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STGB20NB32LZ
STGB20NB32LZ-1
N-CHANNEL CLAMPED 20A - D2PAK/I2PAK
INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE
VCES
VCE(sat)
IC
STGB20NB32LZ CLAMPED < 2.0 V
STGB20NB32LZ-1 CLAMPED < 2.0 V
20 A
20 A
s POLYSILICON GATE VOLTAGE DRIVEN
s LOW THRESHOLD VOLTAGE
s LOW ON-VOLTAGE DROP
s HIGH CURRENT CAPABILITY
s HIGH VOLTAGE CLAMPING FEATURE
s SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESHIGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
APPLICATIONS
s AUTOMOTIVE IGNITION
3
1
D2PAK
123
I2PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCES
Collector-Emitter Voltage (VGS = 0)
VECR
Reverse Battery Protection
VGE Gate-Emitter Voltage
IC Collector Current (continuous) at Tc = 25°C
IC Collector Current (continuous) at Tc = 100°C
ICM ( ) Collector Current (pulsed)
Eas Single Pulse Energy Tc = 25°C
Ptot Total Dissipation at Tc = 25°C
Derating Factor
ESD ESD (Human Body Model)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
December 2002
Value
CLAMPED
20
CLAMPED
40
30
80
700
150
1
4
–65 to 175
175
Unit
V
V
V
A
A
A
mJ
W
W/°C
KV
°C
°C
1/11

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STGB20NB32LZ - STGB20NB32LZ-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Rthc-sink Thermal Resistance Case-sink Typ
1 °C/W
62.5 °C/W
0.2 °C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
BV(CES) Clamped Voltage
IC = 2 mA, VGE = 0, Tc= - 40°C
IC = 2 mA, VGE = 0, Tc= 25°C
330 355 380
325 350 375
IC = 2 mA, VGE = 0, Tc= 150°C
320 345 370
BV(ECR) Emitter Collector Break-down IC = 75 mA, Tc = 25°C
Voltage
20 28
BVGE
Gate Emitter Break-down
Voltage
IG = ± 2 mA
12 14 16
ICES
Collector cut-off Current
(VGE = 0)
VCE = 15 V, VGE =0 ,TC =150 °C
VCE =200 V, VGE=0 ,TC =150°C
10
100
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 10V , VCE = 0
± 400 ± 660 ± 1000
RGE Gate Emitter Resistance
10 15 25
Unit
V
V
V
V
V
µA
µA
µA
K
ON (1)
Symbol
VGE(th)
Parameter
Gate Threshold Voltage
VCE(SAT) Collector-Emitter Saturation
Voltage
Test Conditions
VCE = VGE, IC = 250µA, Tc=-40°C
VCE = VGE, IC = 250µA, Tc= 25°C
VCE =VGE, IC = 250µA, Tc=150°C
VGE =4.5V, IC = 10 A, Tc= 25°C
VGE =4.5V, IC = 10 A, Tc= 150°C
VGE =4.5V, IC = 20 A, Tc= 25°C
VGE =4.5V, IC = 20 A, Tc= 150°C
Min.
1.2
1
0.6
Typ.
1.4
1.1
1
1.35
1.25
Max.
2
1.8
1.7
2
2
Unit
V
V
V
V
V
V
V
DYNAMIC
Symbol
gfs
Cies
Coes
Cres
Qg
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Charge
Test Conditions
VCE = 25 V , IC =20 A
VCE = 25 V, f = 1 MHz, VGE = 0
VCE = 280 V, IC = 20 A,
VGE = 5 V
Min.
Typ.
35
2300
165
28
51
Max.
Unit
S
pF
pF
pF
nC
2/11

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STGB20NB32LZ - STGB20NB32LZ-1
FUNCTIONAL CHARACTERISTICS
Symbol
II
Parameter
Latching Current
U.I.S.
Functional Test Open
Secondary Coil
Test Conditions
VClamp = 250 V, TC = 150 °C
RGOFF = 1K, VGE = 4.5 V
RGOFF = 1K, L = 3 mH ,Tc=25°C
RGOFF =1K, L = 3mH ,Tc=150°C
Min.
80
21.6
15
Typ.
Max. Unit
A
26 A
18 A
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
(di/dt)on
Delay Time
Rise Time
Turn-on Current Slope
Eon Turn-on Switching Losses
VCC = 250 V, IC = 20 A
RG = 1K, VGE = 4.5 V
VCC= 250 V, IC = 20 A
RG=1K, VGE = 4.5 V
VCC= 250 V, IC = 20 A, Tc=25°C
RG=1K, VGE = 4.5 V, Tc=150°C
SWITCHING OFF
Symbol
Parameter
Test Conditions
tc
tr(Voff)
Cross-Over Time
Off Voltage Rise Time
Vcc = 250 V, IC = 20 A,
RGE = 1 K, VGE = 4.5 V
tf
td(off)
Fall Time
Off Voltage Delay Time
Eoff(**) Turn-off Switching Loss
tc Cross-Over Time
tr(Voff) Off Voltage Rise Time
tf Fall Time
td(off)
Off Voltage Delay Time
Eoff(**) Turn-off Switching Loss
(**)Losses Include Also the Tail (jedec Standardization)
Vcc = 250 V, IC = 20 A,
RGE = 1 K, VGE = 4.5 V
Tc = 150 °C
Min.
Min.
Typ.
2.3
0.6
550
Max.
Unit
µs
µs
A/µs
8.8 mJ
9.2 mJ
Typ.
4.8
2.6
2
11.5
11.8
7.8
3.5
3.9
12
17.8
Max.
Unit
µs
µs
µs
µs
mJ
µs
µs
µs
µs
mJ
Thermal Impedance
3/11

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STGB20NB32LZ - STGB20NB32LZ-1
Output Characteristics
Transfer Characteristics
Normalized Gate Threshold Voltage vs Temp.
Transconductance
Collector-Emitter On Voltage vs Temperature
Capacitance Variations
4/11

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Gate Charge vs Gate-Emitter Voltage
STGB20NB32LZ - STGB20NB32LZ-1
Normalized BreakDown Voltage vs Temperature
Break-Down Voltage vs Emitter Resistance
BVGEO (Zener Gate-Emitter) vs Temperature
Self Clamped Inductive Switching Energy vs
Open Secondary Coil
dV/dt Gate-Emitter Resistance
5/11