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Preliminary Data Sheet No. PD60131-L
IR21531D(S) & (PbF)
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features
Integrated 600V half-bridge gate driver
15.6V zener clamp on Vcc
True micropower start up
Tighter initial deadtime control
Low temperature coefficient deadtime
Shutdown feature (1/6th Vcc) on CT pin
Increased undervoltage lockout Hysteresis (1V)
Lower power level-shifting circuit
Constant LO, HO pulse widths at startup
Lower di/dt gate driver for better noise immunity
Low side output in phase with RT
Internal 50nsec (typ.) bootstrap diode (IR21531D)
Excellent latch immunity on all inputs and outputs
ESD protection on all leads
Also available LEAD_FREE
Product Summary
VOFFSET
Duty Cycle
Tr/Tp
Vclamp
Deadtime (typ.)
Packages
600V max.
50%
80/40ns
15.6V
0.6 µs
Description
The IR21531(D)(S) are an improved version of the
8 Lead PDIP
8 Lead SOIC
popular IR2155 and IR2151 gate driver ICs, and in-
corporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard
CMOS 555 timer. The IR21531 provides more functionality and is easier to use than previous ICs. A shutdown
feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage
control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage
lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at
startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers,
and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to
maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.
IR21531(S)
VCC VB
Typical Connections
600V
MAX
IR21531D
VCC VB
600V
MAX
HO
RT VS
HO
RT VS
Shutdown
CT LO
COM
Shutdown
CT LO
COM
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IR21531D(S) & (PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions.
Symbol
VB
VS
VHO
VLO
VRT
VCT
ICC
IRT
dVs/dt
PD
RthJA
TJ
TS
TL
Definition
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
Low side output voltage
RT pin voltage
CT pin voltage
Supply current (note 1)
RT pin current
Allowable offset voltage slew rate
Maximum power dissipation @ TA +25°C (8 Lead DIP)
(8 Lead SOIC)
Thermal resistance, junction to ambient
(8 Lead DIP)
(8 Lead SOIC)
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
Min.
-0.3
VB - 25
VS - 0.3
-0.3
-0.3
-0.3
-5
-50
-55
-55
Max.
625
VB + 0.3
VB + 0.3
VCC + 0.3
VCC + 0.3
VCC + 0.3
25
5
50
1.0
0.625
125
200
150
150
300
Units
V
mA
V/ns
W
°C/W
°C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol
VBS
VS
VCC
ICC
TJ
Definition
High side floating supply voltage
Steady state high side floating supply offset voltage
Supply voltage
Supply current
Junction temperature
Min.
VCC - 0.7
-3.0 (note 2)
10
(note 3)
-40
Max.
VCLAMP
600
VCLAMP
5
125
Units
V
mA
°C
Note 1:
Note 2:
Note 3:
This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown
voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source
greater than the VCLAMP specified in the Electrical Characteristics section.
Care should be taken to avoid output switching conditions where the VS node flies inductively below ground by
more than 5V.
Enough current should be supplied to the VCC pin of the IC to keep the internal 15.6V zener diode clamping the
voltage at this pin.
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Recommended Component Values
Symbol
RT
CT
Component
Timing resistor value
CT pin capacitor value
IR21531D(S) & (PbF)
Min.
10
330
Max.
Units
k
pF
1000000
100000
10000
1000
100
10
10
IIRR221155331 RRTT vvss FFrreeqquueennccyy
330pf
470pF
1nF
2.2nF
4.7nF
10nF
CT Values
100
1000
10000
RT (ohms)
100000
1000000
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IR21531D(S) & (PbF)
Electrical Characteristics
VBIAS (VCC, VBS) = 12V, CL = 1000 pF, CT = 1 nF and TA = 25°C unless otherwise specified. The VIN, VTH and IIN
parameters are referenced to COM. The VO and IO parameters are referenced to COM and are applicable to the
respective output leads: HO or LO.
Low Voltage Supply Characteristics
Symbol Definition
VCCUV+
VCCUV-
VCCUVH
IQCCUV
IQCC
VCLAMP
Rising VCC undervoltage lockout threshold
Falling VCC undervoltage lockout threshold
VCC undervoltage lockout Hysteresis
Micropower startup VCC supply current
Quiescent VCC supply current
VCC zener clamp voltage
Floating Supply Characteristics
Min.
8.1
7.2
0.5
14.4
Typ.
9.0
8.0
1.0
75
500
15.6
Max.
9.9
8.8
1.5
150
950
16.8
Units Test Conditions
V
µA VCC VCCUV-
V ICC = 5mA
Symbol Definition
IQBSUV
IQBS
VBSMIN
ILK
VF
Micropower startup VBS supply current
Quiescent VBS supply current
Minimum required VBS voltage for proper
functionality from RT to HO
Offset supply leakage current
Bootstrap diode forward voltage (IR21531D)
Oscillator I/O Characteristics
Min.
0.5
Typ.
0
30
4.0
Max.
10
50
5.0
50
1.0
Units Test Conditions
µA VCC VCCUV-
V VCC=VCCUV+ + 0.1V
µA VB = VS = 600V
V IF = 250mA
Symbol Definition
fosc Oscillator frequency
d
ICT
ICTUV
VCT+
VCT-
VCTSD
VRT+
RT pin duty cycle
CT pin current
UV-mode CT pin pulldown current
Upper CT ramp voltage threshold
Lower CT ramp voltage threshold
CT voltage shutdown threshold
High-level RT output voltage, VCC - VRT
VRT-
Low-level RT output voltage
VRTUV
VRTSD
UV-mode RT output voltage
SD-Mode RT output voltage, VCC - VRT
Min.
19.4
94
48
0.30
1.8
Typ.
20
100
50
0.001
0.70
8.0
4.0
2.1
10
100
10
100
0
10
10
Max.
20.6
106
52
1.0
1.2
2.4
50
300
50
300
100
50
300
Units
kHz
%
uA
mA
V
mV
Test Conditions
RT = 36.9k
RT = 7.43k
fo < 100kHz
VCC = 7V
IRT = 100µA
IRT = 1mA
IRT = 100µA
IRT = 1mA
VCC VCCUV-
IRT = 100µA,
VCT = 0V
IRT = 1mA,
VCT = 0V
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IR21531D(S) & (PbF)
Electrical Characteristics (cont.)
Gate Driver Output Characteristics
Symbol Definition
VOH High level output voltage, VBIAS -VO
VOL
Low-level output voltage, VO
VOL_UV UV-mode output voltage, VO
tr Output rise time
tf Output fall time
tsd Shutdown propogation delay
td Output deadtime (HO or LO)
Min.
0.35
Typ.
0
0
0
80
45
660
0.60
Max.
100
100
100
150
100
0.85
Units Test Conditions
IO = OA
mV IO = OA
IO = OA
VCC VCCUV-
nsec
µsec
Lead Definitions
Symbol
VCC
RT
CT
COM
LO
VS
HO
VB
Description
Logic and internal gate drive supply voltage
Oscillator timing resistor input
Oscillator timing capacitor input
IC power and signal ground
Low side gate driver output
High voltage floating supply return
High side gate driver output
High side gate driver floating supply
Lead Assignments
8 Lead DIP
IR21531(D)
NOTE: The IR21531D is offered in 8 lead DIP only.
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8 Lead SOIC
IR21531S
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