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Advanced Power MOSFET
SSP3N80A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 µA (Max.) @ VDS = 800V
Low RDS(ON) : 3.800 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current
O1
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8“from case for 5-seconds
Thermal Resistance
Symbol
R θJC
R θCS
R θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
BVDSS = 800 V
RDS(on) = 4.8
ID = 3 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
800
3
1.9
12
+_ 30
240
3
10
2.0
100
0.8
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ΟC
ΟC
Typ.
--
0.5
--
Max.
1.25
--
62.5
Units
ΟC/W
Rev. B
©1999 Fairchild Semiconductor Corporation

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SSP3N80A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25ΟC unless otherwise specified)
Symbol
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
800 -- -- V
-- 1.01 -- V/ΟC
2.0 -- 3.5 V
-- -- 100 nA
-- -- -100
-- -- 25
-- -- 250 µA
VGS=0V,ID=250µA
ID=250µA See Fig 7
VDS=5V,ID=250µA
VGS=30V
VGS=-30V
VDS=800V
VDS=640V,TC=125ΟC
Static Drain-Source
On-State Resistance
-- -- 4.8 VGS=10V,ID=0.85A O4 *
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 2.17 -- VDS=50V,ID=0.85A O4
-- 580 750
--
60
75
VGS=0V,VDS=25V,f =1MHz
pF
See Fig 5
-- 23 30
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 16 40
-- 26 60
VDD=400V,ID=2A,
-- 46 100 ns RG=16
-- 24 60
See Fig 13 O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-- 27 35
-- 5.3 --
-- 12.2 --
VDS=640V,VGS=10V,
nC ID=2A
O4 O5
See Fig 6 & Fig 12
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 3
-- 12
Integral reverse pn-diode
A
in the MOSFET
O4 -- -- 1.4 V TJ=25 ΟC,IS=3A,VGS=0V
-- 330 -- ns TJ=25 ΟC,IF=3A
-- 1.52 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=50mH, IAS=3A, VDD=50V, RG=27, Starting TJ =25 ΟC
O3 ISD<_ 3A, di/dt <_100A/ µs, VDD <_BVDSS , Starting TJ =25 ΟC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature

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N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
101 VGS
Top : 15V
10V
8.0 V
7.0 V
6.0 V
100
5.5 V
5.0 V
Bottom : 4.5 V
10-1
10-2
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
20
15
VGS = 10 V
10
5 VGS = 20 V
@ Note : TJ = 25 oC
0
0 3 6 9 12
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
1000
800
C = C + C ( C = shorted )
iss gs gd ds
Coss= Cds+ Cgd
Crss= Cgd
C iss
600
400
C
oss
200
C rss
@ Notes :
1. V = 0 V
GS
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
SSP3N80A
Fig 2. Transfer Characteristics
101
100
10-1
2
150 oC
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. V = 50 V
DS
3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
10-1
10-2
0.2
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
0.4 0.6 0.8 1.0
VSD , Source-Drain Voltage [V]
1.2
Fig 6. Gate Charge vs. Gate-Source Voltage
V = 160 V
DS
10
VDS = 400 V
VDS = 640 V
5
@ Notes : I = 3.0 A
D
0
0 5 10 15 20 25 30
QG , Total Gate Charge [nC]