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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA2756GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The µ PA2756GR is Dual N-channel MOS Field Effect
Transistor designed for switching applications.
FEATURES
Low on-state resistance
RDS(on)1 = 105 mMAX. (VGS = 10 V, ID = 2.0 A)
RDS(on)2 = 150 mMAX. (VGS = 4.0 V, ID = 2.0 A)
Low Ciss: Ciss = 260 pF TYP.
Built-in G-S protection diode against ESD
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
µ PA2756GR
PACKAGE
Power SOP8
PACKAGE DRAWING (Unit: mm)
85
14
5.37 MAX.
1 : Source 1
2 : Gate 1
7, 8: Drain 1
3 : Source 2
4 : Gate 2
5, 6: Drain 2
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Note1
Drain Current (pulse) Note2
Total Power Dissipation (1 unit) Note1
Total Power Dissipation (2 units) Note1
VGSS
ID(DC)
ID(pulse)
PT1
PT2
±20
±4.0
±16
1.6
2.0
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Repetitive Avalanche Energy Note4
Tstg 55 to +150
IAS 4.0
EAS 1.6
EAR 1.6
V
V
A
A
W
W
°C
°C
A
mJ
mJ
EQUIVALENT CIRCUIT
Drain 1
Drain 2
Gate 1
Body
Diode Gate 2
Body
Diode
Gate
Protection Source 1
Diode
Gate
Protection Source 2
Diode
Notes 1. Mounted on ceramic substrate of 2000 mm2 x 2.2 mm
2. PW 10 µs, Duty Cycle 1%
3. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 0 V
4. IAR 4.0 A, Tch 150°C
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17407EJ1V0DS00 (1st edition)
Date Published January 2005 NS CP(K)
Printed in Japan
2005

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µ PA2756GR
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 60 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±18 V, VDS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)1
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 2.0 A
VGS = 10 V, ID = 2.0 A
RDS(on)2 VGS = 4.0 V, ID = 2.0 A
Input Capacitance
Ciss VDS = 10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 2.0 A
Rise Time
tr VGS = 10 V
Turn-off Delay Time
td(off)
RG = 10
Fall Time
tf
Total Gate Charge
QG VDD = 48 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 4.0 A
IF = 4.0 A, VGS = 0 V
Reverse Recovery Time
trr IF = 4.0 A, VGS = 0 V
Reverse Recovery Charge
Qrr di/dt = 100 A/µs
Note Pulsed
MIN.
1.5
2.0
TYP.
2.0
85
106
260
65
20
14
5
80
30
6
1
1.5
0.9
24
22
MAX.
10
±10
2.5
105
150
UNIT
µA
µA
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG. RG
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet G17407EJ1V0DS

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µ PA2756GR
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - °C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.8
2.4
2 units
2
1 unit
1.6
Mounted on ceramic
substrate of
2000 mm2 x 2.2 mm
1.2
0.8
0.4
0
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
ID(pulse)
10
ID(DC)
PW = 100 µs
1 ms
1
RDS(on) Limited
(at VGS = 10 V)
0.1
0.01
Power Dissipation Limited
Single pulse, 1unit
TA = 25°C
Mounted on ceramic substrate
of 2000 mm2 x 2.2 mm
0.01 0.1
1
10 ms
100 ms
10
VDS - Drain to Source Voltage - V
100
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 78.1°C/W
10
1
0.1
100 µ
1m
Single pulse, 1unit
TA = 25°C
Mounted on ceramic substrate of 2000 mm2 x 2.2 mm
10 m
100 m
1
PW - Pulse Width - s
10
100 1000
Data Sheet G17407EJ1V0DS
3

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DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
20
Pulsed
15
10 VGS = 10 V
5 4.0 V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3
VDS = 10 V
2.5 ID = 1 mA
2
1.5
1
0.5
0
-50 -25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
200
Pulsed
180
160
140
120 VGS = 4.0 V
100
80
60
0.1
10 V
1 10
ID - Drain Current – A
100
µ PA2756GR
FORWARD TRANSFER CHARACTERISTICS
100
10
1
0.1
0.01
VDS = 10 V
Pulsed
TA = 40°C
25°C
75°C
125°C
150°C
0.001
0.0001
0
1234
VGS - Gate to Source Voltage - V
5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
VDS = 10 V
Pulsed
1 TA = 40°C
25°C
75°C
125°C
150°C
0.1
0.01
0.01
0.1 1 10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
Pulsed
180
160
ID = 4.0 A
140 2.0 A
0.8 A
120
100
80
60
0 1 2 3 4 5 6 7 8 9 10 11 12
VGS - Gate to Source Voltage - V
4 Data Sheet G17407EJ1V0DS

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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
200
180 ID = 2.0 A
Pulsed
160
140 VGS = 4.0 V
120
100
80 10 V
60
40
20
0
-50 -25 0 25 50 75 100 125 150 175
Tch - Channel Temperature - °C
1000
100
10
SWITCHING CHARACTERISTICS
VDD = 30 V
VGS = 10 V
RG = 10
td(off)
tf
td(on)
tr
1
0.1
1 10
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10 VGS = 10 V
4.0 V
1
0V
100
0.1
0.01
0
0.5 1
VF(S-D) - Source to Drain Voltage - V
1.5
µ PA2756GR
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
Ciss
100
Coss
10
Crss
VGS = 0 V
f = 1 MHz
1
0.1
1
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60 12
ID = 4.0 A
50 VDD = 48 V
30 V
10
40
12 V
8
30 6
20
VGS
4
10
0
0
VDS
12345
QG - Gate Charge - nC
6
2
0
7
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
VGS = 0 V
di/dt = 100 A/µs
100
10
1
0.1
1 10
IF - Diode Forward Current - A
100
Data Sheet G17407EJ1V0DS
5