03N70P.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 03N70P 데이타시트 다운로드

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Advanced Power
Electronics Corp.
AP03N70P
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Dynamic dv/dt Rating
D
Repetitive Avalanche Rated
Fast Switching
Simple Drive Requirement
G
S
Description
AP03N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.TO-220 type
provide high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
BVDSS 600/650/700V
RDS(ON)
3.6Ω
ID 3.3A
G
D
S
TO-220
The TO-220 package is universally preferred for all commercial-industrial
applications. The device is suited for switch mode power supplies ,DC-
AC converters and high current high speed switching circuits.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
ID@TC=100
IDM
PD@TC=25
EAS
IAR
EAR
TSTG
TJ
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
- /A/H
Rating
600/650/700
± 30
3.3
2.1
13.2
45
0.36
85
3.3
3.3
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.8
62
Units
V
V
A
A
A
W
W/
mJ
A
mJ
Unit
/W
/W
Data & specifications subject to change without notice
200303032

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AP03N70P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
/-
VGS=0V, ID=1mA
/A
VGS=0V, ID=1mA
/H
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance
Gate Threshold Voltage
VGS=10V, ID=1.6A
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
VDS=10V, ID=1.6A
VDS=600V, VGS=0V
VDS=480V, VGS=0V
VGS= ± 30V
ID=3.3A
VDS=480V
VGS=10V
VDD=300V
ID=3.3A
RG=10Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=91Ω
VGS=0V
VDS=25V
f=1.0MHz
600 - - V
650 - - V
700 - - V
- 0.6 - V/
- - 3.6 Ω
2 - 4V
-2-S
- - 10 uA
- - 100 uA
- - ±100 nA
- 11.4 - nC
- 3.1 - nC
- 4.2 - nC
- 8.4 - ns
-6-
- 17.7 -
ns
ns
- 5.9 - ns
- 600 -
- 45 -
-4-
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage3
Test Conditions
VD=VG=0V , VS=1.5V
Tj=25, IS=3.3A, VGS=0V
Min. Typ. Max. Units
- - 3.3 A
- - 13.2 A
- - 1.5 V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=15mH , RG=25Ω , IAS=3.3A.
3.Pulse width <300us , duty cycle <2%.
Ordering Code
AP03N70P- X : X Denote BVDSS Grade
Blank = BVDSS 600V
A = BVDSS 650V
H = BVDSS 700V

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AP03N70P
4
T C =25 o C
3
V G =10V
V G =6.0V
2
V G =5.0V
1
V G =4.5V
V G =4.0V
0
0
5 10 15 20 25
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
T C =150 o C
2
2
V G =10V
V G =5.0V
V G =4.5V
1
V G =4.0V
1
V G =3.5V
0
0 5 10 15 20 25
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0 50 100
T j , Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS v.s. Junction
Temperature
3
I D =3.5A
2.5 V G =10V
2
1.5
1
0.5
0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature

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AP03N70P
3.5
3
2.5
2
1.5
1
0.5
0
25
50 75 100 125
T c , Case Temperature ( o C )
150
Fig 5. Maximum Drain Current v.s.
Case Temperature
50
40
30
20
10
0
0 50 100 150
Tc , Case Temperature( o C)
Fig 6. Typical Power Dissipation
100
10
1
0
T c =25 o C
Single Pulse
0
1 10
100
V DS (V)
10us
100us
1ms
10ms
100ms
1000
10000
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance

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AP03N70P
16
14 I D =3.3A
V DS =480V
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
100
Coss
Crss
1
1 5 9 13 17 21 25 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j = 150 o C
1
T j = 25 o C
0.1
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
5
4
3
2
1
0
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature