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Sheet4UK.cIoLmOVOLT RECTIFIER ASKSEVMPBLIERSVPMATCHED SILICON RECTIFIER ELEMENTS
taRATED CURRENT TO 1.0 AMPERES
aPRV 5,000 TO 50,000 VOLTS
.DFAST RECOVERY (RVP SERIES)
ALL APPLICABLE MIL-STD-750 TESTS
wHIGH THERMAL CONDUCTIVITY ENCAPSULATION
ww mEDI Type No.
.coKVP5
KVP6
/KVP7
UKVP8
KVP9
t4KV P10
KV P15
/KV P20
eKV P25
KV P 3 0
e /KVP35
hKV P40
KV P50
SRVP5
taRVP6
RVP7
/RV P8
aRV P9
RV P10
RV P15
.D /RV P20
RV P25
RVP30
w /RVP35
RVP40
wRVP50
Peak
Reverse Voltage
PRV ( Volt s)
Avg . Fwd .Cu rre nt
IO at 25 oC
(Am ps)
Max. Fwd Voltage
Drop at 25oC
and 1A. VF (Volts)
5,000
6,000
7,000
8,00 0
9,000
10,000
15,000
20,000
25,000
30,000
35,000
40,000
50,000
STANDARDRECOVERY
1.00
1.00
1.00
1.00
1.00
1.00
1.00
.75
.75
.75
.75
.75
.75
8
9
10
11
14
15
21
26
32
39
46
53
65
5,000
6,000
7,000
8,000
9,000
10,000
15,000
20,000
25,000
30,000
35,000
40,000
50,000
200 NANOSECOND RECOVERY (FIG.4)
.90 10
.90 11
.90 12
.90 13
.90 16
.90 17
.90 25
.70 30
.70 36
.70 43
.70 50
.70 58
.70 72
Dim ensi on
L
Inches
Fig .3
2.5
2.5
3.0
3.0
3.0
3.5
5.0
5.5
6.0
6.0
6.5
6.5
7.0
2.5
2.5
3.0
3.0
3.0
3.5
5.0
5.5
6.0
6.0
6.5
6.5
7.0
Dim ensi on
C
Inch es
Fig .3
1
4
3/8
14
1
2
1
4
3/ 8
1
4
1
2
w omELECTRICAL CHARACTERISTICS
.c(at TA=25 C Unless Otherwise Specified)
UMax. DC Reverse Current @ PRV and 25 oC, IR
t4Max. DC Reverse Current @ PRV and 100 oC, IR
eeAmbient Operating Temperature Range,TA
ShStorage Temperature Range, TSTG
taMax.One-Half Cycle Surge Current, I FM
a(Surge )@ 60Hz
.DForward Current Repetitive Peak,I FRM
KVP SERIES
STANDARD
RECOVERY
5A
100 A
-55 oC to +150oC
-55 oC to +150oC
50 Amps
10 Amps
ELECTRICAL CHARACTERISTICS
(at TA=25 C Unless Otherwise Specified)
Max. DC Reverse Current @ PRV and 25 oC, IR
Max. DC Reverse Current @ PRV and 100 oC, IR
Max. Reverse Recovery Time , Trr (Fig.4)
Ambient Operating Temperature Range,TA
Storage Temperature Range, TSTG
Max.One-HalfCycle Surge Current, IFM
(Surge )@ 60Hz
Forward Current Repetitive Peak,IFRM
RVP SERIES
FAST
RECOVERY
5A
250 A
300 nanosec
-55 oC to +150oC
-55 oC to +150oC
30 Amps
8 Amps
wwwEDI reserves the right to change these specifications at any time without notice.

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KVP RVP
FIG.1
OUTPUT CURRENT vs AMBIENT TEMPERATURE
100
75
50
FIG.2
NON-REPETITIVE SURGE CURRENT RATINGS
0.1SEC
1.0SEC
100
75
50
25
0
0
25
25 50
75 100 125
AMBIENT TEMPERATURE (OC)
150
0
1
FIG.3
CASE STYLE A
L
2 3 4 5 6 7 8 9 10
20 30 40 50 60
CYCLES(60 Hz)
C
3
8
MAX.
3
4
11
4
6-32 THREAD X 1/4 DEEP
4
(2) MTG. INSERTS
3
4
(ALL DIMENSIONS IN INCHES)
It is recommended that a proper heat sink be used on the terminals of this device between the body and the soldering point to
prevent damage form excess heat.
TEST CIRCUIT
FIG.4
TYPICAL REVERSE RECOVERY WAVEFORM
0.5A
T RR
ZERO
REFERENCE
-
R1
50 OHM
D.U.T.
R2
1 OHM
SCOPE
PULSE
GENERATOR
1.0A R1,R2 NON-INDUCTIVE RESISTORS
0.25A PULSE GENERATOR - HEWLETT PACKARD 214A OR EQUIV.
IKC REP.RATE, 10 SEC. PULSE WIDTH
ADJUST PULSE AMPLITUDE FOR PEAK IR
ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951.
21 GRAY OAKS AVENUE * YONKERS. NEW YORK 10710 914-965-4400 * FAX 914-965-5531 * 1-800-678-0828
Ee-mail:sales@edidiodes.com * Wwebsite: http://www.edidiodes.com