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Power Transistors
2SB1156
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1707
s Features
q Low collector to emitter saturation voltage VCE(sat)
q Satisfactory linearity of foward current transfer ratio hFE
q Large collector current IC
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
–130
–80
–7
–30
–20
100
3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Unit: mm
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1
hFE2*
hFE3
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
ton
tstg
tf
VCB = –100V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –3A
VCE = –2V, IC = –10A
IC = –8A, IB = – 0.4A
IC = –20A, IB = –2A
IC = –8A, IB = – 0.4A
IC = –20A, IB = –2A
VCE = –10V, IC = – 0.5A, f = 10MHz
IC = –3A, IB1 = – 0.8A, IB2 = 0.8A,
VCC = –50V
–80
45
90
30
–10 µA
–50 µA
V
260
– 0.5
V
–1.5 V
–1.5 V
–2.5 V
25 MHz
0.5 µs
1.2 µs
0.2 µs
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification.
1

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Power Transistors
PC — Ta
200
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
160 (3) Without heat sink
(PC=3W)
120
(1)
80
40
(2)
(3)
0
0 25 50 75 100 125 150
Ambient temperature Ta (˚C)
VCE(sat) — IC
IC/IB=10
–10
–3
–1
– 0.3
– 0.1
TC=100˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.1 – 0.3 –1 –3 –10
Collector current IC (A)
–30
1000
300
100
fT — IC
VCE=–10V
f=10MHz
TC=25˚C
30
10
3
1
0.3
0.1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
IC — VCE
–20
IB=–300mA
TC=25˚C
–16
–200mA
–12 –140mA
–100mA
–8 –80mA
–60mA
–4 –40mA
–20mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SB1156
–10
–3
–1
– 0.3
– 0.1
VCE(sat) — IC
(1) IC/IB=10
(2) IC/IB=20
TC=25˚C
(2)
(1)
– 0.03
– 0.01
– 0.1 – 0.3 –1 –3 –10
Collector current IC (A)
–30
–100
–30
–10
VBE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
100˚C
TC=–25˚C
25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
1000
hFE — IC
VCE=–2V
300 TC=100˚C
25˚C
100
–25˚C
30
10
3
1
– 0.1 – 0.3 –1 –3 –10 –30
Collector current IC (A)
ton, tstg, tf — IC
10
3 tstg
1 ton
0.3 tf
0.1
0.03
0.01
0
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10
(–IB1=IB2)
VCC=–50V
TC=25˚C
–1 –2 –3 –4 –5 –6 –7 –8
Collector current IC (A)
Area of safe operation (ASO)
–100
–30 ICP
IC
–10
Non repetitive pulse
TC=25˚C
t=1ms
10ms
–3 DC
–1
– 0.3
– 0.1
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
2

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Power Transistors
Rth(t) — t
103
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1A (10W) and with a 100 × 100 × 2mm Al heat sink
102
(1)
10 (2)
1
10–1
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2SB1156
3