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Advanced Power MOSFET
SSP3N80A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 µA (Max.) @ VDS = 800V
Low RDS(ON) : 3.800 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current
O1
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8“from case for 5-seconds
Thermal Resistance
Symbol
R θJC
R θCS
R θJA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
BVDSS = 800 V
RDS(on) = 4.8
ID = 3 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Value
800
3
1.9
12
+_ 30
240
3
10
2.0
100
0.8
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ΟC
ΟC
Typ.
--
0.5
--
Max.
1.25
--
62.5
Units
ΟC/W
Rev. B
©1999 Fairchild Semiconductor Corporation

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SSP3N80A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25ΟC unless otherwise specified)
Symbol
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
800 -- -- V
-- 1.01 -- V/ΟC
2.0 -- 3.5 V
-- -- 100 nA
-- -- -100
-- -- 25
-- -- 250 µA
VGS=0V,ID=250µA
ID=250µA See Fig 7
VDS=5V,ID=250µA
VGS=30V
VGS=-30V
VDS=800V
VDS=640V,TC=125ΟC
Static Drain-Source
On-State Resistance
-- -- 4.8 VGS=10V,ID=0.85A O4 *
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 2.17 -- VDS=50V,ID=0.85A O4
-- 580 750
--
60
75
VGS=0V,VDS=25V,f =1MHz
pF
See Fig 5
-- 23 30
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 16 40
-- 26 60
VDD=400V,ID=2A,
-- 46 100 ns RG=16
-- 24 60
See Fig 13 O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-- 27 35
-- 5.3 --
-- 12.2 --
VDS=640V,VGS=10V,
nC ID=2A
O4 O5
See Fig 6 & Fig 12
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 3
-- 12
Integral reverse pn-diode
A
in the MOSFET
O4 -- -- 1.4 V TJ=25 ΟC,IS=3A,VGS=0V
-- 330 -- ns TJ=25 ΟC,IF=3A
-- 1.52 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=50mH, IAS=3A, VDD=50V, RG=27, Starting TJ =25 ΟC
O3 ISD<_ 3A, di/dt <_100A/ µs, VDD <_BVDSS , Starting TJ =25 ΟC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature

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N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
101 VGS
Top : 15V
10V
8.0 V
7.0 V
6.0 V
100
5.5 V
5.0 V
Bottom : 4.5 V
10-1
10-2
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
20
15
VGS = 10 V
10
5 VGS = 20 V
@ Note : TJ = 25 oC
0
0 3 6 9 12
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
1000
800
C = C + C ( C = shorted )
iss gs gd ds
Coss= Cds+ Cgd
Crss= Cgd
C iss
600
400
C
oss
200
C rss
@ Notes :
1. V = 0 V
GS
2. f = 1 MHz
0
100 101
VDS , Drain-Source Voltage [V]
SSP3N80A
Fig 2. Transfer Characteristics
101
100
10-1
2
150 oC
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. V = 50 V
DS
3. 250 µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
10-1
10-2
0.2
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
0.4 0.6 0.8 1.0
VSD , Source-Drain Voltage [V]
1.2
Fig 6. Gate Charge vs. Gate-Source Voltage
V = 160 V
DS
10
VDS = 400 V
VDS = 640 V
5
@ Notes : I = 3.0 A
D
0
0 5 10 15 20 25 30
QG , Total Gate Charge [nC]

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SSP3N80A
1.2 Fig 7. Breakdown Voltage vs. Temperature
1.1
1.0
0.9 @ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [ oC]
N-CHANNEL
POWER MOSFET
3.0 Fig 8. On-Resistance vs. Temperature
2.5
2.0
1.5
1.0
@ Notes :
0.5 1. VGS = 10 V
2. ID = 1.5 A
0.0
-75 -50 -25 0
25 50 75 100 125 150 175
TJ , Junction Temperature [ oC]
102 Fig 9. Max. Safe Operating Area
Operation in This Area
is Limited by RDS(on)
101 10 µs
100 µs
1 ms
100
10 ms
DC
10-1
@ Notes :
1. TC = 25 oC
2. T = 150 oC
J
3. Single Pulse
10-2
101 102 103
VDS , Drain-Source Voltage [V]
F4ig 10. Max. Drain Current vs. Case Temperature
3
2
1
0
25 50 75 100 125 150
Tc , Case Temperature [ oC]
Fig 11. Thermal Response
100
D=0.5
0.2
0.1
10- 1 0.05
0.02
0.01
10- 2
10- 5
@ Notes :
1. Zθ J C(t)=1.25 o C/W Max.
2. Duty Factor, D=t /t
12
3. TJ M -TC =PD M*Zθ J C (t)
single pulse
PDM
t1
t2
10- 4
10- 3
10- 2
10- 1
100
t1 , Square Wave Pulse Duration [sec]
101

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N-CHANNEL
POWER MOSFET
SSP3N80A
Fig 12. Gate Charge Test Circuit & Waveform
* Current Regulator *
50K¥Ø
12V 200nF
300nF
VGS
Same Type
as DUT
VGS
10V
VDS
Qgs
DUT
3mA
R1 R2
Current Sampling (I G) Current Sampling (I D)
Resistor
Resistor
Qg
Qgd
Charge
10V
Vout
Vin
RG
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDD
( 0.5 rated VDS )
Vout
90%
DUT
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
Vary tp to obtain
required peak ID
VDS
LL
ID
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
10V
RG
tp
DUT
C
VDD
VDD
ID (t)
tp
VDS (t)
Time