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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
High-Frequency Transistor
. . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband
amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.
Low Noise Figure —
NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA
High Power Gain —
GU(max) = 16.5 dB (Typ) @ f = 500 MHz
Ion Implanted
All Gold Metal System
High fT — 5.5 GHz
Low Intermodulation Distortion:
TB3 = – 70 dB
DIN = 125 dB µV
Nichrome Emitter Ballast Resistors
Order this document
by MRF587/D
MRF587
NF = 3.0 dB @ 0.5 GHz
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 50°C
Derate above TC = 50°C
Storage Temperature Range
Junction Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
17
34
2.5
200
5.0
33
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
V(BR)CEO
Collector–Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
V(BR)CBO
Emitter–Base Breakdown Voltage
(IC = 0, IE = 0.1 mAdc)
V(BR)EBO
Collector Cutoff Current
(VCB = 10 Vdc, IE = 0)
ICBO
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 50 mAdc, VCE = 5.0 Vdc)
hFE
NOTE:
1. 300 µs pulse on Tektronix 576 or equivalent.
Min
17
34
2.5
50
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
www.DataSheet4U.com
CASE 244A–01, STYLE 1
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— 50 µAdc
— 200 —
(continued)
MRF587
1

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ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
(IC = 90 mAdc, VCE = 15 Vdc, f = 0.5 GHz)
fT —
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb —
FUNCTIONAL TESTS
Narrowband — Figure 15
(IC = 90 mA, VCC = 15 V, f = 0.5 GHz)
Noise Figure
Power Gain at Optimum Noise Figure
Broadband — Figure 16
(IC = 90 mA, VCC = 15 V, f = 0.3 GHz)
Noise Figure
Power Gain at Optimum Noise Figure
Triple Beat Distortion
(IC = 50 mA, VCC = 15 V, PRef = 50 dBmV)
(IC = 90 mA, VCC = 15 V, PRef = 50 dBmV)
NF
GNF
NF
GNF
TB3
11
DIN 45004
(IC = 90 mA, VCC = 15 V)
(IC = 90 mA, VCC = 15 V)
DIN —
Maximum Available Power Gain (3)
(IC = 90 mA, VCE = 15 Vdc, f = 0.5 GHz)
NOTES:
2. Characterized on HP8542 Automatic Network Analyzer
3.
GUmax
=
|S21|2
(1 |S11|2)(1 |S22|2)
GUmax
Typ
5.5
1.7
3.0
13
6.3
11
– 70
125
16.5
Max Unit
— GHz
2.2 pF
dB
4.0
dB
— dB
— dBµV
— dB
10
9
8
7
6
5
4
3
2
1
0
0.1
30
VCE = 15 V
27
IC = 90 mA
24
GNF 21
18
15
N.F.
0.2 0.3
0.5
f, FREQUENCY (GHz)
12
9
6
3
0
0.7 0.9 10
Figure 1. Typical Noise Figure and
Associated Gain versus Frequency
6
VCE = 15 V
5 f = 300 MHz
4
3
2
1
0 50 100 150 200
IC, COLLECTOR CURRENT (mA)
Figure 2. Noise Figure versus Collector Current
MRF587
2
MOTOROLA RF DEVICE DATA

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20
f = 500 MHz
VCE = 15 V
16
6
VCE = 15 V
5
12 4
83
4 2 f = 1000 MHz
0
0 50 100 150 200
IC, COLLECTOR CURRENT (mA)
Figure 3. GUmax versus Collector Current
1
0 50 100 150 200
IC, COLLECTOR CURRENT (mA)
Figure 4. Gain–Bandwidth Product versus
Collector Current
TYPICAL PERFORMANCE
7 10
6
5
4
CIRCUIT PER
FIGURE 16
3
VCC = 15 V
f = 300 MHz
7
5
3
2
Cob
Ccb
2
40 50 60 70 80 90 100 110 120
IC, COLLECTOR CURRENT (mA)
Figure 5. Broadband Noise Figure
1
1
23
5 7 10
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 6. Junction Capacitance versus Voltage
80 31
29
76 27
25
72
68
CIRCUIT PER
FIGURE 16
64
VCC = 15 V
f = 200 MHz
23
21
19
17
15
13
60 11
40 50 60 70 80 90 100 110 120
IC, COLLECTOR CURRENT (mA)
Figure 7. 1.0 dB Compression Point versus
Collector Current
60
50
3RD ORDER
INTERCEPT
40
+1 dB
COMP. PT.
30
20
10
0 10
CIRCUIT PER
FIGURE 16
f1 = 205 MHz
f2 = 211 MHz
VCC = 15 V
IC = 90 mA
20 30 40 50 60
Pin, INPUT POWER (dBm)
70
Figure 8. Third Order Intercept Point
80
MOTOROLA RF DEVICE DATA
MRF587
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TYPICAL PERFORMANCE (continued)
– 48
VCE = 15 V
PRef = 50 dBmV
– 52
CIRCUIT PER
FIGURE 16
– 56 TEST PER FIGURE 17
– 60
CHR
CH13
– 60
– 64
– 68
– 72
VCC = 15 V
PRef = 50 dBmV @ 200 MHz
CIRCUIT PER
FIGURE 16
– 64 – 76
CH2
– 80
40 50 60 70 80 90 100 110 120
70
IC, COLLECTOR CURRENT (mA)
Figure 9. Second Order Distortion versus
Collector Current
TEST PER FIGURE 18
80 90 100 110
IC, COLLECTOR CURRENT (mA)
Figure 10. Triple Beat Distortion versus
Collector Current
120
– 10
– 20
– 30
– 40
CIRCUIT PER
FIGURE 16
TEST PER FIGURE 19
– 50
VCC = 15 V
PRef = 50 dBmV
CH13
140
VCC = 15 V
130
120
110
100
CIRCUIT PER
FIGURE 16
TEST PER FIGURE 20
– 60
40 50 60 70 80 90 100 110 120
IC, COLLECTOR CURRENT (mA)
Figure 11. 35–Channel X–Modulation Distortion
versus Collector Current
90
40 50 60 70 80 90 100 110 120
IC, COLLECTOR CURRENT (mA)
Figure 12. DIN 45004B versus Collector Current
MRF587
4
MOTOROLA RF DEVICE DATA

