FZ1200R17KF6CB2.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 FZ1200R17KF6CB2 데이타시트 다운로드

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 17 KF6C B2
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Tvj = 25°C
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
TC = 80 °C
TC = 25 °C
tP = 1 ms, TC = 80°C
vorläufige Daten
preliminary data
VCES
IC,nom.
IC
ICRM
1700
1200
1950
2400
V
A
A
A
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Ptot 9,6 kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
VGES
+/- 20V
V
Dauergleichstrom
DC forward current
IF
1200
A
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I2t - value, Diode
Isolations-Prüfspannung
insulation test voltage
tp = 1 ms
VR = 0V, tp = 10ms, TVj = 125°C
RMS, f = 50 Hz, t = 1 min.
IFRM
I2t
VISOL
2400
380
4
A
kA2s
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
IC = 1200A, V GE = 15V, Tvj = 25°C
IC = 1200A, V GE = 15V, Tvj = 125°C
IC = 80mA, VCE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V ... +15V
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
VCE = 1700V, V GE = 0V, Tvj = 25°C
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE = 20V, Tvj = 25°C
prepared by: A. Wiesenthal
approved by: Christoph Lübke; 12.04.2001
date of publication: 05.04.2001
revision: 1 (preliminary)
VCE sat
min.
typ.
2,6
3,1
max.
3,1
3,6
V
V
VGE(th)
4,5
5,5
6,5
V
QG
14,5
µC
Cies 79 nF
Cres
ICES
4 nF
5 mA
IGES 400 nA
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FZ1200R17KF6CB2_V.xls

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 17 KF6C B2
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
IC = 1200A, V CE = 900V
VGE = ±15V, RG = 1,2W, Tvj = 25°C
VGE = ±15V, RG = 1,2W, Tvj = 125°C
IC = 1200A, V CE = 900V
VGE = ±15V, RG = 1,2W, Tvj = 25°C
VGE = ±15V, RG = 1,2W, Tvj = 125°C
IC = 1200A, V CE = 900V
VGE = ±15V, RG = 1,2W, Tvj = 25°C
VGE = ±15V, RG = 1,2W, Tvj = 125°C
IC = 1200A, V CE = 900V
VGE = ±15V, RG = 1,2W, Tvj = 25°C
VGE = ±15V, RG = 1,2W, Tvj = 125°C
IC = 1200A, V CE = 900V, VGE = 15V
RG = 1,2W, Tvj = 125°C, LS = 50nH
IC = 1200A, V CE = 900V, VGE = 15V
RG = 1,2W, Tvj = 125°C, LS = 50nH
tP £ 10µsec, VGE £ 15V
TVj£125°C, VCC=1000V, VCEmax=VCES -LsCE ·dI/dt
Modulinduktivität
stray inductance module
vorläufige Daten
preliminary data
min. typ. max.
td,on 0,3 µs
0,3 µs
tr
0,16
µs
0,16
µs
td,off 1,1 µs
1,1 µs
tf
0,13
µs
0,14
µs
Eon
Eoff
ISC
LsCE
330
480
4800
12
mWs
mWs
A
nH
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
pro Zweig / per arm
RCC´+EE´
0,08
mW
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
IF = 1200A, V GE = 0V, Tvj = 25°C
IF = 1200A, V GE = 0V, Tvj = 125°C
IF = 1200A, - diF/dt = 7200A/µsec
VR = 900V, VGE = -10V, T vj = 25°C
VR = 900V, VGE = -10V, T vj = 125°C
IF = 1200A, - diF/dt = 7200A/µsec
VR = 900V, VGE = -10V, T vj = 25°C
VR = 900V, VGE = -10V, T vj = 125°C
IF = 1200A, - diF/dt = 7200A/µsec
VR = 900V, VGE = -10V, T vj = 25°C
VR = 900V, VGE = -10V, T vj = 125°C
min. typ. max.
VF
2,1 2,5
V
2,1 2,5
V
IRM 970 A
1130
A
Qr 200 µAs
380 µAs
Erec 110 mWs
210 mWs
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FZ1200R17KF6CB2_V.xls

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 17 KF6C B2
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Transistor / transistor, DC
Diode/Diode, DC
pro Modul / per module
lPaste = 1 W/m*K / lgrease = 1 W/m*K
vorläufige Daten
preliminary data
RthJC
min.
typ.
max.
0,013
0,025
K/W
K/W
RthCK
0,008
K/W
Tvj 150 °C
Betriebstemperatur
operation temperature
Tvj op
-40
125 °C
Lagertemperatur
storage temperature
Tstg -40
125 °C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
Kriechstrecke
creepage distance
Luftstrecke
clearance
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Gewicht
weight
terminals M4
terminals M8
AlN
17 mm
10 mm
275
M1 5 Nm
M2 2 Nm
8 - 10 Nm
G
1050
g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
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FZ1200R17KF6CB2_V.xls

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 17 KF6C B2
Ausgangskennlinie (typisch)
Output characteristic (typical)
IC = f (VCE)
VGE = 15V
vorläufige Daten
preliminary data
2400
2200
2000
1800
1600
1400
1200
1000
800
Tvj = 25°C
Tvj = 125°C
600
400
200
0
0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V]
Ausgangskennlinienfeld (typisch)
Output characteristic (typical)
IC = f (VCE)
Tvj = 125°C
2400
2200
2000
1800
1600
1400
VGE = 20V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
1200
1000
800
600
400
200
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V]
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 17 KF6C B2
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
IC = f (VGE)
VCE = 20V
vorläufige Daten
preliminary data
2400
2200
2000
1800
Tj = 25°C
Tj = 125°C
1600
1400
1200
1000
800
600
400
200
0
5 6 7 8 9 10 11 12 13
VGE [V]
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0,0
Tvj = 25°C
Tvj = 125°C
0,5 1,0 1,5
2,0
VF [V]
IF = f (VF)
2,5 3,0
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FZ1200R17KF6CB2_V.xls