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® STY34NB50
N - CHANNEL 500V - 0.11- 34 A - Max247
PowerMESHMOSFET
TYPE
VDSS
RDS(on)
ID
ST Y34NB50
500 V < 0.13 34 A
s TYPICAL RDS(on) = 0.11
s EXTREMELY HIGH dv/dt CAPABILITY
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
3
2
1
Max247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Volt age (VGS = 0)
VD GR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg St orage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
June 1998
Value
Uni t
500 V
500 V
± 30
V
34 A
21.4
A
136 A
450
3.61
W
W/oC
4.5
-65 to 150
150
(1) ISD 34 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX
V/ ns
oC
oC
1/8

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STY34NB50
THERMAL DATA
Rt hj-ca se
Rt hj- amb
Rthc- si nk
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
M ax
Typ
0. 277
30
0.1
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value
34
1000
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
V(BR)DSS
IDSS
IGSS
P a ram et er
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
oC
Tc = 125
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
500
Typ .
M a x.
Unit
V
10 µA
100 µA
± 100 nA
ON ()
Symb ol
V GS(th )
RDS( o n )
ID(o n)
P a ram et er
Test Conditions
Gate T hreshold Voltage VDS = VGS ID = 250 µA
St atic Drain-source O n VGS = 10 V ID = 17 A
Resistance
On Stat e Drain Current VDS > ID(on) x RDS(on) max
VGS = 10 V
Min.
3
Typ .
4
0.11
M a x.
5
0.13
Unit
V
34 A
DYNAMIC
Symb ol
gfs ()
Ciss
Coss
Crss
P a ram et er
Forward
T r ans c on duc ta nc e
Input Capacitance
Output Capacitance
Reverse Transfer
Ca pac i ta nc e
Test Conditions
VDS > ID(on) x RDS(on)max ID = 17 A
Min.
18
Typ .
20
M a x.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
7000
950
80
9100
1235
104
pF
pF
pF
2/8

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STY34NB50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
td(on)
tr
P a ram et er
Turn-on Time
Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 250 V
ID = 17 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 3)
VDD = 400 V ID = 34 A VGS = 10 V
Min.
Typ .
46
32
159
35
67
M a x.
64
45
223
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symb ol
tr(Vo f f)
tf
tc
P a ram et er
Off-voltage Rise Time
Fall Time
Cross-over T ime
Test Conditions
VDD = 400 V
ID = 34 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 5)
Min.
Typ .
56
53
120
M a x.
78
74
168
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
ISD
ISDM ()
VSD ()
trr
Qrr
IRRM
P a ram et er
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Cu r re nt
Test Conditions
ISD = 34 A VGS = 0
ISD = 34 A
VDD = 100 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, figure 5)
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ .
M a x.
34
136
Unit
A
A
1.6
950
V
ns
12 µC
25 A
Safe Operating Area
Thermal Impedance
3/8