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+ j50
+ j25
+ j100
VCE = 15 V IC = 90 mA
90°
120° f = 0.1 GHz
60°
+ j150
+ j10 + j250
0
S11
1
10 0.8
0.6
25
50
0.4 0.4
0.2 0.6 0.2
– j10
f = 0.1 GHz
0.8
1
100 150 250 500
f = 0.1 GHz
+ j500
– j500
– j250
S22 – j150
– j25 – j100
– j50
Figure 13. Input/Output Reflection
Coefficient versus Frequency (GHz)
S21
150° 0.2
30°
0.8
180° 25 20 15 10
0.4
0.6
1
5
1
0.6
0.4
f = 0.1 GHz
0.1 0.2 0.3
S12
0.4
0.5
0°
–150°
– 30°
–120°
– 90°
– 60°
Figure 14. Forward/Reverse Transmission
Coefficients versus Frequency (GHz)
VCE
(Volts)
5.0
10
IC
(mA)
30
60
90
30
60
90
f
(MHz)
100
200
400
600
800
1000
100
200
400
600
800
1000
100
200
400
600
800
1000
100
200
400
600
800
1000
100
200
400
600
800
1000
100
200
400
600
800
1000
S11
|S11|
φ
0.56 – 131
0.58 – 159
0.60 – 178
0.64 170
0.67 162
0.70 155
0.53 – 141
0.56 – 164
0.59 178
0.63 169
0.66 161
0.69 155
0.52 – 145
0.56 – 166
0.59 177
0.63 168
0.66 161
0.69 155
0.53 – 122
0.53 – 153
0.55 175
0.59 173
0.62 165
0.65 158
0.49 – 132
0.51 – 158
0.53 – 178
0.58 171
0.60 164
0.63 157
0.48 – 135
0.50 – 160
0.53 – 179
0.57 171
0.60 164
0.63 157
S21
|S21|
16.45
9.42
5.00
3.61
2.92
2.55
φ
113
98
86
76
67
58
17.89
10.05
5.31
3.82
3.09
2.67
110
97
85
76
67
58
18.26
10.20
5.38
3.86
3.12
2.70
109
96
85
76
67
58
18.36
10.63
5.71
4.16
3.37
2.95
115
100
87
78
68
59
20.19
11.54
6.12
4.43
3.58
3.12
112
99
87
78
68
60
20.82
11.77
6.22
4.50
3.64
3.18
111
98
86
78
68
60
S12
|S12|
0.04
0.06
0.08
0.11
0.14
0.17
0.04
0.05
0.09
0.12
0.15
0.18
0.04
0.05
0.09
0.12
0.15
0.19
0.04
0.05
0.08
0.10
0.13
0.15
0.03
0.05
0.08
0.11
0.14
0.16
0.03
0.05
0.08
0.11
0.14
0.17
φ
45
49
55
56
55
54
50
55
60
59
57
55
52
57
62
60
58
55
48
51
57
58
57
55
51
57
61
60
59
57
53
59
63
62
59
57
Table 1. Common–Emitter S–Parameters
S22
|S22|
φ
0.49 – 91
0.38 – 116
0.35 – 132
0.38 – 138
0.41 – 144
0.44 – 152
0.47 – 102
0.39 – 126
0.38 – 141
0.40 – 146
0.44 – 153
0.47 – 160
0.47 – 106
0.39 – 130
0.39 – 144
0.41 – 149
0.45 – 155
0.48 – 162
0.50 – 75
0.36 – 96
0.33 – 112
0.35 – 119
0.39 – 127
0.42 – 136
0.46 – 85
0.35 – 107
0.33 – 123
0.36 – 129
0.40 – 136
0.44 – 144
0.45 – 88
0.34 – 111
0.33 – 126
0.36 – 131
0.41 – 139
0.44 – 147
(continued)
MOTOROLA RF DEVICE DATA
MRF587
5