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STP130NS04ZB
STB130NS04ZB - STW130NS04ZB
N-CHANNEL CLAMPED - 7 m- 80A TO-220/D²PAK/TO-247
FULLY PROTECTED MESH OVERLAY™ MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
STP130NS04ZB
STB130NS04ZB
STW130NS04ZB
CLAMPED
CLAMPED
CLAMPED
< 9 m
< 9 m
< 9 m
80 A
80 A
80 A
s TYPICAL RDS(on) = 7 m
s 100% AVALANCHE TESTED
s LOW CAPACITANCE AND GATE CHARGE
s 175°C MAXIMUM JUNCTION TEMPERATURE
DESCRIPTION
This fully clamped MOSFET is produced by using
the latest advanced Company’s Mesh Overlay
process which is based on a novel strip layout.
The inherent benefits of the new technology cou-
pled with the extra clamping capabilities make this
product particularly suitable for the harshest oper-
ation conditions such as those encountered in the
automotive environment .Any other application re-
quiring extra ruggedness is also recommended.
Figure 1: Package
3
2
1
TO-220
3
1
D²PAK
3
2
1
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS
s HIGH SWITCHING CURRENT
s LINEAR APPLICATIONS
Table 2: Order Codes
Sales Type
STP130NS04ZB
STB130NS04ZBT4
STW130NS04ZB
Marking
P130NS04ZB
B130NS04ZB
W130NS04ZB
Package
TO-220
D²PAK
TO-247
February 2005
Packaging
TUBE
TAPE & REEL
TUBE
Rev. 2
1/12

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STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDG Drain-gate Voltage
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDG Drain Gate Current (continuous)
IGS Gate Source Current (continuous)
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate-Source ESD(HBM-C=100 pF, R=1.5 KΩ)
Tj Max Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case
Max
Rthj-pcb (*) Thermal Resistance Junction-pcb
Max
Rthj-a Thermal Resistance Junction-ambient
Max
Tl Maximum Lead Temperature For Soldering
Purpose (1.6 mm from case, for 10 sec)
(*)When mounted on 1 inch² FR4 2oZ Cu
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 30 V)
Value
CLAMPED
CLAMPED
CLAMPED
80
60
± 50
± 50
320
300
2.0
4
-55 to 175
TO-220
--
62.5
D²PAK
0.50
35
--
300
Max Value
80
500
Unit
V
V
V
A
A
mA
mA
A
W
W/°C
KV
°C
TO-247
--
50
Unit
°C/W
°C/W
°C
Unit
A
mJ
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STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
V(BR)DSS Clamped Voltage
ID = 1 mA, VGS = 0
-40 < Tj < 175 °C
33
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = 16 V,Tj = 25 °C
VDS = 16 V,Tj = 125 °C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±10 V,Tj = 25 °C
VGSS
Gate-Source
Breakdown Voltage
IGS = ±100 µA
18
VGS(th) Gate Threshold Voltage
VDS = VGS = ID = 1 mA
2
RDS(on)
Static Drain-source On
Resistance
VGS = 10 V ,ID = 40 A
7
Max.
10
100
10
4
9
Unit
V
µA
µA
µA
V
V
m
Table 7: Dynamic
Symbol
Parameter
gfs Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
td(on)
tf
td(off)
tf
Turn-on Delay Time
Fall Time
Turn-off Delay Time
Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDS = 15 V, ID = 40 A
VDS = 25 V, f = 1MHz, VGS = 0
VDD = 17.5 V, ID = 40 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
VDD = 20 V, ID = 80 A,
VGS = 10 V
(see Figure 17)
Min.
Typ.
50
2700
1275
285
40
220
170
100
80
20
27
Max.
105
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Table 8: Source Drain Diode
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 80 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80 A, di/dt = 100A/µs
VDD = 25V, Tj = 150°C
(see Figure 16)
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Min.
Typ.
90
0.18
4
Max.
80
320
1.5
Unit
A
A
V
ns
µC
A
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STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
Figure 3: Safe Operating Area
Figure 6: Thermal Impedance
Figure 4: Output Characteristics
Figure 7: Transfer Characteristics
Figure 5: Transconductance
Figure 8: Static Drain-source On Resistance
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STP130NS04ZB - STB130NS04ZB - STW130NS04ZB
Figure 9: Gate Charge vs Gate-source Voltage
Figure 12: Normalized On Resistance vs Tem-
perature
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 13: Source-drain Diode Forward Char-
acteristics
Figure 11: Capacitance Variations
Figure 14: Normalized BVDSS vs Temperature
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