D1296.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 D1296 데이타시트 다운로드

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Product Specification
Silicon NPN Power Transistors
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2SD1296
DESCRIPTION
With TO-3PN package
High DC current gain
Low saturation voltage
APPLICATIONS
www.DataSheet4U.Fcoomr audio frequency power amplifier
and low speed high current switching
industrial use
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
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Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
MAX
VCBO
Collector-base voltage
Open emitter
150
VCEO
Collector-emitter voltage
Open base
100
VEBO
Emitter-base voltage
Open collector
8
IC Collector current
15
ICM Collector current-peak
30
PT Total power dissipation
TC=25
Ta=25
100
3.0
Tj Junction temperature
150
Tstg Storage temperature
-55~150
UNIT
V
V
V
A
A
W
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www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD1296
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0
100
V
VCEsat
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VBEsat
Collector-emitter saturation voltage IC=15A ;IB=30mA
Base-emitter saturation voltage
IC=15A ;IB=30mA
1.5 V
2.2 V
ICBO Collector cut-off current
VCB=100V; IE=0
10 A
IEBO Emitter cut-off current
VEB=5V; IC=0
5 mA
hFE DC current gain
IC=15A ; VCE=2V
1000
30000
Switching times
ton Turn-on time
1.0
www.DataSheet4U.comtstg Storage time
IC=15A; IB1=-IB2=30mA
VCC 60V;RL=4
5.0
tf Fall time
2.0
s
s
s
hFE Classifications
ML
K
J
1000-3000 2000-5000 4000-10000 8000-30000
JMnic
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www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
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www.jmnic.com
2SD1296
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Fig.2 outline dimensions
JMnic
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