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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA678TB
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µ PA678TB is a switching device, which can be driven
directly by a 2.5 V power source.
The µ PA678TB features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
2.5 V drive available
Low on-state resistance
RDS(on)1 = 1.45 MAX. (VGS = 4.5 V, ID = 0.20 A)
RDS(on)2 = 1.55 MAX. (VGS = 4.0 V, ID = 0.20 A)
RDS(on)3 = 2.98 MAX. (VGS = 2.5 V, ID = 0.15 A)
Two MOS FET circuits in same size package as SC-70
PACKAGE DRAWING (Unit: mm)
0.2
+0.1
-0
0.15
+0.1
-0.05
654
123
0.65 0.65
1.3
2.0 ±0.2
0 to 0.1
0.7
0.9 ±0.1
ORDERING INFORMATION
PART NUMBER
µ PA678TB
Marking: XA
PACKAGE
SC-88 (SSP)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (2 units) Note2
VGSS
ID(DC)
ID(pulse)
PT
m12
m0.25
m1.00
0.2
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
Notes 1. PW 10 µs, Duty Cycle 1%
2. Mounted on FR-4 board of 2500 mm2 x 1.1 mm
V
V
A
A
W
°C
°C
PIN CONNECTION (Top View)
654
1. Source 1
2. Gate 1
3. Drain 2
4. Source 2
5. Gate 2
6. Drain 1
123
Caution This product is electrostatic-sensitive device due to low ESD capability and
shoud be handled with caution for electrostatic discharge.
VESD = ±100 V TYP. (C = 200 pF, R = 0 , Single pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16607EJ1V0DS00 (1st edition)
Date Published February 2003 NS CP(K)
Printed in Japan
2003

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ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 20.0 V, VGS = 0 V
Gate Leakage Current
Gate Cut-off Voltage Note
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
IGSS
VGS(off)
| yfs |
RDS(on)1
VGS = m12.0 V, VDS = 0 V
VDS = 10.0 V, ID = 1.0 mA
VDS = 10.0 V, ID = 0.20 A
VGS = 4.5 V, ID = 0.20 A
RDS(on)2 VGS = 4.0 V, ID = 0.20 A
RDS(on)3 VGS = 2.5 V, ID = 0.15 A
Input Capacitance
Ciss VDS = 10.0 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1.0 MHz
Turn-on Delay Time
td(on) VDD = 10.0 V, ID = 0.20 A
Rise Time
tr VGS = 4.0 V
Turn-off Delay Time
td(off)
RG = 10
Fall Time
tf
Body Diode Forward Voltage
VF(S-D) IF = 0.25 A, VGS = 0 V
Note Pulsed: PW 350 µs, Duty cycle 2%
TEST CIRCUIT SWITCHING TIME
D.U.T.
RG
PG.
VGS()
0
τ
τ = 1µs
Duty Cycle 1%
RL
VDD
VGS()
VGS
Wave Form
10%
0
VDS()
90%
VDS
VDS
Wave Form
0
td(on)
90%
VGS
90%
10% 10%
tr td(off)
tf
ton toff
µ PA678TB
MIN.
0.8
0.2
TYP.
1.3
0.6
1.17
1.25
2.25
29
15
3
23
39
50
33
0.88
MAX.
1.0
m10
1.8
1.45
1.55
2.98
UNIT
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
2 Data Sheet G16607EJ1V0DS

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TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
µ PA678TB
0.24
0.2
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Mounted on FR-4 Board of
2500 mm2 x 1.1 mm
2 units total
0.16
0.12
0.08
0.04
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-1
Pulsed
- 0.8
VGS = 4.5 V
- 0.6
4.0 V
- 0.4
- 0.2
2.5 V
0
0
- 0.4 - 0.8 - 1.2 - 1.6
-2
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
-10
VDS = 10 V
Pulsed
-1
-0.1
-0.01
-0.001
TA = 125°C
75°C
25°C
25°C
-0.0001
0
-1 -2 -3
VGS - Gate to Source Voltage - V
-4
GATE CUT-OFF VOLTAGE vs. CHANNEL
TEMPERATURE
- 1.6
- 1.4
VDS = 10 V
ID = 1.0 m A
- 1.2
-1
- 0.8
- 0.6
-50
0 50 100
Tch - Channel Temperature - °C
150
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
VDS = 10 V
Pulsed
TA = 25°C
1 25°C
75°C
125°C
0.1
0.01
- 0.001
- 0.01
- 0.1
-1
ID - Drain Current - A
- 10
Data Sheet G16607EJ1V0DS
3

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µ PA678TB
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4
Pulsed
VGS = 2.5 V, ID = 0.15 A
3
2
1
0
-50
VGS = 4.0 V, ID = 0.20 A
VGS = 4.5 V, ID = 0.20 A
0 50 100
Tch - Channel Temperature - °C
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
4
ID = 0.20 A
Pulsed
3
2
1
0
0 - 2 - 4 - 6 - 8 - 10 - 12
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
4
VGS = 4.5 V
Pulsed
3
TA = 125°C
2
75°C
25°C
1 25°C
0
- 0.01
- 0.1
-1
ID - Drain Current - A
- 10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
4
VGS = 4.0 V
Pulsed
3
TA = 125°C
2 75°C
25°C
1 25°C
0
- 0.01
- 0.1
-1
ID - Drain Current - A
- 10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
4
TA = 125°C
75°C
3 25°C
25°C
2
CAPACITANCE vs. DRAIN TO SOURCE
VOLTAGE
100
VGS = 0 V
f = 1.0 MHz
C iss
C oss
10
1
0
- 0.01
VGS = 2.5 V
Pulsed
- 0.1
-1
ID - Drain Current - A
- 10
C rss
1
- 0.1
- 1 - 10 - 100
VDS - Drain to Source Voltage - V
4 Data Sheet G16607EJ1V0DS

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1000
SWITCHING CHARACTERISTICS
VDD = 10 V
VGS = 4.0 V
RG = 10
100
10
-0.01
td(off)
tr
tf
td(on)
-0.1 -1
ID - Drain Current - A
-10
µ PA678TB
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
10
VGS = 0 V
P u ls e d
1
0.1
0.01
0.001
0.4
0.6 0.8 1 1.2 1.4
VF(S-D) - Source to Drain Voltage - V
Data Sheet G16607EJ1V0DS
5