B1148.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 B1148 데이타시트 다운로드

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Power Transistors
2SB1148, 2SB1148A
Silicon PNP epitaxial planar type
For low-voltage switching
Complementary to 2SD1752 and 2SD1752A
7.0±0.3
3.0±0.2
Unit: mm
3.5±0.2
s Features
q Low collector to emitter saturation voltage VCE(sat)
q High-speed switching
q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB1148
base voltage 2SB1148A
VCBO
–40
–50
V
Collector to 2SB1148
emitter voltage 2SB1148A
VCEO
–20
–40
V
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VEBO
ICP
IC
PC
Tj
Tstg
–7
–20
–10
15
1.3
150
–55 to +150
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SB1148
current
2SB1148A
Emitter cutoff current
Collector to emitter 2SB1148
voltage
2SB1148A
ICBO
IEBO
VCEO
VCB = –40V, IE = 0
VCB = –50V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –3A
IC = –10A, IB = – 0.33A
IC = –10A, IB = – 0.33A
VCE = –10V, IC = – 0.5A, f = 10MHz
VCB = –10V, IE = 0, f = 1MHz
IC = –3A, IB1 = – 0.1A, IB2 = 0.1A,
VCC = –20V
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
1.1±0.1
0.75±0.1
0.85±0.1
0.4±0.1
2.3±0.2
4.6±0.4
123
7.0±0.3
2.0±0.2
3.0±0.2
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
3.5±0.2
0 to 0.15
1.1±0.1
0.75±0.1
123
2.3±0.2
4.6±0.4
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base
2:Collector
3:Emitter
I Type Package (Y)
min typ max Unit
–50
µA
–50
–50 µA
–20
V
–40
45
90 260
– 0.6
V
–1.5 V
100 MHz
400 pF
0.1 µs
0.5 µs
0.1 µs
1

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Power Transistors
PC — Ta
20
(1) TC=Ta
(2) Without heat sink
(PC=1.3W)
15
10
(1)
5
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
–12
IB=–100mA
TC=25˚C
–80mA
–10
–60mA
–50mA
–8
–40mA
–6 –35mA
–30mA
–25mA
–4 –20mA
–15mA
–2 –10mA
–5mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SB1148, 2SB1148A
–10
–3
–1
– 0.3
– 0.1
VCE(sat) — IC
IC/IB=30
TC=100˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.1 – 0.3 –1 –3 –10
Collector current IC (A)
–10
–3
–1
– 0.3
– 0.1
VBE(sat) — IC
IC/IB=30
TC=–25˚C
100˚C
25˚C
– 0.03
– 0.01
– 0.1 – 0.3 –1 –3 –10
Collector current IC (A)
10000
3000
hFE — IC
VCE=–2V
1000
300
100
30
TC=100˚C
–25˚C
25˚C
10
3
1
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (A)
10000
3000
1000
fT — IC
VCE=–10V
f=10MHz
TC=25˚C
300
100
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
10000
3000
1000
Cob — VCB
IE=0
f=1MHz
Ta=25˚C
300
100
30
10
3
1
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
ton, tstg, tf — IC
10
Pulsed tw=1ms
Duty cycle=1%
3
IC/IB=30
(–IB1=IB2)
VCC=–20V
TC=25˚C
1
tstg
0.3
ton
0.1
tf
0.03
0.01
0
–1 –2 –3 –4 –5 –6 –7 –8
Collector current IC (A)
Area of safe operation (ASO)
–100
–30 ICP
–10 IC
–3
300ms
–1
Non repetitive pulse
TC=25˚C
t=1ms
10ms
– 0.3
– 0.1
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
2

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Power Transistors
103
102
10
Rth(t) — t
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
(2)
1
10–1
10–4
10–3
10–2
10–1
1
10
Time t (s)
102 103
104
2SB1148, 2SB1148A
3