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2SB1063
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD1499
Features
Extremely satisfactory linearity of the forward current transfer ratio hFE
Wide safe operation area
High transition frequency fT
Full-pack package which can be installed to the heat sink with one
screw
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
100
100
5
5
8
40
2.0
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ 3.1±0.1
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
2.54±0.3
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
VBE
ICBO
IEBO
hFE1
hFE2 *
hFE3
VCE(sat)
fT
Cob
Conditions
VCE = −5 V, IC = −3 A
VCB = −100 V, IE = 0
VEB = −3 V, IC = 0
VCE = −5 V, IC = −20 mA
VCE = −5 V, IC = −1 A
VCE = −5 V, IC = −3 A
IC = −3 A, IB = − 0.3 A
VCE = −5 V, IC = − 0.5 A, f = 1 MHz
VCB = −10 V, IE = 0, f = 1 MHz
Min Typ Max Unit
1.8 V
50 µA
50 µA
20
40 200
20
2 V
20 MHz
170 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2
40 to 80
60 to 120
100 to 200
Publication date: February 2003
SJD00039AED
1

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PC Ta
80
(1)TC=Ta
(2)With a 100×100×2mm
Al heat sink
(3)Without heat sink
(PC=2.0W)
60
(1)
40
20
(2)
(3)
0
0
40
80 120 160
Ambient temperature Ta (°C)
IC VCE
6
TC=25˚C
IB=–80mA
5
–70mA
–60mA
4 –50mA
–40mA
3 –30mA
–20mA
2
–10mA
1
–5mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
IC VBE
6
VCE=–5V
25˚C
5
TC=100˚C –25˚C
4
3
2
1
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
100
10
1
0.1
VCE(sat) IC
IC/IB=10
TC=100˚C
25˚C
–25˚C
hFE IC
104
VCE=–5V
103
TC=100˚C
25˚C
102
–25˚C
10
1 000
100
10
1
fT IC
VCE=–5V
f=1MHz
TC=25˚C
0.01
0.01
0.1
1
Collector current IC (A)
10
1
0.01
0.1
1
Collector current IC (A)
10
0.1
0.01
0.1
1
Collector current IC (A)
10
Safe operation area
100
Non repetitive pulse
TC=25˚C
10 ICP
IC
1
DC
t=1ms
t=10ms
Rth t
102
(1)Without heat sink
(2)With a 100×100×2mm Al heat sink
10
1
(1)
(2)
0.1
101
0.01
1
10
100
1 000
Collector-emitter voltage VCE (V)
102
103
102
101
1 10
Time t (s)
102 103 104
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2002 JUL