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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H13003
HIGH VOLTAGE SWITCH MODE APPLICICATIONS
High Speed Switching. Suitable for Switching Regulator and Montor Control
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
-65~150
Tj Junction Temperature
150
PC Collector Dissipation
40W
VCBO Collector-Base Voltage
700V
VCEO Collector-Emitter Voltage
400V
VEBO Emitter-Base Voltage
9V
I CCollector Current
1.5A
IB Base Curren
0.75A
1 Base B
2 Collector C
3 Emitter E
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
BVCEO
IEBO
HFE1
HFE2
VCE(sat)1
VCE(sat)2
VCE(sat)3
VBE(sat)1
VBE(sat)2
fT
tON
Characteristics
Collector-Emitter Breakdown Voltage
Emitter-Base Cut-off Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Collector- Emitter Saturation Voltage
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Turn On Time
Min
400
10
5
4
Typ
tSTG Storage Time
tF Fall Time
hFE Classification
H1 H2
H3
Max Unit
Test Conditions
V IC=5mA, IB=0
10 A VEB=9V, IC=0
40 VCE=5V, IC=0.5A
VCE=2V, IC=1A
0.5 V IC=0.5A, IB=0.1A
1 V IC=1A, IB=0.25A
3 V IC=1.5A, IB=0.5A
1 V IC=0.5A, IB=0.1A
1.2 V IC=1A, IB=0.25A
MHz VCE=10V,IC=0.1A
1.1 s
VCC=125V, IC=1A,
4.0 s IB1=0.2A,IB2=-0.2A
0.7 s RL=125
H4 www.DHa5taSheet4U.com
10-16
www.DataSheet4U.com
14-21
19-26
24-31
29-40

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