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STP7NB80
® STP7NB80FP
N - CHANNEL 800V - 1.2- 6.5A - TO-220/TO-220FP
PowerMESHMOSFET
TYPE
VDSS
RDS(on)
ID
ST P7N B80
ST P7N B80 FP
800 V
800 V
< 1.5
< 1.5
6.5 A
6.5 A
s TYPICAL RDS(on) = 1.2
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
VDS Drain-source Volt age (VGS = 0)
V DGR
VGS
ID
ID
IDM ()
Ptot
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO
Ts tg
Insulation Withstand Voltage (DC)
Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
( *) Limited only maximum temperature allowed
April 1999
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
Un it
STP7NB80 STP7NB80FP
800 V
800 V
± 30
V
6.5
6. 5 (* )
A
4.1
4. 1 (* )
A
26 26 A
135
1.08
40
0.32
W
W /o C
4.5 4.5 V/ns
--
2000
oC
-65 to 150
oC
150 oC
( 1) ISD 6.5A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
1/9

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STP7NB80/FP
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
0.92
TO-220FP
3.13
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
6.5
400
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
Pa ram et e r
Test Conditions
Dr ain- s ou rc e
Breakdown Voltage
ID = 250 µ A VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
800
Typ. Max.
1
50
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
Pa ram et e r
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 3.2 A
Resistance
On Stat e Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
3
T yp.
4
Max.
5
Unit
V
1.2 1.5
6.5 A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
Pa ram et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Cap a ci t an c e
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 3.2 A
Min.
1.5
T yp.
6.5
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
1400
180
20
pF
pF
pF
2/9

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STP7NB80/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
Pa ram et e r
Turn-on Time
Rise Time
Qg Tot al Gate Charge
Q gs Gat e-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 400 V ID = 3.5 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 3)
VDD = 640 V ID = 7 A VGS = 10 V
RG = 4.7
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 640 V ID = 7 A
RG = 4.7 VGS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 6. 5 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 7 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
T yp.
20
10
Max.
Unit
ns
ns
40 52 nC
10 nC
18 nC
Min.
T yp.
15
15
25
Max.
Unit
ns
ns
ns
Min.
T yp.
Max.
6.5
26
Unit
A
A
750
7.10
19
1.6
V
ns
µC
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9

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STP7NB80/FP
Thermal Impedance for TO-220
Thermal Impedance for TO-220FP
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
4/9

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Gate Charge vs Gate-source Voltage
Capacitance Variations
STP7NB80/FP
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9