STGP20NB37LZ.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 STGP20NB37LZ 데이타시트 다운로드

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® STGP20NB37LZ
N-CHANNEL CLAMPED 20A TO-220
INTERNALLY CLAMPED PowerMESHIGBT
TYPE
V CES
VCE(s at)
IC
STGP20NB37LZ CLAMPED < 2.0 V 20 A
s POLYSILICON GATE VOLTAGE DRIVEN
s LOW THRESHOLD VOLTAGE
s LOW ON-VOLTAGE DROP
s HIGH CURRENT CAPABILITY
s HIGH VOLTAGE CLAMPING FEATURE
PRELIMINARY DATA
DESCRIPTION
Using the latest high voltage technology based
on patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs with
outstanding performances.
The built in collector-gate zener exhibits a very
precise active clamping while the gate-emitter
zener supplies an ESD protection.
3
2
1
TO-220
APPLICATIONS
s AUTOMOTIVE IGNITION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VCES Collect or-Emitter Voltage (VGS = 0)
VECR
VGE
IC
IC
ICM()
E AS
Ptot
Reverse Battery Protection
Gate-Emitter Voltage
Collect or Current (continuous) at Tc = 25 oC
Collect or Current (continuous) at Tc = 100 oC
Collector Current (pulsed)
Single Pulse Energy Tc = 25 oC
Total Dissipation at Tc = 25 oC
Derating Factor
ESD ESD (Human Body Model)
Tstg Storage Temperature
Tj Max. O perating Junction Temperature
() Pulse width limited by safe operating area
April 2000
Value
CLA M PE D
20
CLA M PE D
40
30
80
700
150
1
4
-65 to 175
175
Un it
V
V
V
A
A
A
mJ
W
W /o C
KV
oC
oC
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STGP20NB37LZ
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Max
Max
Typ
1
62.5
0. 2
oC/W
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified)
OFF
Symbo l
BV (CES)
B V(ECR)
B V GE
ICES
IGES
RGE
P ar am et e r
Test Conditions
Min.
Clamped Voltage
Emitter Collector
Break-down Voltage
IC =2mA
IC =2mA
IC =2mA
IC = 75 mA
VGE = 0
VGE = 0
VGE = 0
TC = - 40oC
TC = 25oC
TC = 150oC
TC = 25oC
380
375
370
20
Gate Emitter
Break-down Voltage
Collector cut-off
Current (VGE = 0)
IG =± 2 mA
VCE = 15 V VGE = 0 TC = 150 oC
VCE = 200 V VGE = 0 TC = 150 oC
12
Gate-Emitter Leakage VGE = ± 10 V
Current (VCE = 0)
VCE = 0 ± 300
Gate Emitter Resistanc e
10
Typ.
405
400
395
28
Max.
430
425
420
14 16
10
100
± 660 ± 1000
15 30
Unit
V
V
V
V
V
µA
µA
µA
K
ON ()
Symbo l
VGE(th)
P ar am et e r
Gate Threshold
V ol ta ge
VCE(SAT ) Collector-Emitt er
Saturation Voltage
Test Conditions
VCE = VGE IC = 250µA
VCE = VGE IC = 250µA
VCE = VGE IC = 250µA
TC = - 40oC
TC = 25oC
TC = 150oC
VGE = 4.5 V
VGE = 4.5 V
VGE = 4.5 V
VGE = 4.5 V
IC = 10 A
IC = 10 A
IC = 20 A
IC = 20 A
TC = 25oC
TC= 150 oC
TC = 25oC
TC= 150 oC
Min.
1.2
1.0
0.6
Typ.
1.4
1.1
1.0
1.35
1.25
Max.
2
1.8
1.7
2.0
2.0
Unit
V
V
V
V
V
V
V
DYNAMIC
Symbo l
gf s
Cies
Co es
Cres
QG
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Charge
Test Conditions
Min.
VCE = 25 V
IC = 20 A
Typ.
35
Max.
Unit
S
VCE = 25 V f = 1 MHz VGE = 0
2300
165
28
pF
pF
pF
VCE = 280 V IC = 20 A VGE = 5 V
51
nC
2/6

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STGP20NB37LZ
FUNCTIONAL CHARACTERISTICS
Symbo l
P ar am et e r
II Latching Current
U.I. S. Functional Test
Open Secondary Coil
Test Conditions
VCLAMP = 250 V
RGOFF = 1 K
VGE = 4.5 V
TC = 150 oC
RGOFF=1 KL =3 mH TC = 25 oC
RGOFF=1 KL =3 mH TC = 150 oC
Min.
80
21.6
15
Typ.
26
18
Max.
Unit
A
A
A
SWITCHING ON
Symbo l
td(on)
tr
( di / dt ) o n
Eon
P ar am et e r
Delay Time
Rise Time
Turn-on Current Slope
Turn-on
Switching Losses
Test Conditions
VCC = 250 V
VGE= 4.5 V
IC = 20 A
RG = 1 K
VCC = 250 V
RG = 1 K
IC = 20 A
VGE = 4.5 V
VCC=250V IC =20A TC = 25 oC
RG =1 KVGE =4.5V TC = 150 oC
Min.
Typ.
2.3
0.6
550
8.8
9.2
Max.
Unit
µs
µs
A/µs
mJ
mJ
SWITCHING OFF
Symbo l
P ar am et e r
Test Conditions
Min. Typ. Max. Unit
tc
tr(voff)
tf
td (o ff)
Eo ff(**)
Cross-O ver Time
VCC = 250 V
Off Volt age Rise Time RGE = 1 K
Fall Time
Off Voltage Delay Time
Turn-off Switching Loss
IC = 20 A
VGE = 4.5 V
4.8
2.6
2.0
11.5
11.8
µs
µs
µs
µs
mJ
tc
tr(voff)
tf
td (o ff)
Eo ff(**)
Cross-O ver Time
VCC = 250 V
Off Volt age Rise Time RGE = 1 K
Fall Time
TC = 150 oC
Off Voltage Delay Time
Turn-off Switching Loss
IC = 20 A
VGE = 4.5 V
7.8
3.5
3.9
12.0
17.8
µs
µs
µs
µs
mJ
() Pulse width limited by safe operating area (*) Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
(**)Losses Include Also The Tail (jedec Standardization)
3/6

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STGP20NB37LZ
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And DIode Recovery Times
4/6

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DIM.
A
C
D
D1
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
STGP20NB37LZ
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.4
10.0
13.0
2.65
15.25
6.2
3.5
3.75
TO-220 MECHANICAL DATA
mm
TYP.
1.27
16.4
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.7
10.40
14.0
2.95
15.75
6.6
3.93
3.85
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.511
0.104
0.600
0.244
0.137
0.147
inch
TYP.
0.050
0.645
MAX.
0.181
0.051
0.107
0.027
0.034
0.067
0.067
0.203
0.106
0.409
0.551
0.116
0.620
0.260
0.154
0.151
L2
Dia.
L5
L7
L6
L9
L4
P011C
5/6