STB70NF03L.pdf 데이터시트 (총 9 페이지) - 파일 다운로드 STB70NF03L 데이타시트 다운로드

No Preview Available !

STP70NF03L
STB70NF03L-1
N-CHANNEL 30V - 0.008- 70A TO-220/I2PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
STP70NF03L
STB70NF03L-1
30 V
30 V
< 0.01
< 0.01
s TYPICAL RDS(on) = 0.008
s TYPICAL Qg = 35 nC @ 10 V
s OPTIMAL RDS(on) x Qg TRADE-OFF
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
ID
70 A
70 A
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique “Single
Feature Size™” strip-based process. The result-
ing transistor shows the best trade-off between on-
resistance and gate charge. When used as high
and low side in buck regulators, it gives the best
performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
3
2
1
TO-220
123
I2PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
March 2001
Value
30
30
± 15
70
50
280
100
0.67
4
–65 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1) ISD 70A, di/dt 290A/µs, VDD =24 V ; Tj TJMAX.
1/9

No Preview Available !

STP70NF03L/STB70NF03L-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Tl Maximum Lead Temperature For Soldering Purpose
1.5
62.5
300
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
35
450
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
30
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10 V, ID = 35 A
VGS = 5 V, ID = 18 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
1
70
Typ.
2
0.008
0.015
Max.
0.01
0.018
Unit
V
A
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 35 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
40
1470
490
110
Max.
Unit
S
pF
pF
pF
2/9

No Preview Available !

STP70NF03L/STB70NF03L-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V, ID = 35 A
RG = 4.7VGS = 4.5 V
(see test circuit, Figure 3)
Qg Total Gate Charge
VDD = 24 V, ID = 46A,
VGS = 10V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
td(off)
Turn-off-Delay Time
tf Fall Time
Test Conditions
VDD = 15 V, ID = 35 A,
RG = 4.7Ω, VGS = 4.5V
(see test circuit, Figure 3)
Min.
Typ.
20
350
35
Max.
45
Unit
ns
ns
nC
5 nC
10 nC
Min.
Typ.
35
Max.
Unit
ns
65 ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (1) Source-drain Current (pulsed)
VSD (2) Forward On Voltage
ISD = 70 A, VGS = 0
trr Reverse Recovery Time
ISD = 70 A, di/dt = 100A/µs,
VDD = 20 V, Tj = 150°C
(see test circuit, Figure 5)
Qrr Reverse Recovery Charge
IRRM
Reverse Recovery Current
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
75
Max.
70
280
1.5
Unit
A
A
V
ns
110 nC
2.9 A
Safe Operating Area
Thermal Impedence
3/9

No Preview Available !

STP70NF03L/STB70NF03L-1
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/9

No Preview Available !

Normalized Gate Threshold Voltage vs
Temperature
STP70NF03L/STB70NF03L-1
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9