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® STB60NE03L-12
N - CHANNEL 30V - 0.009 - 60A - D2PAK
"SINGLE FEATURE SIZE" POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB60NE03L-12 30 V <0.012
60 A
s TYPICAL RDS(on) = 0.009
s AVALANCE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
PRELIMINARY DATA
1
D2PAK
TO-263
(Suffix "T4")
3
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTER
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
July 1998
Value
Unit
30 V
30 V
± 20
V
60 A
42 A
240 A
100
0.67
W
W/oC
7 V/ns
-65 to 175
oC
175 oC
(1) ISD 60 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX
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STB60NE3L1-16
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1.5
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 15 V)
Max Value
60
150
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Min.
30
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold
Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS ID = 250 µA
VGS = 10 V ID = 30 A
VGS = 5 V ID = 30 A
Min.
1
Typ.
1.7
Max.
2.5
Unit
V
0.009 0.012
0.018
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
60 A
DYNAMIC
Symbol
gfs ()
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =30 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
20
Typ.
30
Max.
Unit
S
2200
570
200
2800
750
250
pF
pF
pF
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STB60NE3L1-16
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 15 V
RG =4.7
ID = 30 A
VGS = 5 V
Qg Total Gate Charge
VDD = 24 V ID = 60 A VGS = 5 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Min.
Typ.
40
260
Max.
50
320
Unit
ns
ns
35 45 nC
18 nC
13 nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 24 V ID = 60 A
RG =4.7 VGS = 5 V
Min.
Typ.
35
120
175
Max.
50
160
230
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 60 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 60 A
VDD = 24 V
IRRM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
Max.
60
240
Unit
A
A
1.5 V
55 ns
0.1 µC
3.5 Α
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STB60NE3L1-16
DIM.
A
A1
B
B2
C
C2
D
E
G
L
L2
L3
TO-263 (D2PAK) MECHANICAL DATA
MIN.
4.3
2.49
0.7
1.25
0.45
1.21
8.95
10
4.88
15
1.27
1.4
mm
TYP.
MAX.
4.6
2.69
0.93
1.4
0.6
1.36
9.35
10.28
5.28
15.85
1.4
1.75
MIN.
0.169
0.098
0.027
0.049
0.017
0.047
0.352
0.393
0.192
0.590
0.050
0.055
inch
TYP.
E
L2
A
C2
L
L3
MAX.
0.181
0.106
0.036
0.055
0.023
0.053
0.368
0.404
0.208
0.624
0.055
0.068
D
B2 A1
B
C
G
P011P6/C
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STB60NE3L1-16
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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