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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SC3243 TRANSISTOR (NPN)
TO-92MOD
FEATURES
Power dissipation
PCM:
0.9 W (Tamb=25)
Collector current
ICM:
Collector-base voltage
1A
V(BR)CBO:
60 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=10µA, IE=0
Ic=2mA, IB=0
IE=10µA, IC=0
VCB=50V, IE=0
VEB=4V, IC=0
VCE=4V, IC=100mA
IC=500mA, IB=25mA
VCE=2V, IC=10mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
60 V
60 V
6V
0.2 µA
0.2 µA
55 300
0.3 V
80 MHz
25 pF
omCLASSIFICATION OF hFE(1)
.cRank
t4uRange
www.datasheeMarking
C
55-110
D
90-180
E
150-300