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April 1, 2003

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2SA2080
Silicon PNP Epitaxial
Features
Low frequency amplifier
Outline
CMPAK
3
1
2
ADE-208-1476 (Z)
Rev. 0
Feb. 2002
1. Emitter
2. Base
3. Collector

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2SA2080
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
V
CBO
V
CEO
VEBO
IC
I
E
P*
C
Tj
–30
–30
–5
–100
100
150
150
Storage temperature
Tstg –55 to +125
*Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm)
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max
Collector to base breakdown
voltage
V
(BR)CBO
–30
Collector to emitter breakdown V(BR)CEO
voltage
–30
Emitter to base breakdown
voltage
V(BR)EBO
–5
Collector cutoff current
I
CBO

Emitter cutoff current
I
EBO

DC current transfer ratio
h *1
FE
100
Collector to emitter saturation
voltage
VCE(sat)
–0.5
–0.5
500
–0.2
Base to emitter voltage
V
BE

Notes: 1. The 2SA2080 is grouped by h as follows.
FE
Grade
B
C
D
–0.75
Mark
MB
MC
MD
hFE
100 to 200
160 to 320
250 to 500
Unit
V
V
V
µA
µA
V
V
Test conditions
I
C
=
–10
µA,
I
E
=
0
IC = –1 mA, RBE =
IE = –10 µA, IC = 0
V = –20 V, I = 0
CB E
V = –2 V, I = 0
EB C
V = –12 V, I = –2 mA
CE C
IC = –10 mA, IB = –1 mA
V = –12 V, I = –2 mA
CE C
Rev.0, Feb. 2002, page 2 of 6

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Maximum Collector Dissipation Curve
150
100
50
*Value on the glass epoxy board
(10 mm x 10 mm x 0.7 mm)
0 50 100
150
Ambient Temperature Ta (°C)
2SA2080
Typical Output Characteristics (1)
10
25
8
20
6 15
4 10
2 5 µA
IB = 0
0 0.2 0.4 0.6 0.8 1.0
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics (2)
10
Pulse test
25
20
8
15
6
10
4
5 µA
2
IB = 0
0 5 10 15 20 25
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
5
VCE = 5 V
4
3
Ta = 75°C
25
2
1
0 0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
Rev.0, Feb. 2002, page 3 of 6