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KSE13007F
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
1 TO-220F
1.Base 2.Collector 3.Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
V CEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector- Base Voltage
Collector- Emitter Voltage
Emitter- Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
700
400
9
8
16
4
40
150
- 65 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
IEBO
hFE
VCE(sat)
Collector-Base Breakdown Voltage
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
Cob Output Capacitance
fT Current Gain Bandwidth Product
tON Turn On Time
tSTG
Storage Time
tF Fall Time
* Pulse Test: PW300µs, Duty Cycle2%
IC = 10mA, IB = 0
VEB = 9V, IC = 0
VCE = 5V, IC = 2A
VCE = 5V, IC = 5A
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 8A, IB = 2A
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
VCB = 10V , f = 0.1MHz
VCE = 10V, IC = 0.5A
VCC =125V, IC = 5A
IB1 = - IB2 = 1A
RL = 50
Min.
400
8
5
4
Typ.
110
Max.
1
60
30
1
2
3
1.2
1.6
1.6
3
0.7
Units
V
mA
V
V
V
V
V
pF
MHz
µs
µs
µs
©2002 Fairchild Semiconductor Corporation
Rev. A2, June 2002

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Typical Characteristics
100
VCE = 5V
10
1
0.1 1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
10
1000
100
10
1
0.1 1 10 100 1000
V [V], COLLECTOR-BASE VOLTAGE
CB
Figure 3. Collector Output Capacitance
10000
1000
V =125V
CC
I =5I
CB
tSTG
100
tF
10
0.1
1
IC[A], COLLECTOR CURRENT
Figure 5. Turn Off Time
©2002 Fairchild Semiconductor Corporation
10
10
I =3I
CB
1
VBE(sat)
0.1 VCE(sat)
0.01
0.1
1 10
IC[A], COLLECTOR CURRENT
100
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
tR
100
tD, VBE(off)=5V
V =125V
CC
I =5I
CB
10
0.1
1
IC[A], COLLECTOR CURRENT
Figure 4. Turn On Time
10
100
10
DC
1
0.1
0.01
1
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
Figure 6. Safe Operating Area
Rev. A2, June 2002

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Typical Characteristics (Continued)
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A2, June 2002

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Package Demensions
TO-220F
10.16 ±0.20
(7.00)
ø3.18 ±0.10
2.54 ±0.20
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
0.35 ±0.10
#1
2.54TYP
[2.54 ±0.20]
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
0.50
+0.10
–0.05
2.76 ±0.20
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A2, June 2002

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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Product Status
Formative or In
Design
First Production
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H7