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Ordering number : ENN6960
2SB1683 / 2S2DSB21663893 : PNP Epitaxial Planar Silicon Transistor
2SD2639 : NPN Triple Diffused Planar Silicon Transistor
2SB1683 / 2SD2639
140V / 12A, AF 60W Output Applications
Features
Wide ASO because of on-chip ballast resistance.
Good dependence of fT on current and good HF
characteristic.
Package Dimensions
unit : mm
2010C
[2SB1683 / 2SD2639]
10.2
3.6 5.1
4.5
1.3
1.2
Specifications
( ) : 2SB1683
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Conditions
VCB=(--)80V, IE=0
VEB=(--)4V, IC=0
0.8
123
2.55 2.55
min
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220
Ratings
(--)160
(--)140
(--)6
(--)12
(--)15
80
150
--40 to +150
Unit
V
V
V
A
A
W
°C
°C
Ratings
typ
max
Unit
(--)0.1 mA
(--)0.1 mA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62501 TS IM TA-3139, 3140 No.6960-1/4

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2SB1683 / 2SD2639
Continued from preceding page.
Parameter
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Base-to-Emitter Saturation Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Fall Time
Storage Time
Symbol
Conditions
hFE1
hFE2
fT
Cob
VBE
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tf
tstg
VCE=(--)5V, IC=(--)1A
VCE=(--)5V, IC=(--)6A
VCE=(--)5V, IC=(--)1A
VCB=(--)10V, f=1MHz
VCE=(--)5V, IC=(--)1A
IC=(--)5A, IB=(--)0.5A
IC=(--)5mA, IE=0
IC=(--)5mA, RBE=
IC=(--)50mA, RBE=
IE=(--)5mA, IC=0
See specified test circuit.
See specified test circuit.
See specified test circuit.
* : The 2SB1683 / 2SD2639 are classified by 1A hFE as follows :
Rank
D
E
hFE 60 to 120 100 to 200
min
60*
20
Ratings
typ
15
(300)210
(--)160
(--)140
(--)140
(--)6
(1.1)0.6
(0.25)0.26
(0.53)0.68
(1.61)6.88
max
200*
1.5
2.5
Unit
MHz
pF
V
V
V
V
V
V
µs
µs
µs
Switching Time Test Circuit
PW=20µs
D.C.1%
Input
51
IB1
IB2
VR
200
RB
1
+
1µF
Output
RL
20
+
VCC=20V
1µF
VBE=--2V 10IB1= --10IB2=IC=1A
(For PNP, the polarity is reversed)
IC -- VCE
--10
2SB1683
--8 --20--01m60AmA
--120mA
--6
--80mA
--4
--40mA
--20mA
--2
IB=0
0
0 --10 --20 --30 --40
Collector-to-Emitter Voltage, VCE -- V IT03152
IC -- VBE
--7
2SB1683
--6 VCE= --5V
--5
--4
--3
--2
--1
0
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6
Base-to-Emitter Voltage, VBE -- V IT03154
IC -- VCE
10
200mA
2SD2639
160mA
8 120mA
80mA
6
40mA
4
20mA
2
00 10 20 30 40
Collector-to-Emitter Voltage, VCE -- V IT03153
IC -- VBE
7
2SD2639
VCE=5V
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Base-to-Emitter Voltage, VBE -- V IT03155
No.6960-2/4

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2SB1683 / 2SD2639
5 f T -- IC
5 f T -- IC
2SB1683
2SD2639
3
VCE= --5V
3
VCE=5V
22
10
7
5
3
2
1.0
--0.1
1000
7
5
3
2
23
5 7 --1.0
23
Collector Current, IC -- A
hFE -- IC
5 7 --10
IT03156
2SB1683
VCE= --5V
100
7
5
3
2
10
--0.1
2
1000
7
5
3
2
23
5 7 --1.0
23
5 7 --10
2
Collector Current, IC -- A
Cob -- VCB
IT03158
2SB1683
f=1MHz
100
7
5
3
2
--1.0
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
--0.1
23
5 7 --10
23
5 7 --100
Collector-to-Base Voltage, VCB -- V IT03160
VCE(sat) -- IC
2SB1683
IC / IB=10
23
5 7 --1.0
23
Collector Current, IC -- A
5 7 --10
IT03162
10
7
5
3
2
1.0
0.1
1000
7
5
3
2
23
5 7 1.0
23
Collector Current, IC -- A
hFE -- IC
5 7 10
IT03157
2SD2639
VCE=5V
100
7
5
3
2
10
0.1
2
1000
7
5
3
2
23
5 7 1.0
23
5 7 10
2
Collector Current, IC -- A
Cob -- VCB
IT03159
2SD2639
f=1MHz
100
7
5
3
2
1.0
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
0.1
23
5 7 10
23
5 7 100
Collector-to-Base Voltage, VCB -- V IT03161
VCE(sat) -- IC
2SD2639
IC / IB=10
23
5 7 1.0
23
Collector Current, IC -- A
5 7 10
IT03163
No.6960-3/4

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2SB1683 / 2SD2639
5 VBE(sat) -- IC
2SD1683
3 IC / IB=10
2
5 VBE(sat) -- IC
2SD2639
3 IC / IB=10
2
--10 10
77
55
33
22
--1.0
7
5
--0.1
23
5 7 --1.0
23
5 7 --10
Collector Current, IC -- A
Forward Bias A S O
IT03164
3
2 ICP=15A
2SB1683 / 2SD2639
10
7
IC=12A
5
3
2
1.0
7
5
DC oper1a0ti0omn1s0ms1ms
3 Tc=25°C
2 Single pulse
For PNP, minus sign is omitted
0.1
1.0 2 3 5 7 10 2 3
5 7 100
Collector-to-Emitter Voltage, VCE -- V
23
IT03166
1.0
7
5
0.1
120
100
23
5 7 1.0
23
Collector Current, IC -- A
PC -- Tc
5 7 10
IT03165
2SB1683 / 2SD2639
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT03168
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2001. Specifications and information herein are subject
to change without notice.
PS No.6960-4/4