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SIPMOS® Small-Signal Transistor
q VDS 250 V
q ID
0.07 A
q RDS(on) 100
q N channel
q Depletion mode
q High dynamic resistance
q Available grouped in VGS(th)
BSS 229
1 23
Type
Ordering
Code
Tape and Reel
Information
BSS 229 Q62702-S600 E6296: 1500 pcs/reel;
2 reels/carton; source first
Pin Configuration Marking Package
123
GDS
SS229 TO-92
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage, RGS = 20 k
Gate-source voltage
Gate-source peak voltage, aperiodic
Continuous drain current, TA = 25 ˚C
Pulsed drain current,
TA = 25 ˚C
Max. power dissipation, TA = 25 ˚C
Operating and storage temperature range
Symbol
VDS
VDGR
VGS
Vgs
ID
ID puls
Ptot
Tj, Tstg
Values
250
250
± 14
± 20
0.07
0.21
0.63
– 55 … + 150
Unit
V
A
W
˚C
Thermal resistance, chip-ambient
(without heat sink)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
RthJA
200
E
55/150/56
K/W
Semiconductor Group
1
04.97

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BSS 229
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
Values
typ. max.
Unit
Static Characteristics
Drain-source breakdown voltage
VGS = 3 V, ID = 0.25 mA
Gate threshold voltage
VDS = 3 V, ID = 1 mA
Drain-source cutoff current
VDS = 250 V, VGS = 3 V
Tj = 25 ˚C
Tj = 125 ˚C
Gate-source leakage current
VGS = 20 V, VDS = 0
Drain-source on-resistance
VGS = 0 V, ID = 0.014 A
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
Dynamic Characteristics
Forward transconductance
VDS 2 × ID × R ,DS(on)max ID = 0.07 A
Input capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0, VDS = 25 V, f = 1 MHz
Turn-on time ton, (ton = td(on) + tr)
VDD = 30 V, VGS = 2 V ... + 5 V, RGS = 50 ,
ID = 0.15 A
Turn-off time toff, (toff = td(off) + tf)
VDD = 30 V, VGS = 2 V ... + 5 V, RGS = 50 ,
ID = 0.15 A
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
250
1.8
0.05
1.4
10
75
0.10
85
6
2
4
10
10
15
0.7
100
200
100
100
120
10
3
6
15
13
20
V
nA
µA
nA
S
pF
ns
Semiconductor Group
2

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BSS 229
Electrical Characteristics (cont’d)
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Reverse Diode
Continuous reverse drain current
TA = 25 ˚C
Pulsed reverse drain current
TA = 25 ˚C
Diode forward on-voltage
IF = 0.14 A, VGS = 0
Symbol
min.
IS
ISM
VSD
Values
typ. max.
Unit
A
– 0.07
– 0.21
V
0.8 1.2
VGS(th) Grouping
Symbol Limit Values
min. max.
Unit Test Condition
Range of VGS(th)
Threshold voltage selected in groups: 1)
F
G
A
B
C
D
VGS(th)
VGS(th)
– 0.15 V
– 1.535
– 1.635
– 1.735
– 1.835
– 1.935
– 2.035
– 1.385
– 1.485
– 1.585
– 1.685
– 1.785
– 1.885
V
V
V
V
V
V
VDS1 = 0.2 V;
VDS2 = 3 V;
ID = 10 µA
1) A specific group cannot be ordered separately.
Each reel only contains transistors from one group.
Semiconductor Group
3

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BSS 229
Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Total power dissipation Ptot = f (TA)
Safe operating area ID = f (VDS)
parameter: D = 0.01, TC = 25 ˚C
Typ. output characteristics ID = f (VDS)
parameter: tp = 80 µs
Typ. drain-source on-resistance
RDS(on) = f (ID)
parameter: VGS
Semiconductor Group
4

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BSS 229
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs, VDS 2 × ID × RDS(on)max.
Typ. forward transconductance gfs = f (ID)
parameter: VDS 2 × ID × R ,DS(on)max. tp = 80 µs
Drain-source on-resistance
RDS(on) = f (Tj)
parameter: ID = 0.014 A, VGS = 0 V, (spread)
Typ. capacitances C = f (VDS)
parameter: VGS = 0, f = 1 MHz
Semiconductor Group
5