03N60S5.pdf 데이터시트 (총 10 페이지) - 파일 다운로드 03N60S5 데이타시트 다운로드

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Cool MOS™ Power Transistor
Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
SPP03N60S5
VDS
RDS(on)
ID
600 V
1.4
3.2 A
PG-TO220
2
P-TO220-3-1
123
Type
SPP03N60S5
Package
PG-TO220
Ordering Code
Q67040-S4184
Marking
03N60S5
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 2.4 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 3.2 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Operating and storage temperature
Ptot
Tj , Tstg
Value
3.2
2
5.7
100
0.2
3.2
±20
±30
38
-55... +150
Unit
A
mJ
A
V
W
°C
Rev. 2.7
Page 1
2009-11-26

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SPP03N60S5
Maximum Ratings
Parameter
Drain Source voltage slope
VDS = 480 V, ID = 3.2 A, Tj = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s3)
Symbol
dv/dt
Value
20
Unit
V/ns
Symbol
RthJC
RthJA
RthJA
Tsold
min.
-
-
Values
typ. max.
- 3.3
- 62
Unit
K/W
- - 62
- 35 -
- - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
min.
Drain-source breakdown voltage
Drain-Source avalanche
breakdown voltage
V(BR)DSS VGS=0V, ID=0.25mA
V(BR)DS VGS=0V, ID=3.2A
600
-
Gate threshold voltage
Zero gate voltage drain current
VGS(th)
IDSS
ID=135µΑ, VGS=VDS
VDS=600V, VGS=0V,
Tj=25°C,
Tj=150°C
3.5
-
-
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
VGS=20V, VDS=0V
VGS=10V, ID=2A,
Tj=25°C
Tj=150°C
-
-
-
Values
typ. max.
--
700 -
4.5 5.5
0.5 1
- 70
- 100
1.26 1.4
3.4 -
Unit
V
µA
nA
Rev. 2.7
Page 2
2009-11-26

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SPP03N60S5
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
min.
Characteristics
Transconductance
gfs
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Ciss
Coss
Crss
t d(on)
tr
t d(off)
tf
VDS2*ID*RDS(on)max,
ID=2A
VGS=0V, VDS=25V,
f=1MHz
VDD=350V, VGS=0/10V,
ID=3.2A, RG=20
-
-
-
-
-
-
-
-
Values
typ. max.
1.8 -
420 -
150 -
3.6 -
35
25 -
40
15 22.5
Unit
S
pF
ns
Gate Charge Characteristics
Gate to source charge
Qgs VDD=350V, ID=3.2A
Gate to drain charge
Gate charge total
Qgd
Qg
VDD=350V, ID=3.2A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=350V, ID=3.2A
- 3.5 - nC
-7-
- 12.4 16
- 8 -V
1Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3Soldering temperature for TO-263: 220°C, reflow
Rev. 2.7
Page 3
2009-11-26