2N1484.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 2N1484 데이타시트 다운로드

No Preview Available !

2N1483 – 2N1486
Available on
commercial
versions
NPN Silicon Medium Power Transistor
Qualified per MIL-PRF-19500/180
DESCRIPTION
This family of high-frequency, epitaxial planar transistors feature low saturation voltage.
Qualified Levels:
JAN and JANTX
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 2N1483 through 2N1486 series.
JAN and JANTX qualifications are available per MIL-PRF-19500/180.
RoHS compliant versions available (commercial grade only).
TO-8 Package
APPLICATIONS / BENEFITS
General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
Military and other high-reliability applications.
MAXIMUM RATINGS
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +25 °C (1)
@ TC = +25 °C (2)
Operating & Storage Junction Temperature Range
Symbol
V CEO
V CBO
V EBO
IC
PT
TJ, Tstg
Notes: 1. Derate linearly 0.010 mW/°C for TA > +25 °C.
2. Derate linearly 0.143 mW/°C for TC > +25 °C.
2N1483
2N1485
2N1484
2N1486
40 55
60 100
12
3.0
1.75
25
-65 to +200
Unit
V
V
V
A
W
°C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0299, Rev. 1 (7/29/13)
©2013 Microsemi Corporation
Page 1 of 4

No Preview Available !

2N1483 – 2N1486
MECHANICAL and PACKAGING
CASE: Hermetically sealed, kovar base, nickel cap
TERMINALS: Alloy 52 with nickel plating and hot solder dip (Sn63/Pb37) or matte-tin plating for RoHS compliance (available on
commercial grade only).
MARKING: Part number, date code, manufacturer’s ID
POLARITY: See Package Dimensions on last page.
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
PART NOMENCLATURE
JAN 2N1483 (e3)
RoHS Compliance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
Symbol
C obo
I CEO
I CEX
I EBO
h FE
V CEO
V CBO
V EBO
SYMBOLS & DEFINITIONS
Definition
Common-base open-circuit output capacitance.
Collector cutoff current, base open.
Collector cutoff current, circuit between base and emitter.
Emitter cutoff current, collector open.
Common-emitter static forward current transfer ratio.
Collector-emitter voltage, base open.
Collector-emitter voltage, emitter open.
Emitter-base voltage, collector open.
T4-LDS-0299, Rev. 1 (7/29/13)
©2013 Microsemi Corporation
Page 2 of 4

No Preview Available !

2N1483 – 2N1486
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
OFF CHARACTERISTICS
Parameters / Test Conditions
Collector-Emitter Breakdown Current
IC = 100 mA
2N1483, 2N1485
2N1484, 2N1486
Collector-Emitter Cutoff Current
VBE = 1.5 V, IC = 0.25 mA
2N1483, 2N1485
2N1484, 2N1486
Collector-Base Cutoff Current
VCB = 30 V
VCB = 50 V
Emitter-Base Cutoff Current
VEB = 12.0 V
2N1483, 2N1485
2N1484, 2N1486
Symbol
V (BR)CEO
I CEX
I CEO
I EBO
Min.
40
55
60
100
Max.
15.0
15.0
15
ON CHARACTERISTICS (1)
Parameters / Test Conditions
Forward-Current Transfer Ratio
IC = 750 mA, VCE = 4.0 V
2N1483, 2N1484
2N1485, 2N1486
Collector-Emitter Saturation Voltage
IC = 750 A, IB = 75 mA
IC = 750 A, IB = 40 mA
Base-Emitter Voltage
IC = 750 mA, VCE = 4.0 V
2N1483, 2N1484
2N1485, 2N1486
Symbol
h FE
V CE(sat)
V BE
Min.
20
35
Max.
60
100
1.20
0.75
2.0
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Forward Current Transfer Ratio
IC = 5.0 mA, VCB = 28 V
Output Capacitance
VCB = 10 V, IE = 0, 100 kHz f 1.0 MHz
Symbol
f htb
C obo
Min.
600
Max.
400
SWITCHING CHARACTERISTICS
Parameters / Test Conditions (for all symbols)
Turn-On Time
VCC = 12 V, RC = 15.9 Ω,
IBO = IB2 = 35 mA, RB1 = 65 mA
Symbol
ton+ toff
Min.
Max.
25
NOTES: (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.
Unit
V
µA
µA
µA
Unit
V
V
Unit
kHz
pF
Unit
µs
T4-LDS-0299, Rev. 1 (7/29/13)
©2013 Microsemi Corporation
Page 3 of 4

No Preview Available !

PACKAGE DIMENSIONS
2N1483 – 2N1486
Symbol
CD
CH
HD
J
LD
LL
Q
Dimensions
Inch
Millimeters
Min Max Min Max
0.444 0.524 11.28 13.31
0.270 0.330 6.86 8.38
0.550 0.650 13.97 16.51
0.136 0.146 3.45 3.71
0.027 0.033 0.69 0.84
0.360 0.440 9.14 11.18
- 0.115 -
2.92
Note
3, 5
5
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Measured in the zone beyond 0.050 (1.27 mm) from seating plane.
4. The collector shall be internally connected to the case.
5. All three leads.
T4-LDS-0299, Rev. 1 (7/29/13)
©2013 Microsemi Corporation
Page 4 of 4