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STB70NF03L
STP70NF03L - STB70NF03L-1
N-channel 30V - 0.0075- 70A - D2PAK - I2PAK - TO-220
Low gate charge STripFET™ II Power MOSFET
General features
Type
STB70NF03L
STP70NF03L
STB70NF03L-1
VDSS
30V
30V
30V
RDS(on)
< 0.0095
< 0.0095
< 0.0095
Conduction losses reduced
Switching losses reduced
ID
70A
70A
70A
Description
This application specific Power MOSFET is the
third genaration of STMicroelectronis unique
"Single Feature Size™" strip-based process. The
resulting transistor shows the best trade-off
between on-resistance and gate charge. When
used as high and low side in buck regulators, it
gives the best performance in terms of both
conduction and switching losses. This is
extremely important for motherboards where fast
switching and high efficiency are of paramount
importance.
Applications
Switching application
3
1
D²PAK
123
I2PAK
3
2
1
TO-220
Internal schematic diagram
Order codes
Part number
STB70NF03L
STP70NF03L
STB70NF03L-1
July 2006
Marking
B70NF03L
P70NF03L
B70NF03L
Package
D²PAK
TO-220
I²PAK
Rev 10
Packaging
Tape & reel
Tube
Tube
1/15
www.st.com
15

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Contents
Contents
STB70NF03L - STP70NF03L - STB70NF03L-1
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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STB70NF03L - STP70NF03L - STB70NF03L-1
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VDGR Drain-gate voltage (RGS = 20k)
VGS Gate- source voltage
ID Drain current (continuous) at TC = 25°C
ID
IDM(1)
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
Derating factor
dv/dt (2) Peak diode recovery voltage slope
EAS (3) Single pulse avalanche energy
Tstg Storage temperature
TJ Operating junction temperature
1. Current limited by the package
2. ISD 70A, di/dt 350A/µs, VDD V(BR)DSS, TJ TJMAX
3. Starting TJ = 25 oC, ID = 35A, VDD = 25V
Table 2. Thermal data
Symbol
Parameter
RthJC
RthJA
Tl
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Electrical ratings
Value
30
30
± 18
70
50
280
100
0.67
5.5
500
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Value
1.5
62.5
300
Unit
°C/W
°C/W
°C
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Electrical characteristics
STB70NF03L - STP70NF03L - STB70NF03L-1
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3. ON/OFF states
Symbol
Parameter
Test conditions
Min Typ Max Unit
Drain-source
V(BR)DSS Breakdown voltage
ID = 250µA, VGS = 0
30
V
IDSS
Zero gate voltage
Drain current (VGS = 0)
VDS = Max rating
VDS = Max rating
TC = 125°C
1 µA
10 µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 18V
±100 nA
VGS(th) Gate threshold voltage VDS = VGS
ID = 250µA 1
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V
VGS = 5 V
ID = 35A
ID = 18A
0.0075 0.0095 W
0.0135 0.018 W
Table 4.
Symbol
Dynamic
Parameter
gfs (*)
Ciss
Coss
Crss
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Test conditions
Min Typ Max Unit
VDS = 15V
ID = 35A
VDS = 25V f = 1 MHz VGS = 0
25
1440
560
135
S
pF
pF
pF
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STB70NF03L - STP70NF03L - STB70NF03L-1
Electrical characteristics
Table 5. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
Qg
Qgs
Qgd
td(off)
tf
Total gate charge
Gate-source charge
Gate-drain charge
Turn-off delay time
Fall time
Test conditions
VDD = 15V
RG = 4.7
Figure 16.
ID = 35A
VGS = 5V
Min
VDD= 15V ID= 70A
VGS= 5V
VDD = 15V
RG = 4.7Ω,
Figure 16.
ID = 35A
VGS = 5V
Typ
22
165
22.5
9
12
21
25
Max
30
Unit
ns
ns
nC
nC
nC
ns
ns
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
ISD
ISDM(1)
Source-drain current
Source-drain current
(pulsed)
VSD (2) Forward on voltage
ISD = 70A
VGS = 0
trr
Qrr
IRRM
Reverse recovery time ISD = 70A di/dt = 100A/µs
Reverse recovery charge VDD = 20V TJ = 150°C
Reverse recovery current Figure 15.
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
70 A
280 A
1.3 V
42 ns
52 nC
2.5 A
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