80N02.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 80N02 데이타시트 다운로드

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NTD80N02
Power MOSFET
24 V, 80 A, N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
Pb−Free Packages are Available
www.DataSheet4TUy.pcoicmal Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ TC = 25°C
Drain Current − Single Pulse (tp = 10 ms)
Total Power Dissipation @ TC = 25°C
Operating and Storage
Temperature Range
VDSS
VGS
ID
IDM
PD
TJ, Tstg
24
±20
80*
200
75
−55 to
150
Vdc
Vdc
Adc
Watts
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 24 Vdc, VGS = 10 Vdc,
IL = 17 Apk, L = 5.0 mH, RG = 25 )
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
EAS
RθJC
RθJA
RθJA
TL
733 mJ
°C/W
1.65
67
120
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in2).
*Chip current capability limited by package.
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V(BR)DSS
24 V
RDS(on) TYP
5.0 mW
ID MAX
80 A
N−Channel
D
G
S
4
44
12
3
12
3
1 23
CASE 369AA CASE 369C CASE 369D
DPAK
DPAK
DPAK
(Surface Mount) (Surface Mount)(Straight Lead)
STYLE 2
STYLE 2
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
1
Gate
23
Drain Source
13
Gate 2 Source
Drain
Y
WW
80N02
= Year
= Work Week
= Device Code
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2004
December, 2004 − Rev. 4
1
Publication Order Number:
NTD80N02/D

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NTD80N02
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Positive Temperature Coefficient
V(BR)DSS
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 24 Vdc)
(VGS = 0 Vdc, VDS = 24 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Negative Threshold Temperature Coefficient
www.DataSheet4US.ctoamtic Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 80 Adc)
(VGS = 4.5 Vdc, ID = 40 Adc)
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 4.5 Vdc, ID = 20 Adc)
VGS(th)
RDS(on)
Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc) (Note 3)
DYNAMIC CHARACTERISTICS
gFS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
(VDS = 20 Vdc,
VGS = 0 V,
f = 1.0 MHz)
Ciss
Coss
Crss
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(VGS = 4.5 Vdc,
VDD = 20 Vdc,
ID = 20 Adc,
RG = 2.5 )
(VGS = 4.5 Vdc,
ID = 20 Adc,
VDS = 20 Vdc) (Note 3)
td(on)
tr
td(off)
tf
QT
Q1
Q2
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 20 Adc, VGS = 0 Vdc) (Note 3)
(IS = 40 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 150°C)
Reverse Recovery Time
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
VSD
trr
ta
tb
Qrr
Min Typ Max Unit
24 27
− 25
Vdc
− mV/°C
mAdc
− − 1.0
− − 10
− − ±100 nAdc
Vdc
1.0 1.9 3.0
− −3.8 − mV/°C
m
− 5.0 5.8
− 7.5 9.0
− 5.0 5.8
7.5 9.0
− 20 − Mhos
2250
2600
pF
− 900 1100
− 400 525
− 17 30 ns
− 67 125
− 28 45
− 40 75
− 30 42 nC
− 7.0 12
− 18 28
Vdc
− 0.92 1.2
− 1.05 −
− 0.70 −
− 38 52 ns
− 20 −
− 18 −
− 0.038 −
mC
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NTD80N02
100
9V
90
8V
80
70
60
50
40
30
4.4 V TJ = 25°C
4.6 V
4.8 V
5V
5.2 V
6.5 V 6 V
4.2 V
4V
3.8 V
3.6 V
3.4 V
20 3.2 V
10 VGS = 3.0 V
0
0 0.5 1 1.5 2 2.5 3 3.5
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VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
4
160
150
140
VDS 24 V
130
120
110
100
90
80
70
60
TJ = 25°C
50
40
30 TJ = 125°C
20
10
TJ = −55°C
0
23
4
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
6
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
ID = 10 A
TJ = 25°C
0.015
TJ = 25°C
0.01
0.005
VGS = 4.5 V
VGS = 10 V
2 468
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance versus
Gate−To−Source Voltage
10
0
55 60 65 70 75 80
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
0.015
0.0125
0.01
0.0075
0.005
0.0025
ID = 80 A
VDS = 4.5 V
1000
VGS = 0 V
100
10
ID = 80 A
VDS = 10 V
1
0.1
TJ = 125°C
TJ = 100°C
TJ = 25°C
0 0.01
−50 −25 0 25 50 75 100 125 150
4
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
8 12 16
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
20
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NTD80N02
5000
4000
VGS = 0 V
TJ = 25°C
10
8
QT
28
24
3000
2000
1000
Ciss
Coss
Crss
0
−8 −6 −4 −2 0 2 4 6 8 10 12 14 16 18 20 22 24
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VGS VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
6 VD
4 Q1
Q2
VGS
20
16
12
8
2
ID = 1.0 A 4
TJ = 25°C
00
0 10 20 30 40 50
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
1000
100
VDD = 20 V
ID = 20 A
VGS = 10 V
tr
tf
td(off)
10 td(on)
1
1 10 100
RG, GATE RESISTANCE ()
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
80
70 VGS = 0 V
TJ = 25°C
60
50
40
30
20
10
0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
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NTD80N02
100
100 ms
VGS = 10 V
10 SINGLE PULSE
TC = 25°C
1 ms
10 ms
RDS(on) LIMIT
THERMAL LIMIT
dc
PACKAGE LIMIT
1
0.1 1
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
www.DataSheet4U.com Figure 11. Maximum Rated Forward Biased
Safe Operating Area
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 12. Diode Reverse Recovery Waveform
1000
DUTY CYCLE
100 D = 0.5
0.2
10 0.1
0.05
0.02
1 0.01
0.1
SINGLE PULSE
0.01
1E−05
1E−04
MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RθJA(t) = r(t) RθJA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) RθJA(t)
1E−03
1E−02
1E−01
t, TIME (seconds)
1E+00
1E+01
1E+02
1E+03
Figure 13. Thermal Response − Various Duty Cycles
ORDERING INFORMATION
Order Number
Package
Shipping
NTD80N02
DPAK−3
75 Units / Rail
NTD80N02G
DPAK−3
(Pb−Free)
75 Units / Rail
NTD80N02T4
DPAK−3
2500 / Tape & Reel
NTD80N02T4G
DPAK−3
(Pb−Free)
2500 / Tape & Reel
NTD80N02−001
DPAK−3 Straight Lead
75 Units / Rail
NTD80N02−1G
DPAK−3 Straight Lead
(Pb−Free)
75 Units / Rail
NTD80N02−032
DPAK−3 Straight Lead
(3.2 ± 0.5 mm)
75 Units / Rail
NTD80N02−032G
DPAK−3 Straight Lead
(3.2 ± 0.5 mm)
(Pb−Free)
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
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