G20N120.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 G20N120 데이타시트 다운로드

No Preview Available !

Semiconductor
HGTG20N120E2
April 1995
34A, 1200V N-Channel IGBT
Features
• 34A, 1200V
• Latch Free Operation
• Typical Fall Time - 780ns
• High Input Impedance
• Low Conduction Loss
Description
The HGTG20N120E2 is a MOS gated, high voltage switch-
ing device combining the best features of MOSFETs and
bipolar transistors. The device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state voltage drop
varies only moderately between +25oC and +150oC.
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
The development type number for this device is TA49009.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
HGTG20N120E2 TO-247
BRAND
G20N120E2
Package
JEDEC STYLE TO-247
COLLECTOR
(BOTTOM SIDE
METAL)
EMITTER
COLLECTOR
GATE
Terminal Diagram
C
G
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector-Gate Breakdown Voltage RGE = 1M. . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR
Collector Current Continuous
At TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = +90oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching SOA at TC = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(0.125" from case for 5 seconds)
Short Circuit Withstand Time (Note 2)
At VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
At VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
NOTES:
HGTG20N120E2
1200
1200
34
20
100
±20
±30
100A at 0.8 BVCES
150
1.20
-55 to +150
260
3
15
UNITS
V
V
A
A
A
V
V
-
W
W/oC
oC
oC
µs
µs
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PEAK) = 720V, TC = +125oC, RGE = 25
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1995
3-98
File Number 3370.2

No Preview Available !

Specifications HGTG20N120E2
Electrical Specifications TC = +25oC, Unless Otherwise Specified
LIMITS
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Emitter Breakdown
Voltage
BVCES IC = 250µA, VGE = 0V
1200
-
-
V
Collector-Emitter Leakage Current
Collector-Emitter Saturation
Voltage
Gate-Emitter Threshold Voltage
ICES
VCE(SAT)
VGE(TH)
VCE = BVCES
VCE = 0.8 BVCES
IC = IC90, VGE = 15V
IC = IC90, VGE = 10V
IC = 500µA,
VCE = VGE
TC = +25oC
TC = +125oC
TC = +25oC
TC = +125oC
TC = +25oC
TC = +125oC
TC = +25oC
- - 250 µA
- - 1.0 mA
- 2.9 3.5 V
- 3.0 3.6 V
- 3.1 3.8 V
- 3.3 4.0 V
3.0 4.5 6.0
V
Gate-Emitter Leakage Current
IGES
VGE = ±20V
-
-
±250
nA
Gate-Emitter Plateau Voltage
VGEP
IC = IC90, VCE = 0.5 BVCES
- 7.0 -
V
On-State Gate Charge
QG(ON)
IC = IC90,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
-
110 150
nC
-
150 200
nC
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
tD(ON)
tR
tD(OFF)I
RL = 48
L = 50µH
IC = IC90, VGE = 15V,
VCE = 0.8 BVCES,
RG = 25,
TJ = +125oC
-
-
-
100 -
150 -
520 620
ns
ns
ns
Current Fall Time
tFI
-
780 1000
ns
Turn-Off Energy (Note 1)
WOFF
- 7.0 - mJ
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
tD(ON)
tR
tD(OFF)I
RL = 48
L = 50µH
IC = IC90, VGE = 10V,
VCE = 0.8 BVCES,
RG = 25,
TJ = +125oC
-
-
-
100 -
150 -
420 520
ns
ns
ns
Current Fall Time
tFI
-
780 1000
ns
Turn-Off Energy (Note 1)
Thermal Resistance
WOFF
RθJC
- 7.0 - mJ
-
0.70
0.83 oC/W
NOTE:
1. Turn-Off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). The HGTG20N120E2 was tested per JEDEC standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3-99

No Preview Available !

Typical Performance Curves
HGTG20N120E2
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
FIGURE 3. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
FIGURE 4. FALL TIME AS A FUNCTION OF COLLECTOR-
EMITTER CURRENT
FIGURE 5. CAPACITANCE AS A FUNCTION OF COLLECTOR-
EMITTER VOLTAGE
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT
CONSTANT GATE CURRENT. (REFER TO
APPLICATION NOTES AN7254 AND AN7260)
3-100

No Preview Available !

HGTG20N120E2
Typical Performance Curves (Continued)
FIGURE 7. SATURATION VOLTAGE AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 8. TURN-OFF SWITCHING LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
FIGURE 9. TURN-OFF DELAY AS A FUNCTION OF COLLECTOR- FIGURE 10. OPERATING FREQUENCY AS A FUNCTION OF
EMITTER CURRENT
COLLECTOR-EMITTER CURRENT AND VOLTAGE
FIGURE 11. COLLECTOR-EMITTER SATURATION VOLTAGE
3-101

No Preview Available !

Test Circuit
HGTG20N120E2
L = 50µH
1/RG = 1/RGEN + 1/RGE
RGEN = 50
20V
0V
RGE = 50
VCC
960V
+
-
FIGURE 12. INDUCTIVE SWITCHING TEST CIRCUIT
Operating Frequency Information
Handling Precautions for IGBTs
Operating frequency information for a typical device (Figure
10) is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 7, 8 and 9. The operating
frequency plot (Figure 10) of a typical device shows fMAX1 or
fMAX2 whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
fMAX1 is defined by fMAX1 = 0.05/tD(OFF)I. tD(OFF)I deadtime
(the denominator) has been arbitrarily held to 10% of the on-
state time for a 50% duty factor. Other definitions are
possible. tD(OFF)I is defined as the time between the 90%
point of the trailing edge of the input pulse and the point
where the collector current falls to 90% of its maximum
value. Device turn-off delay can establish an additional fre-
quency limiting condition for an application other than TJMAX.
tD(OFF)I is important when controlling output ripple under a
lightly loaded condition. fMAX2 is defined by fMAX2 = (Pd - Pc)/
WOFF. The allowable dissipation (Pd) is defined by Pd =
(TJMAX - TC)/RθJC. The sum of device switching and conduc-
tion losses must not exceed Pd. A 50% duty factor was used
(Figure 10) and the conduction losses (Pc) are approximated
by Pc = (VCE ICE)/2. WOFF is defined as the integral of the
instantaneous power loss starting at the trailing edge of the
input pulse and ending at the point where the collector
current equals zero (ICE = 0A).
The switching power loss (Figure 10) is defined as fMAX2
WOFF. Turn-on switching losses are not included because
they can be greatly influenced by external circuit conditions
and components.
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
Trademark Emerson and Cumming, Inc.
3-102