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®
SENSITIVE
MAIN FEATURES:
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
0.25
200
200
Unit
A
V
µA
DESCRIPTION
Thanks to highly sensitive triggering levels, the
PO102BL SCR is suitable for all applications
where the available gate current is limited such as
stand-by mode power supplies, smoke and alarm
detectors...
Available in SOT-23, it provides optimized space
saving on high density printed circuit boards.
P0102BL
0.25A SCRs
A
G
K
A
G
K
SOT-23
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RMS)
IT(AV)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
Parameter
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state
current
tp = 8.3 ms
tp = 10 ms
I²t Value for fusing
tp = 10 ms
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100ns
F = 60 Hz
Peak gate current
tp = 20 µs
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Tamb = 30°C
Tamb = 30°C
Tj = 25°C
Tj = 25°C
Value
0.25
0.17
7
6
0.18
Tj = 125°C
50
Tj = 125°C
Tj = 125°C
0.5
0.02
- 40 to + 150
- 40 to + 125
Unit
A
A
A
A2S
A/µs
A
W
°C
September 2000 - Ed: 3
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ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
IGT
VGT
VGD
VRG
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
Test Conditions
VD = 12 V RL = 140
VD = VDRM RL = 3.3 kRGK = 1 k
IRG = 10 µA
IT = 50 mA RGK = 1k
IG = 1 mA RGK = 1k
VD = 67 % VDRM RGK = 1k
ITM = 0.4 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
THERMAL RESISTANCES
Symbol
Rth(j-a)
Parameter
Junction to ambient (mounted on FR4 with recommended pad layout)
P0102BL
P0102BL
200
0.8
0.1
8
6
7
200
1.7
1.0
1000
1
100
Unit
µA
V
V
V
mA
mA
V/µs
V
V
m
µA
Value
400
Unit
°C/W
PRODUCT SELECTOR
Part Number
P0102BL
Voltage
200 V
Sensitivity
200 µA
Package
SOT-23
ORDERING INFORMATION
SENSITIVE
SCR
SERIES
P
CURRENT: 0.25A
01 02 B L Blank 5AA4
SENSITIVITY:
02: 200µA
VOLTAGE:
B: 200V
PACKAGE:
L: SOT-23
PACKING MODE:
Tape & Reel
OTHER INFORMATION
Part Number
P0102BL
Marking
P2B
Weight
0.01 g
Base quantity
3000
Packing mode
Tape & reel
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P0102BL
Fig. 1: Maximum average power dissipation
versus average on-state current.
P(W)
0.30
0.28 α = 180 °
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
360 °
0.06
0.04
0.02
IT(av)(A)
α
0.00
0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
K=[Zth(j-a)/Rth(j-a)]
1.00
0.10
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
Fig. 5: Relative variation of holding current
versus gate-cathode resistance (typical values).
IH[Rgk] / IH[Rgk = 1k]
20
18
16
14
12
10
8
6
4
2
0
1E-2
Rgk(kΩ)
1E-1
1E+0
1E+1
Fig. 2: Average and D.C. on-state current versus
ambient temperature.
IT(av)(A)
0.30
0.25
D.C
0.20
0.15
α = 180°
0.10
0.05
0.00
0
25
Tamb(°C)
50 75
100 125
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT, IH, IL[Tj] / IGT , IH, IL[Tj = 25 °C]
6
5
4
3 IGT
2
1
Tj(°C)
IH & IL
(Rgk = 1k )
0
-40 -20 0 20 40 60 80 100 120 140
Fig. 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
dV/dt[Rgk] / dV/dt[Rgk = 1k]
10.0
1.0
Rgk(kΩ)
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
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P0102BL
Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values).
dV/dt[Cgk] / dV/dt [Rgk = 1k ]
10
VD = 0.67 x VDRM
Tj = 125°C
Rgk = 1k
8
6
4
2
Cgk(nF)
0
01234567
Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM(A),I 2t(A2s)
100.0
10.0
Tj initial = 25 °C
ITSM
1.0
0.1
0.01
tp(ms)
0.10 1.00
I2t
10.00
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm).
Fig. 8: Surge peak on-state current versus
number of cycles.
ITSM(A)
7
6
5
4
3
2
1
0
1
Number of cycles
10 100
1000
Fig. 10: On-state characteristics (maximum
values).
ITM(A)
1E+1
Tj max.:
Vto = 1.00 V
Rd = 1
1E+0 Tj = Tj max.
1E-1
Tj = 25°C
VTM(V)
1E-2
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Rth(j-a) (°C/W)
500
400
300
200
100
0
0
S (mm2)
10 20 30 40 50 60 70 80 90 100
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P0102BL
PACKAGE MECHANICAL DATA
SOT-23 (Plastic)
E
A
e
B e1 D
S
L
H
A1
c
REF.
A
A1
B
c
D
e
e1
E
H
L
S
DIMENSIONS
Millimeters
Inches
Min.
Max.
0.89
1.4
0 0.1
0.3 0.51
0.085
0.18
2.75
3.04
0.85
1.05
1.7 2.1
1.2 1.6
2.1 2.75
0.6 typ.
0.35
0.65
Min.
Max.
0.035
0.055
0 0.004
0.012
0.02
0.003
0.007
0.108
0.12
0.033
0.041
0.067
0.083
0.047
0.063
0.083
0.108
0.024 typ.
0.014
0.026
FOOTPRINT DIMENSIONS (in millimeters)
SOT-23 (Plastic)
0.9
0.035
0.9
0.035
1.9
0.075
1.45
0.037
0.9
0.035
mm
inch
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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