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NTF3055-100,
NVF3055-100
Power MOSFET
3.0 Amps, 60 Volts
N−Channel SOT−223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
VDSS
60
Drain−to−Gate Voltage (RGS = 10 MW)
VDGR
60
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tp 10 ms)
VGS ± 20
± 30
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tp 10 ms)
ID 3.0
ID 1.4
IDM 9.0
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Derate above 25°C
PD 2.1
1.3
0.014
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
W
W
W/°C
Operating and Storage Temperature Range
TJ, Tstg − 55
to 175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc)
Thermal Resistance
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
EAS
RqJA
RqJA
TL
74 mJ
°C/W
72.3
114
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1pad size, 1 oz.
(Cu. Area 1.127 sq in).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2−2.4 oz. (Cu. Area 0.272 sq in).
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3.0 A, 60 V
RDS(on) = 110 mW
N−Channel
D
G
S
4
1
2
3
SOT−223
CASE 318E
STYLE 3
MARKING
DIAGRAM
& PIN
ASSIGNMENT
Drain
4
AWW
3055G
G
123
Gate Drain Source
A = Assembly Location
WW = Work Week
3055 = Specific Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping
NTF3055−100T1G SOT−223 1000 / Tape &
(Pb−Free)
Reel
NTF3055−100T3G SOT−223 4000 / Tape &
(Pb−Free)
Reel
NVF3055−100T1G SOT−223 1000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 5
1
Publication Order Number:
NTF3055−100/D

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NTF3055−100, NVF3055−100
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
IDSS
IGSS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 1.5 Adc)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 10 Vdc, ID = 1.5 Adc, TJ = 150°C)
Forward Transconductance (Note 3)
(VDS = 8.0 Vdc, ID = 1.7 Adc)
RDS(on)
VDS(on)
gfs
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 V,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
RG = 9.1 W) (Note 3)
Gate Charge
(VDS = 48 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc) (Note 3)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc,
TJ = 150°C) (Note 3)
Reverse Recovery Time
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
4. Switching characteristics are independent of operating junction temperatures.
VSD
trr
ta
tb
QRR
Min
60
2.0
Typ Max Unit
Vdc
68 −
66 − mV/°C
mAdc
− 1.0
− 10
± 100 nAdc
Vdc
3.0 4.0
6.6 − mV/°C
mW
88 110
Vdc
0.27 0.40
0.24 −
3.2 − Mhos
324 455
35 50
110 155
pF
9.4 20
14 30
21 45
13 30
10.6 22
1.9 −
4.2 −
ns
nC
Vdc
0.89 1.0
0.74 −
30 − ns
22 −
8.6 −
0.04 −
mC
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NTF3055−100, NVF3055−100
6
5 VGS = 10 V
4
VGS = 5 V
3 VGS = 8 V
2
VGS = 4.5 V
1
VGS = 6 V
VGS = 4 V
0
012 3
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
4
6
VDS 10 V
5
4
3
2 TJ = 25°C
1 TJ = 100°C
TJ = −55°C
0
3 3.5 4 4.5 5 5.5 6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.16
VGS = 10 V
0.14
0.12
TJ = 100°C
0.1
0.08
0.06
TJ = 25°C
TJ = −55°C
0.04
0.02
0
0 1 23 4 5
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
0.16
0.14
0.12
VGS = 15 V
TJ = 100°C
0.1
0.08
TJ = 25°C
0.06
TJ = −55°C
0.04
0.02
0
6 0 123 45 6
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.2
ID = 1.5 A
2 VGS = 10 V
1.8
1.6
1.4
1000
VGS = 0 V
TJ = 150°C
100 TJ = 125°C
1.2
1 10 TJ = 100°C
0.8
0.6
−50
−25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
175
1
0 10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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NTF3055−100, NVF3055−100
800 VDS = 0 V
700 Ciss
600
500
Crss
400
300
200
100
VGS = 0 V
Crss
TJ = 25°C
Ciss
Coss
0
10
5 VGS 0 VDS 5 10 15 20 25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
100
VDS = 30 V
ID = 3 A
VGS = 10 V
td(off)
10
tf
tr
td(on)
12
10 QT
8 VGS
6 Q1
4
Q2
2 ID = 3 A
TJ = 25°C
0
0 2 4 6 8 10 12
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
3
VGS = 0 V
TJ = 25°C
2
1
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
100
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
1
1 ms
10 ms
0.1
0.01
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
100 ms
10
dc
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0
0.54 0.58 0.62 0.66 0.7 0.74 0.78 0.82 0.86 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
80
ID = 7 A
70
60
50
40
30
20
10
0
25 50 75 100 125 150 175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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NTF3055−100, NVF3055−100
100
D = 0.5
0.2
10 0.1
0.05
0.02
1
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
Figure 13. Thermal Response
1
10 100 1000
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5