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® STPS1545D/F/FP/R/G
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
15 A
45 V
175 °C
VF (max)
0.57 V
FEATURES AND BENEFITS
s VERY SMALL CONDUCTION LOSSES
s NEGLIGIBLE SWITCHING LOSSES
s EXTREMELY FAST SWITCHING
s INSULATED PACKAGE: ISOWATT220AC,
TO-220FPAC
Insulating voltage = 2000V DC
Capacitance = 12pF
s AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Single chip Schottky rectifier suited for Switch
Mode Power Supply and high frequency DC to DC
converters.
Packaged in TO-220AC, ISOWATT220AC,
TO-220FPAC, I2PAK or D2PAK, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
ABSOLUTE RATINGS (limiting values)
A
K
TO-220AC
STPS1545D
A
K
TO-220FPAC
STPS1545FP
A
AK
I2PAK
STPS1545R
K
A
K
ISOWATT220AC
STPS1545F
A
NC
D2PAK
STPS1545G
Symbol
VRRM
IF(RMS)
IF(AV)
IFSM
IRRM
IRSM
PARM
Tstg
Tj
dV/dt
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward current
δ = 0.5
TO-220AC,
I2PAK, D2PAK
Tc = 155°C
ISOWATT220AC Tc = 130°C
TO-220FPAC
Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak reverse current tp = 2 µs square F = 1kHz
Non repetitive peak reverse current tp = 100 µs square
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Value
45
30
15
220
1
3
6000
- 65 to + 175
175
10000
Unit
V
A
A
A
A
A
W
°C
°C
V/µs
* : dPtot <
1 thermal runaway condition for a diode on its own heatsink
dTj Rth( j a)
July 2003 - Ed: 5F
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STPS1545D/F/FP/R/G
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
Parameter
TO-220AC, I2PAK,
D2PAK
ISOWATT220AC
TO-220FPAC
Value
1.6
4.0
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
IR * Reverse leakage current
VF * Forward voltage drop
Tests Conditions
Tj = 25°C
VR = VRRM
Tj = 125°C
Tj = 125°C IF = 15 A
Tj = 25°C
IF = 30 A
Tj = 125°C IF = 30 A
Min.
Typ.
11
0.5
0.65
Max.
200
40
0.57
0.84
0.72
Unit
µA
mA
V
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.42 x IF(AV) + 0.01 IF2(RMS)
Fig. 1: Average forward power dissipation versus
average forward current.
Fig. 2: Average current versus ambient
temperature (δ = 0.5).
PF(av)(W)
12
10 δ = 0.05
δ = 0.1
δ = 0.2
8
6
4
2
IF(av) (A)
0
0 2 4 6 8 10
δ = 0.5
δ=1
T
δ=tp/T
tp
12 14 16 18
IF(av)(A)
18
16
14
12
10
8
6
T
4
2
δ=tp/T
0
0 25
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
ISOWATT220AC
tp
50
Tamb(°C)
75 100
125
TO-220AC
150 175
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1 10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
Tj(°C)
0
100 1000
0 25 50 75 100 125 150
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Fig. 5-1: Non repetitive surge peak forward cur-
rent versus overload duration (maximum values)
(TO-220AC, I2PAK and D2PAK).
IM(A)
200
180
160
140
120
100
80
60
40 IM
20 t
δ=0.5
t(s)
0
1E-3
1E-2
1E-1
Tc=75°C
Tc=100°C
Tc=125°C
1E+0
STPS1545D/F/FP/R/G
Fig. 5-2: Non repetitive surge peak forward cur-
rent versus overload duration (maximum values)
(ISOWATT220AC, TO-220FPAC).
IM(A)
120
100
80
60
40
IM
20 t
δ=0.5 t(s)
0
1E-3
1E-2
1E-1
Tc=75°C
Tc=100°C
Tc=125°C
1E+0
Fig. 6-1: Relative variation of thermal transient im-
pedance junction to case versus pulse duration
(TO-220AC, I2PAK and D2PAK).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
0.2 δ = 0.2
δ = 0.1
0.0
1E-4
Single pulse
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Fig. 6-2: Relative variation of thermal transient im-
pedance junction to case versus pulse duration
(ISOWATT220AC, TO-220FPAC).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
0.2 δ = 0.2
δ = 0.1
0.0
1E-3
Single pulse
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
IR(µA)
5E+4
1E+4
1E+3
1E+2
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Tj=50°C
1E+1
1E+0
0
Tj=25°C
VR(V)
5 10 15 20 25 30 35 40 45
C(pF)
2000
1000
500
200
100
1
2
F=1MHz
Tj=25°C
VR(V)
5 10
20
50
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STPS1545D/F/FP/R/G
Fig. 9: Forward voltage drop versus forward
current (maximum values).
IFM(A)
100.0
Typical values
Tj=125°C
10.0
Tj=25°C
1.0
Tj=125°C
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (epoxy printed
circuit board FR4, Cu=35µm) (D2PAK).
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
S(Cu) (cm²)
0
0 5 10 15 20 25 30 35 40
PACKAGE MECHANICAL DATA
TO-220FPAC
A
HB
L2
L3
L4
Dia
L6
L5
F1
D
L7
F
G1
G
E
REF.
A
B
D
E
F
F1
G
G1
H
L2
L3
L4
L5
L6
L7
Dia.
DIMENSIONS
Millimeters
Inches
Min. Max. Min. Max.
4.4 4.6 0.173 0.181
2.5 2.7 0.098 0.106
2.5 2.75 0.098 0.108
0.45 0.70 0.018 0.027
0.75 1 0.030 0.039
1.15 1.70 0.045 0.067
4.95 5.20 0.195 0.205
2.4 2.7 0.094 0.106
10 10.4 0.393 0.409
16 Typ.
28.6 30.6
0.63 Typ.
1.126 1.205
9.8 10.6 0.386 0.417
2.9 3.6 0.114 0.142
15.9 16.4 0.626 0.646
9.00 9.30 0.354 0.366
3.00 3.20 0.118 0.126
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PACKAGE MECHANICAL DATA
ISOWATT220AC
A
HB
L6
L2
L3
F1
F
G
DE
STPS1545D/F/FP/R/G
DIMENSIONS
REF.
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 4.40
4.60 0.173
0.181
B 2.50
2.70 0.098
0.106
D 2.40
2.75 0.094
0.108
E 0.40
L7
F 0.75
0.70 0.016
1.00 0.030
0.028
0.039
F1 1.15
1.70 0.045
0.067
G 4.95
5.20 0.195
0.205
H 10.00
10.40 0.394
0.409
L2 16.00
0.630
L3 28.60
30.60 1.125
1.205
L6 15.90
16.40 0.626
0.646
L7 9.00
9.30 0.354
0.366
Diam 3.00
3.20 0.118
0.126
PACKAGE MECHANICAL DATA
I²PAK
E
L2
A
c2
D
L1
L
e
b2
b1
b
A1
c
REF.
A
A1
b
b1
b2
c
c2
D
e
E
L
L1
L2
DIMENSIONS
Millimeters
Inches
Min. Max. Min. Max.
4.40 4.60 0.173 0.181
2.49 2.69 0.098 0.106
0.70 0.93 0.028 0.037
1.14 1.17 0.044 0.046
1.14 1.17 0.044 0.046
0.45 0.60 0.018 0.024
1.23 1.36 0.048 0.054
8.95 9.35 0.352 0.368
2.40 2.70 0.094 0.106
10.0 10.4 0.394 0.409
13.1 13.6 0.516 0.535
3.48 3.78 0.137 0.149
1.27 1.40 0.050 0.055
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