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STB12NK80Z, STF12NK80Z,
STP12NK80Z, STW12NK80Z
N-channel 800 V, 0.65Ω typ., 10.5 A Zener-protected SuperMESH™
Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247
Datasheet — production data
Features
Type
VDSS
(@Tjmax)
RDS(on)
ID
PW
STB12NK80Z
STF12NK80Z
STP12NK80Z
STW12NK80Z
800V
800V
800V
800V
<0.75Ω 10.5 A 190W
<0.75Ω 10.5 A 40W
<0.75Ω 10.5 A 190W
<0.75Ω 10.5 A 190W
Extremely high dv/dt capability
Improved esd capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing reliability
Applications
Switching applications
TAB
3
1
D2PAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
TO-247
Figure 1. Internal schematic diagram
D(2,TAB)
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Table 1. Device summary
Order codes
Marking
STB12NK80Z
STF12NK80Z
STP12NK80Z
STW12NK80Z
12NK80Z
12NK80Z
12NK80Z
12NK80Z
G(1)
S(3)
AM01476v1
Package
D2PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
August 2012
This is information on a product in full production.
Doc ID 9567 Rev 7
1/22
www.st.com
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Contents
Contents
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22 Doc ID 9567 Rev 7

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STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VDGR
VGS
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20KΩ)
Gate-source voltage
ID Drain current (continuous) at TC = 25°C
ID
IDM(2)
Drain current (continuous) at TC=100°C
Drain current (pulsed)
PTOT
Total dissipation at TC = 25°C
Derating factor
Vesd(G-S) G-S ESD (HBM C= 100pF, R= 1.5kΩ)
VISO
dv/dt(3)
Insulation withstand voltage (DC)
Peak diode recovery voltage slope
TJ Operating junction temperature
Tstg Storage temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD 10.5 A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX
Value
D2PAK
TO-220
TO-247
TO-220FP
800
800
± 30
10.5
10.5(1)
6.6 6.6(1)
42 42(1)
190 40
1.52 0.32
4
-- 2500
4.5
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
kV
V
V
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-a Thermal resistance junction-ambient max
Value
TO-220/
D²PAK
TO-220FP
TO-247
Unit
0.66 3.1
62.5
0.66 °C/W
50 °C/W
Doc ID 9567 Rev 7
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Electrical ratings
STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAS (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj=25°C, Id=Iar, Vdd=50V)
Value
10.5
400
Unit
A
mJ
4/22 Doc ID 9567 Rev 7

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STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z
2 Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified).
Table 5. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
IDSS
IGSS
VGS(th)
RDS(on)
Peak diode recovery
voltage slope
VDS = 800 V,
VDS =800 V, Tc=125°C
Gate body leakage current
(VGS = 0)
VGS = ± 20V
Gate threshold voltage
VDS= VGS, ID = 100µA
Static drain-source on-
resistance
VGS= 10V, ID = 5.25A
Min. Typ. Max. Unit
800 V
1 µA
50 µA
±10 µA
3 3.75 4.5
V
0.65 0.75 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Ciss
Coss
Crss
Forward transconductance VDS =15V, ID = 5.25A
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
-
-
12
2620
250
53
-
-
S
pF
pF
pF
Cosseq(2)
Equivalent output
capacitance
VGS=0, VDS =0V to 640V
- 100 -
pF
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
tr(Voff)
tf
tc
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Off voltage rise time
Fall time
Cross-over time
VDD=640V, ID = 10.5A
VGS =10V
(see Figure 21)
VDD=400 V, ID= 5.25A,
RG=4.7Ω, VGS=10V
(see Figure 22)
VDD=640 V, ID= 10.5A,
RG=4.7Ω, VGS=10V
(see Figure 22)
87 nC
- 14 - nC
44 nC
30 ns
18 ns
--
70 ns
20 ns
16 ns
- 15 - ns
28 ns
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Doc ID 9567 Rev 7
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