC
V+
OUT A
NULL
NC = NO CONNECT
NULL 1
–IN A 2
+IN A 3
V– 4
OP181
8 NC
7 V+
6 OUT A
5 NULL
NC = NO CONNECT
8-Lead SO
(S Suffix)
OUT A
–IN A
+IN A
V–
18
OP281
45
V+
OUT B
–IN B
+IN B
8-Lead TSSOP
(RU Suffix)
18
OP281
45
8-Lead Epoxy DIP
(P Suffix)
OUT A 1
–IN A 2
+IN A 3
V– 4
OP281 8 V+
7 OUT B
6 –IN B
5 +IN B
14-Lead Epoxy DIP
(P Suffix)
OUT A 1
–IN A 2
+IN A 3
V+ 4
+IN B 5
–IN B 6
OUT B 7
OP481
14 OUT D
13 –IN D
12 +IN D
11 V–
10 +IN C
9 –IN C
8 OUT C
NOTE: PIN ORIENTATION IS EQUIVALENT FOR
EACH PACKAGE VARIATION
14-Lead
Narrow-Body SO
(S Suffix)
1 14
OP481
78
14-Lead TSSOP
(RU Suffix)
1 14
OP481
78
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700 World Wide Web Site: http://www.analog.com
Fax: 617/326-8703
© Analog Devices, Inc., 1996

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OP181/OP281/OP481–SPECIFICATIONS
ELECTRICAL SPECIFICATIONS (@ VS = +3.0 V, VCM = 1.5 V, TA = +25؇C unless otherwise noted)
Parameter
Symbol
Conditions
Min Typ
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Offset Voltage Drift
Bias Current Drift
Offset Current Drift
OUTPUT CHARACTERISTICS
Output Voltage High
Output Voltage Low
Short Circuit Limit
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
VOS
IB
IOS
CMRR
AVO
VOS/T
IB/T
IOS/T
VOH
VOL
ISC
PSRR
ISY
DYNAMIC PERFORMANCE
Slew Rate
Turn On Time
Turn On Time
Saturation Recovery Time
Gain Bandwidth Product
Phase Margin
SR
GBP
φo
Note 1
–40°C TA +85°C
–40°C TA +85°C
–40°C TA +85°C
VCM = 0 V to 2.0 V,
–40°C TA +85°C
RL = 1 M, VO = 0.3 V to 2.7 V
–40°C TA +85°C
RL = 100 kto GND,
–40°C TA +85°C
RL = 100 kto V+,
–40°C TA +85°C
VS = 2.7 V to 12 V
–40°C TA +85°C
VO = 0 V
–40°C TA +85°C
RL = 100 k, CL = 50 pF
AV = 1, VO = 1
AV = 20, VO = 1
3
0.1
0
65 95
5 13
2
10
20
2
2.925
2.96
25
± 1.1
76 95
3
25
40
50
65
95
70
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
en p-p
en
in
NOTES
1VOS is tested under no load condition.
Specifications subject to change without notice.
0.1 Hz to 10 Hz
f = 1 kHz
10
75
<1
Max
1.5
2.5
10
7
2
75
4
5
Units
mV
mV
nA
nA
V
dB
V/mV
V/mV
µV/°C
pA/°C
pA/°C
V
mV
mA
dB
µA
µA
V/ms
µs
µs
µs
kHz
Degrees
µV p-p
nV/Hz
pA/Hz
–2– REV. 0

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OP181/OP281/OP481
ELECTRICAL SPECIFICATIONS (@ VS = +5.0 V, VCM = 2.5 V, TA = +25؇C unless otherwise noted1)
Parameter
Symbol
Conditions
Min Typ
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Offset Voltage Drift
Bias Current Drift
Offset Current Drift
OUTPUT CHARACTERISTICS
Output Voltage High
Output Voltage Low
Short Circuit Limit
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
VOS
IB
IOS
CMRR
AVO
VOS/T
IB/T
IOS/T
VOH
VOL
ISC
PSRR
ISY
DYNAMIC PERFORMANCE
Slew Rate
Saturation Recovery Time
Gain Bandwidth Product
Phase Margin
SR
GBP
φo
Note 1
–40°C TA +85°C
–40°C TA +85°C
–40°C TA +85°C
VCM = 0 V to 4.0 V,
–40°C TA +85°C
RL = 1 M, VO = 0.5 V to 4.5 V
–40°C TA +85°C
–40°C to +85°C
0
65
5
2
0.1
3
0.1
90
15
10
20
2
RL = 100 kto GND,
–40°C TA +85°C
RL = 100 kto V+,
–40°C TA +85°C
4.925
4.96
25
± 3.5
VS = 2.7 V to 12 V,
–40°C TA +85°C
VO = 0 V
–40°C TA +85°C
RL = 100 k, CL = 50 pF
76 95
3.2
27
120
100
74
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Current Noise Density
en p-p
en
in
NOTES
1VOS is tested under a no load condition.
Specifications subject to change without notice.
0.1 Hz to 10 Hz
f = 1 kHz
10
75
<1
Max
1.5
2.5
10
7
4
75
4
5
Units
mV
mV
nA
nA
V
dB
V/mV
V/mV
µV/°C
pA/°C
pA/°C
V
mV
mA
dB
µA
µA
V/ms
µs
kHz
Degrees
µV p-p
nV/Hz
pA/Hz
REV. 0
–3–

