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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF316/D
The RF Line
NPN Silicon
RF Power Transistor
MRF316
. . . designed primarily for wideband large–signal output amplifier stages in the
30 – 200 MHz frequency range.
Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 80 Watts
Minimum Gain = 10 dB
Built–In Matching Network for Broadband Operation
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Gold Metallization System for High Reliability Applications
80 W, 3.0 – 200 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Collector Current — Peak
VCEO
VCBO
VEBO
IC
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
PD
Storage Temperature Range
THERMAL CHARACTERISTICS
Tstg
Characteristic
Thermal Resistance, Junction to Case
Value
35
65
4.0
9.0
13.5
220
1.26
– 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Symbol
RθJC
CASE 316–01, STYLE 1
Max Unit
0.8 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
V(BR)CEO
35
— Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
65
— Vdc
Collector–Base Breakdown Voltage
(IC = 50 mAdc, IE = 0)
V(BR)CBO
65
— Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
— Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
5.0 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 Adc, VCE = 5.0 Vdc)
hFE 10 — 80 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cob — 100 130 pF
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
REV 7
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF316
1

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ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max Unit
NARROW BAND FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, Pout = 80 W, f = 150 MHz)
GPE
10
13
dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 80 W, f = 150 MHz)
η 55 — — %
Load Mismatch
(VCC = 28 Vdc, Pout = 80 W CW, f = 150 MHz,
VSWR = 30:1 all phase angles)
ψ
No Degradation in Output Power
RFC5
DUT
C1 L1
RF
INPUT
C2 C3
C4
C5 C6
RFC1
RFC2
RFC3
C7 R1
R2
R3
RFC6
L2
RFC4
C8
+ 28 Vdc
C13
C12
RF
OUTPUT
C9 C10 C11
C1 — 22 pF 100 mil ATC
C2, C3 — 24 pF 100 mil ATC
C4, C11 — 0.8 – 20 pF JMC #5501 Johanson
C5 — 200 pF 100 mil ATC
C6 — 240 pF 100 mil ATC
C7 — Dipped Mica 1000 pF
C8 — 0.1 µF Erie Red Cap
C9, C10, C12 — 30 pF 100 mil ATC
C13 — 1.0 µF Tantalum
L1 — 0.8, #20 Wire
L2 — 1.0, #20 Wire
RFC1, RFC4 — 0.15 µH Molded Coil
RFC2, RFC3 — Ferroxcube Bead 56–590–65–3B
RFC5 — 2.5, #20 Wire, 1.5 Turns
RFC6 — Ferroxcube VK200–19/4B
R1 — 10 , 1/2 W
R2, R3 — 10 , 1.0 W
Figure 1. 150 MHz Test Amplifier
MRF316
2
MOTOROLA RF DEVICE DATA

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TYPICAL PERFORMANCE CURVES
140
VCC = 28 V
120
100 f = 30 MHz
80
60
50 MHz
40
100 MHz
150 MHz
200 MHz
20
0
0.2 0.3 0.4 0.5 0.7 1
2 3 4 5 7 10
Pin, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
26
Pout = 80 W
VCC = 28 V
22
18
14
10
6
20 60 100 140 180 220
f, FREQUENCY (MHz)
Figure 3. Power Gain versus Frequency
130
Pin = 8 W
6W
110
4W
90
70 2 W
50
30
12
f = 100 MHz
16 20
24
VCC, SUPPLY VOLTAGE (VOLTS)
28
Figure 4. Output Power versus Supply Voltage
120
Pin = 8 W
6W
100
4W
80
2W
60
40
20
12
f = 150 MHz
16 20 24
VCC, SUPPLY VOLTAGE (VOLTS)
28
Figure 5. Output Power versus Supply Voltage
110
Pin = 8 W
90 6 W
4W
70
2W
50
30
10
12
f = 200 MHz
16 20 24
VCC, SUPPLY VOLTAGE (VOLTS)
28
Figure 6. Output Power versus Supply Voltage
MOTOROLA RF DEVICE DATA
MRF316
3

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2.0
3.0
0
1.0
Zin 100
1.0
1.0
200
125
2.0
150
3.0
4.0 50
f = 30 MHz
175
2.0
200 175
150
3.0
125
VCC = 28 V, Pout = 80 W
100 4.0 f Zin ZOL*
MHz OHMS
OHMS
ZOL*
5.0 30
1.2 – j2.4
5.5 – j6.8
50 1.1 – j2.2 4.5 – j6.0
6.0 100
0.3 + j0.7
2.7 – j3.5
50
f = 30 MHz
125
7.0 150
8.0 175
200
9.0
0.6 + j1.2
0.9 + j1.6
2.2 + j0.3
0.3 + j0.8
2.3 – j2.6
2.0 – j1.7
1.9 – j1.3
2.0 – j0.9
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage
and frequency.
Figure 7. Series Equivalent Input–Output Impedance
MRF316
4
MOTOROLA RF DEVICE DATA

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PACKAGE DIMENSIONS
D
R
F
4
3
K
Q
J
E
1
2
L
B
H
A
C
N
U
CASE 316–01
ISSUE D
NOTES:
1. FLANGE IS ISOLATED IN ALL STYLES.
INCHES
DIM MIN MAX
A 24.38 25.14
B 12.45 12.95
C 5.97 7.62
D 5.33 5.58
E 2.16 3.04
F 5.08 5.33
H 18.29 18.54
J 0.10 0.15
K 10.29 11.17
L 3.81 4.06
N 3.81 4.31
Q 2.92 3.30
R 3.05 3.30
U 11.94 12.57
MILLIMETERS
MIN MAX
0.960 0.990
0.490 0.510
0.235 0.300
0.210 0.220
0.085 0.120
0.200 0.210
0.720 0.730
0.004 0.006
0.405 0.440
0.150 0.160
0.150 0.170
0.115 0.130
0.120 0.130
0.470 0.495
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. EMITTER
4. BASE
MOTOROLA RF DEVICE DATA
MRF316
5