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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MRF21085/D
The RF MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
TI3D.y8Qp4i=cMa1lH020z-,0cAamdrrAjiae,crfe1Wn=t-CC2h1Da3Mn5nAMePlHsezMr,fofe2ram=sau2nre1cd4e5ofoMvreHVr zD3,.D8C4=haM2n8HnVzeolBlBtWsa,n@dwfi1dth-5=MHz
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability
on CCDF.
Output Power — 19 Watts Avg.
Power Gain — 13.6 dB
Efficiency — 23%
IM3 — - 37.5 dBc
ACPR — - 41 dBc
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 90 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large - Signal Impedance Parameters
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF21085R3
MRF21085SR3
MRF21085LSR3
2170 MHz, 90 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF21085R3
CASE 465A - 06, STYLE 1
NI - 780S
MRF21085SR3, MRF21085LSR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
- 0.5, +15
224
1.28
- 65 to +150
200
Value (1)
0.78
Class
1 (Minimum)
M3 (Minimum)
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MMoOtorToOla,RInOc.L2A00R4 F DEVICE DATA
MRF21085R3 MRF21085SR3 MRF21085LSR3
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
V(BR)DSS
65
— Vdc
IDSS
10 µAdc
IGSS
1 µAdc
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µAdc)
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1000 mAdc)
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
VGS(th)
VGS(Q)
VDS(on)
gfs
2
3
— 4 Vdc
3.9 5 Vdc
0.18 0.21 Vdc
6—S
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1.0 MHz)
Crss — 3.6 — pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and
IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Gps
12 13.6 —
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
η
20 23 — %
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz BW at f1 - 10 MHz and f2 +10 MHz
referenced to carrier channel power.)
IM3
- 37.5
- 35
dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz at f1 - 5 MHz and f2 +5 MHz.)
ACPR
- 41 - 38 dBc
Input Return Loss
IRL — - 12 - 9 dB
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 90 W CW, IDQ = 1000 mA, f = 2170 MHz
VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
(continued)
MRF21085R3 MRF21085SR3 MRF21085LSR3
MOTOROLA RF DEVICE DATA
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ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (continued)
Two - Tone Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Gps
— 13.6 —
dB
Two - Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
η
— 36 — %
Two - Tone Intermodulation Distortion
IMD — - 31 — dBc
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Input Return Loss
IRL — - 12 — dB
(VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Pout, 1 dB Compression Point
(VDD = 28 Vdc, IDQ = 1000 mA, f = 2170 MHz)
P1dB
100
W
MOTOROLA RF DEVICE DATA
MRF21085R3 MRF21085SR3 MRF21085LSR3
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VGG
R1
R3
B1
+
R2
C5 C4 C3
C2
R4
+
C7 C8
L1
VDD
++
C9 C10 C11 C12
RF
INPUT
Z1
Z2
C1
Z4 Z8
RF
Z3
Z5 Z6
Z7 OUTPUT
DUT C6
Z1 0.750x 0.084Microstrip
Z2 1.015x 0.084Microstrip
Z3 0.480x 0.800Microstrip
Z4 0.750x 0.050Microstrip
Z5 0.610x 0.800Microstrip
Z6 0.885x 0.084Microstrip
Z7 0.720x 0.084Microstrip
Z8 0.800x 0.070Microstrip
Board
PCB
0.030Glass Teflon,
Keene GX - 0300 - 55 - 22, εr = 2.55
Etched Circuit Boards
MRF21085 Rev. 3, CMR
B1
C1, C6
C2
C3, C9
C4, C10
C5
C7
C8
C11, C12
L1
N1, N2
R1
R2
R3, R4
Figure 1. MRF21085 Test Circuit Schematic
Table 1. MRF21085 Test Circuit Component Designations and Values
Designators
Description
Short Ferrite Bead, Fair Rite, #2743019447
43 pF Chip Capacitors, ATC #100B430JCA500X
10 pF Chip Capacitor, ATC #100B100JCA500X
1000 pF Chip Capacitors, ATC #100B102JCA500X
0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS
1.0 mF Tantalum Chip Capacitor, Kemet #T491C105M050
2.7 pF Chip Capacitor, ATC #100B2R7JCA500X
10 mF Tantalum Chip Capacitor, Kemet #T495X106K035AS4394
22 mF Tantalum Chip Capacitors, Kemet #T491X226K035AS4394
1 Turn, #20 AWG, 0.100ID, Motorola
Type N Flange Mounts, Omni Spectra #3052 - 1648 - 10
1.0 k, 1/8 W Chip Resistor
180 k, 1/8 W Chip Resistor
10 , 1/8 W Chip Resistors
MRF21085R3 MRF21085SR3 MRF21085LSR3
MOTOROLA RF DEVICE DATA
4
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R1
R2
C5 C4
B1
C3
C2
R3
WB1
C7 C8
L1
C10 R4
C9
C11 C12
WB2
C1 C6
MRF21085
Rev 3
Figure 2. MRF21085 Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF21085R3 MRF21085SR3 MRF21085LSR3
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5