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2SD1376(K)
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB1012(K)
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Outline
TO-126 MOD
123
1. Emitter
2. Collector
3. Base
2
3
6 k
(Typ)
0.5 k
(Typ)
1
ID

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2SD1376(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
www.DataCSthoeeEt4dUio.cdoemforward current
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC (peak)
PC * 1
Tj
Tstg
ID*1
Rating
120
120
7
1.5
3.0
20
150
–55 to +150
1.5
Unit
V
V
V
A
A
W
°C
°C
A
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to emitter breakdown V(BR)CEO
voltage
120
Emitter to base breakdown
voltage
V(BR)EBO
7
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
C to E diode forward voltage
Turn on time
I CBO
I CEO
hFE
VCE (sat)1
VCE (sat)2
VBE (sat)1
VBE (sat)2
VD
Ton
2000
Turn off time
Toff —
Note: 1. Pulse test.
Typ
0.5
2.0
Max Unit
—V
—V
100 µA
10 µA
30000
1.5 V
2.0 V
2.0 V
2.5 V
3.0 V
µs
µs
Test conditions
IC = 10 mA, RBE =
IE = 50 mA, IC = 0
VCB = 120 V, IE = 0
VCE = 100 V, RBE =
VCE = 3 V, IC = 1 A*1
IC = 1 A, IB = 1 mA*1
IC = 1.5 A, IB = 1.5 mA*1
IC = 1 A, IB = 1 mA*1
IC = 1.5 A, IB = 1.5 mA*1
ID = 1.5 A*1
IC = 1 A, IB1 = –IB2 = 1 mA
2

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Maximum Collector Dissipation Curve
30
20
10
0 50 100
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Case temperature TC (°C)
150
Typical Output Characteristics
5
TC = 25°C
4
3
3 1 0.5
P
0.3
0.2
C = 20 W
2
1 IB = 0.1 mA
0 2 4 6 8 10
Collector to emitter voltage VCE (V)
2SD1376(K)
Area of Safe Operation
10
iC (peak)
3
1.0 IC (max)
0.3
0.1
0.03 Ta = 25°C
1 shot pulse
0.01
3
10 30
100
Collector to emitter voltage VCE (V)
300
30,000
10,000
3,000
1,000
300
100
30
0.03
DC Current Transfer Ratio
vs. Collector Current
= 75°C
TC
–25
25
VCE = 3 V
Pulse test
0.1 0.3
1.0
Collector current IC (A)
3
3