SUR510EF.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 SUR510EF 데이타시트 다운로드

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Semiconductor
SUR510EF
Epitaxial Planar Type NPN Silicon Transistor
Description
Digital transistor
Features
Two SRC1204 chips in SOT-563F package
With built-in bias resistors
Ordering Information
Type NO.
Marking
SUR510EF
9X
Package Code
SOT - 563F
Outline Dimensions
unit : mm
KST-J007-000
3 21
R1 R2 R2
Tr2
R1
Tr1
4 56
R1 R2
Tr1 47K47K
Tr2
47K
47K
PIN Connections
1. Emitter 1
2. Emitter 2
3. Base 2
4. Collector 2
5. Base 1
6. Collector 1
1

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Absolute maximum ratings [Tr1,Tr2 : NPN]
Characteristic
Symbol
Out Voltage
VO
Input Voltage
VI
Out Current
IO
Power Dissipation
PD
Junction Temperature
TJ
Storage Temperature
TSTG
SUR510EF
Ratings
50
40
100
100
150
-55 ~ 150
(Ta=25° C)
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics [Tr1,Tr2 : NPN]
Characteristic
Symbol
Test Condition
Output Cut-off Current
DC Current Gain
IO(OFF)
GI
VO=50V, VI=0
VO=5V, IO=10mA
Output Voltage
VO(ON) IO=10mA, II=0.5mA
Input Voltage (ON)
VI(ON) VO=0.2V, IO=5mA
Input Voltage (OFF)
Transition Frequency
Input Current
VI(OFF)
fT*
II
VO=5V, IO=0.1mA
VO=10V, IO=5mA
VI=5V
* : Characteristic of Transistor Only
Min.
-
80
-
-
1.0
-
-
Typ.
-
200
0.1
2.8
1.2
200
-
(Ta=25° C)
Max. Unit
500 nA
--
0.3 V
5.0 V
-V
- MHz
0.18
mA
KST-J007-000
2

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Electrical Characteristic Curves
[Tr1, Tr2 : NPN]
Fig. 1 IO - VI(ON)
SUR510EF
Fig. 2 IO - VI(OFF)
Fig. 3 GI - IO
KST-J007-000
3