5b1u2s.DxIna8tt-eabrSiftahCceMOS EEPROMS with I C-The INF8594E is а 4-Kbit (512 х 8-bit) floating gate electrically erasable
programmable read only memory (ЕЕРPROM). By using an internal redundant
wstorage code it is fault tolerant to single bit errors. This feature dramatically
wincreases reliability compared to conventional ЕЕРRОМ memories.
w Power consumption is low due to the full СМОS technology used. The
programming voltage 1s generated on-chip, using а voltage multiplier.
As data bytes are received and transmitted via the serial I2C-bus, а
mpackage using eight pins is sufficient. Up to four INF8594E devices may be
connected to the Ic-bus. Chip select is accomplished by two address inputs.
oTiming of the Erase/Write cycle is done internally, thus no external com-
ponents are required. Pin 7 must be connected to either VDD or left open-circuit.
.cThere is an option of using an external clock or timing the length of an
A write protection input (pin 1) allows disable of write-commands from
Uthe master by а hardware signal. When pin 1 is HIGH and one of the upper 256
t4ЕЕРRОМ cells is addressed, then the data bytes will not be acknowledged by
the INF8594E and the ЕЕРRОМ contents are not changed.
• Low Power CMOS
hmaximum active current 2.5 mА
• maximum standby current 10 µA
S• Non-volatile storage of 4-Kbits organized as two pages
each 256 х 8-bits
ta• Only one power supply required
• On-chip voltage multiplier
a• Serial input/output bus (I2C)
• Write operations
.Dbyte write mode
8.byte page write mode (minimizes total write time рег byte)
• Write-protection input
w• Read operations
• .Extended supply voltage range (2,5 to 6.0 V).
w• Internal timer for writing (no external components)
INF8594E Plastic DIP
TA = -40° to 85°C
• .Power-on reset
• .High reliability by using а redundant storage code
(single bit error correction)
100 k. Tamb = 85 °С
• 10 years non-volatile data retention time
• Pin and Address compatible to
INF8594E Family and PCx8598X2 Family