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eet4U.com 2
5b1u2s.DxIna8tt-eabrSiftahCceMOS EEPROMS with I C-The INF8594E is а 4-Kbit (512 х 8-bit) floating gate electrically erasable
programmable read only memory (ЕЕРPROM). By using an internal redundant
wstorage code it is fault tolerant to single bit errors. This feature dramatically
wincreases reliability compared to conventional ЕЕРRОМ memories.
w Power consumption is low due to the full СМОS technology used. The
TECHNICAL DATA
INF8594E
programming voltage 1s generated on-chip, using а voltage multiplier.
As data bytes are received and transmitted via the serial I2C-bus, а
mpackage using eight pins is sufficient. Up to four INF8594E devices may be
connected to the Ic-bus. Chip select is accomplished by two address inputs.
oTiming of the Erase/Write cycle is done internally, thus no external com-
ponents are required. Pin 7 must be connected to either VDD or left open-circuit.
.cThere is an option of using an external clock or timing the length of an
Erase/Write cycle.
A write protection input (pin 1) allows disable of write-commands from
Uthe master by а hardware signal. When pin 1 is HIGH and one of the upper 256
t4ЕЕРRОМ cells is addressed, then the data bytes will not be acknowledged by
the INF8594E and the ЕЕРRОМ contents are not changed.
eePIN ASSIGNMENT
Low Power CMOS
hmaximum active current 2.5 mА
maximum standby current 10 µA
SNon-volatile storage of 4-Kbits organized as two pages
each 256 х 8-bits
taOnly one power supply required
On-chip voltage multiplier
aSerial input/output bus (I2C)
Write operations
.Dbyte write mode
8.byte page write mode (minimizes total write time рег byte)
Write-protection input
wRead operations
sequential read
wrandom read
.Extended supply voltage range (2,5 to 6.0 V).
wInternal timer for writing (no external components)
INF8594E Plastic DIP
TA = -40° to 85°C
.Power-on reset
.High reliability by using а redundant storage code
(single bit error correction)
.Endurance
100 k. Tamb = 85 °С
10 years non-volatile data retention time
Pin and Address compatible to
INF8594E Family and PCx8598X2 Family
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INF8594E
ORDERING INFORMATION
EXTENDED TYPE NUMBER
INF8594E
PINS
8
PACKAGE
PIN POSITION
MATERIAL
DIP plastic
CODE
SOT97
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDD Positive supply voltage
IDDR Supply current READ
IDDW Supply current ERASE/WRITE
IDDO Supply current STANDBY
CONDITIONS
fSCL= 100 kHz
VDD= 3V
VDD= 6V
fSCL= 100 kHz
VDD= 3V
VDD= 6V
VDD= 3V
VDD= 6V
MIN
2.5
MAX
6.0
UNIT
V
- 60 µA
- 200 µA
- 0.8 mA
- 2.5 mA
- 3.5 µA
- 10 µA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VDD positive supply voltage
VI voltage on any input pin
IZII > 500
II current on any input pin
-
IO output current
-
Tstg storage temperature range
Tamb ambient operating temperature
range
INF8594E
MIN
-0.3
VSS-0.8
-
-
-65
MAX UNIT
+7.0 V
VDD+0.8
1
V
mA
10 mA
+150
°C
-40 +40 °C
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INF8594E
CHARACTERISTICS
INF8594E: VDD =4.5 to 5.5 V; VSS = 0 V; Tamb = -40 to +85°C
SYMBOL
PARAMETER
Supply
VDD
IDDR
IDDW
IDDO
positive supply voltage
PCF8594E
supply current READ
INF8594E
supply current ERASE/WRITE
INF8594E
supply current STANDY
INF8594E
PTC Input
VIL LOW level input voltage
VIH HIGH level input voltage
SCL Input
VIL LOW level input voltage
VIH HIGH level input voltage
ILI input leakage current
fSCL clock frequency
CI input capacitance
SDA Input/Output
VIL LOW level input voltage
VIH HIGH level input voltage
ILI input leakage current
fSCL clock frequency
CI input capacitance
Data retention time
tS data region time
CONDITIONS
fSCL = 100 kHz
VDD(max)
fSCL = 100 kHz
VDD(max)
VDD(max)
VI = VDD or VSS
VI = VSS
IOH = 3 mA; VDD(min)
VOH = VDD
VI = VSS
Tamb = 55 °C
MIN
MAX UNIT
4.5
-
-
-
-0.8
0.9VDD
-0.8
0.7VDD
-
0
-
-0.8
0.7VDD
-
-
-
10
5.5 V
200 µA
2.5 mA
10 µA
0.1VDD V
VDD+0.8 V
0.3VDD
VDD+0.8
±1
100
7
V
V
µA
kHz
pF
0.3VDD
VDD+0.8
0.4
1
7
V
V
V
µA
pF
- yrs
WRITE CYCLE LIMITS
The power-on reset circuit resets the I2C-bus logic with a set-up time 10 µA.
Selection of chip address is achieved by connecting the A1 and A2 inputs to either VSS or VDD.
SYMBOL
tSW
NSW
fP
tIL
tHIGH
tr
tf
td
PARAMETER
ERASE/WRITE cycle time
internal oscillator
external clock
ERASE/WRITE cycles per byte
INF8594E
programming frequency
LOW time
HIGH time
rise time
fall time
delay time
CONDITIONS
Supply
Endurance
Tamb = -40 to +85°C
tE/W = 4 to 10 ms
Tamb = 22°C; tE/W = 5ms
Programming
MIN TYP MAX
- 7-
4-
10
- - 10 000
- - 100 000
25 - 60
5 --
5 --
- - 300
- - 300
0 - tLOW
UNIT
ms
ms
kHz
µs
µs
ns
ns
µs
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INF8594E
LOGIC DIAGRAMM
1.5-10кОм
WP
WP
A1
A2
U SS
Ucc
PTC
SCL
SDA
WP
A1
A2
U SS
Ucc
PTC
SCL
SDA
WP
A1
A2
U SS
U SS
WP
A1
A2
U SS
Ucc
PTC
SCL
SDA
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INF8594E
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