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OP181/OP281/OP481–SPECIFICATIONS
ELECTRICAL SPECIFICATIONS (@ VS = ±5 V, TA = +25؇C unless otherwise noted)
Parameter
Symbol
Conditions
Min
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Input Offset Current
Input Voltage Range
Common-Mode Rejection
Large Signal Voltage Gain
Offset Voltage Drift
Bias Current Drift
Offset Current Drift
OUTPUT CHARACTERISTICS
Output Voltage Swing
Short Circuit Limit
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
VOS
IB
IOS
CMRR
AVO
VOS/T
IB/T
IOS/T
VO
ISC
PSRR
ISY
DYNAMIC PERFORMANCE
Slew Rate
Gain Bandwidth Product
Phase Margin
± SR
GBP
φo
Note 1
–40°C TA +85°C
–40°C TA +85°C
–40°C TA +85°C
VCM = –5.0 V to +4.0 V,
–40°C TA +85°C
RL = 1 M, VO = ± 4.0 V,
–40°C TA +85°C
–40°C to +85°C
RL = 100 kto GND,
–40°C TA +85°C
VS = ± 1.35 V to ± 6 V,
–40°C TA +85°C
VO = 0 V
–40°C TA +85°C
RL = 100 k, CL = 50 pF
–5
65
5
2
± 4.925
76
NOISE PERFORMANCE
Voltage Noise
Voltage Noise Density
Voltage Noise Density
Current Noise Density
en p-p
en
en
in
NOTES
1VOS is tested under no load condition.
Specifications subject to change without notice.
0.1 Hz to 10 Hz
f = 1 kHz
f = 10 kHz
Typ
0.1
3
0.1
95
13
10
20
2
± 4.98
12
95
3.3
28
105
75
10
85
75
<1
Max
1.5
2.5
10
7
+4
5
6
Units
mV
mV
nA
nA
V
dB
V/mV
V/mV
µV/°C
pA/°C
pA/°C
V
mA
dB
µA
µA
V/ms
kHz
Degrees
µV p-p
nV/Hz
nV/Hz
pA/Hz
–4– REV. 0

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OP181/OP281/OP481
ABSOLUTE MAXIMUM RATINGS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +16 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . Gnd to VS + 10 V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 3.5 V
Output Short-Circuit Duration to Gnd . . . . . . . . . . Indefinite
Storage Temperature Range
P, S, RU Package . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
OP181/OP281/OP481G . . . . . . . . . . . . . . . –40°C to +85°C
Junction Temperature Range
P, S, RU Package . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . +300°C
Package Type
8-Pin Plastic DIP (P)
8-Pin SOIC (S)
8-Pin TSSOP (RU)
14-Pin Plastic DIP (P)
14-Pin SOIC (S)
14-Pin TSSOP (RU)
JA*
103
158
240
76
120
240
JC Units
43 °C/W
43 °C/W
43 °C/W
33 °C/W
36 °C/W
43 °C/W
*θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket
for P-DIP packages; θJA is specified for device soldered in circuit board for TSSOP
and SOIC packages.
ORDERING GUIDE
Model
Temperature
Range
Package
Description
Package
Option
OP181GP –40°C to +85°C
OP181GS –40°C to +85°C
OP281GP –40°C to +85°C
OP281GS –40°C to +85°C
OP281GRU –40°C to +85°C
OP481GP –40°C to +85°C
OP481GS –40°C to +85°C
OP481GRU –40°C to +85°C
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin TSSOP
14-Pin Plastic DIP
14-Pin SOIC
14-Pin TSSOP
N-8
SO-8
N-8
SO-8
RU-8
N-14
SO-14
RU-14
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the OP181/OP281/OP481 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precau-
tions are recommended to avoid performance degradation or loss of functionality.
REV. 0
–5–
WARNING!
ESD SENSITIVE DEVICE